Monolithic integration of perovskites on Ge(001) by atomic layer deposition: A case study with SrHfxTi1-xO3

Shen Hu, Martin D. McDaniel, Agham Posadas, Chengqing Hu, Hsinwei Wu, Edward T. Yu, David Smith, Alexander A. Demkov, John G. Ekerdt

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

This work reports the growth of crystalline SrHf xTi1-xO3 (SHTO) films on Ge (001) substrates by atomic layer deposition. Samples were prepared with different Hf content x to explore if strain, from tensile (x = 0) to compressive (x = 1), affected film crystallization temperature and how composition affected properties. Amorphous films grew at 225 °C and crystallized into epitaxial layers at annealing temperatures that varied monotonically with composition from ~530 °C (x = 0) to ~660 °C (x = 1). Transmission electron microscopy revealed abrupt interfaces. Electrical measurements revealed 0.1 A/cm2 leakage current at 1 MV/cm for x = 0.55.

Original languageEnglish (US)
Pages (from-to)125-132
Number of pages8
JournalMRS Communications
Volume6
Issue number3
DOIs
StatePublished - Sep 1 2016

ASJC Scopus subject areas

  • Materials Science(all)

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    Hu, S., McDaniel, M. D., Posadas, A., Hu, C., Wu, H., Yu, E. T., Smith, D., Demkov, A. A., & Ekerdt, J. G. (2016). Monolithic integration of perovskites on Ge(001) by atomic layer deposition: A case study with SrHfxTi1-xO3. MRS Communications, 6(3), 125-132. https://doi.org/10.1557/mrc.2016.36