Monolithic integration of perovskites on Ge(001) by atomic layer deposition: A case study with SrHfxTi1-xO3

Shen Hu; Martin D. McDaniel; Agham Posadas; Chengqing Hu; Hsinwei Wu; Edward T. Yu; David Smith; Alexander A. Demkov; John G. Ekerdt

doi:10.1557/mrc.2016.36

Monolithic integration of perovskites on Ge(001) by atomic layer deposition: A case study with SrHf_xTi_1-xO₃

Shen Hu, Martin D. McDaniel, Agham Posadas, Chengqing Hu, Hsinwei Wu, Edward T. Yu, David Smith, Alexander A. Demkov, John G. Ekerdt

Research output: Contribution to journal › Article › peer-review

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Abstract

This work reports the growth of crystalline SrHf xTi1-xO3 (SHTO) films on Ge (001) substrates by atomic layer deposition. Samples were prepared with different Hf content x to explore if strain, from tensile (x = 0) to compressive (x = 1), affected film crystallization temperature and how composition affected properties. Amorphous films grew at 225 °C and crystallized into epitaxial layers at annealing temperatures that varied monotonically with composition from ~530 °C (x = 0) to ~660 °C (x = 1). Transmission electron microscopy revealed abrupt interfaces. Electrical measurements revealed 0.1 A/cm² leakage current at 1 MV/cm for x = 0.55.

Original language	English (US)
Pages (from-to)	125-132
Number of pages	8
Journal	MRS Communications
Volume	6
Issue number	3
DOIs	https://doi.org/10.1557/mrc.2016.36
State	Published - Sep 1 2016

ASJC Scopus subject areas

General Materials Science

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title = "Monolithic integration of perovskites on Ge(001) by atomic layer deposition: A case study with SrHfxTi1-xO3",

abstract = "This work reports the growth of crystalline SrHf xTi1-xO3 (SHTO) films on Ge (001) substrates by atomic layer deposition. Samples were prepared with different Hf content x to explore if strain, from tensile (x = 0) to compressive (x = 1), affected film crystallization temperature and how composition affected properties. Amorphous films grew at 225 °C and crystallized into epitaxial layers at annealing temperatures that varied monotonically with composition from ~530 °C (x = 0) to ~660 °C (x = 1). Transmission electron microscopy revealed abrupt interfaces. Electrical measurements revealed 0.1 A/cm2 leakage current at 1 MV/cm for x = 0.55.",

author = "Shen Hu and McDaniel, {Martin D.} and Agham Posadas and Chengqing Hu and Hsinwei Wu and Yu, {Edward T.} and David Smith and Demkov, {Alexander A.} and Ekerdt, {John G.}",

note = "Funding Information: This research was supported by the National Science Foundation (Award CMMI-1437050) and the Air Force Office of Scientific Research (Grant FA9550-14-1-0090). Publisher Copyright: {\textcopyright} Materials Research Society 2016.",

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AU - Hu, Shen

AU - McDaniel, Martin D.

AU - Posadas, Agham

AU - Hu, Chengqing

AU - Wu, Hsinwei

AU - Yu, Edward T.

AU - Smith, David

AU - Demkov, Alexander A.

AU - Ekerdt, John G.

N1 - Funding Information: This research was supported by the National Science Foundation (Award CMMI-1437050) and the Air Force Office of Scientific Research (Grant FA9550-14-1-0090). Publisher Copyright: © Materials Research Society 2016.

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N2 - This work reports the growth of crystalline SrHf xTi1-xO3 (SHTO) films on Ge (001) substrates by atomic layer deposition. Samples were prepared with different Hf content x to explore if strain, from tensile (x = 0) to compressive (x = 1), affected film crystallization temperature and how composition affected properties. Amorphous films grew at 225 °C and crystallized into epitaxial layers at annealing temperatures that varied monotonically with composition from ~530 °C (x = 0) to ~660 °C (x = 1). Transmission electron microscopy revealed abrupt interfaces. Electrical measurements revealed 0.1 A/cm2 leakage current at 1 MV/cm for x = 0.55.

AB - This work reports the growth of crystalline SrHf xTi1-xO3 (SHTO) films on Ge (001) substrates by atomic layer deposition. Samples were prepared with different Hf content x to explore if strain, from tensile (x = 0) to compressive (x = 1), affected film crystallization temperature and how composition affected properties. Amorphous films grew at 225 °C and crystallized into epitaxial layers at annealing temperatures that varied monotonically with composition from ~530 °C (x = 0) to ~660 °C (x = 1). Transmission electron microscopy revealed abrupt interfaces. Electrical measurements revealed 0.1 A/cm2 leakage current at 1 MV/cm for x = 0.55.

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Monolithic integration of perovskites on Ge(001) by atomic layer deposition: A case study with SrHf_xTi_1-xO₃

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