Monolithic integration of a GaAs MESFET with a resonant cavity LED using a buried oxide layer

Chuck Wheeler, Sonu Daryanani, David L. Mathine, George N. Maracas, David Allee

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

A new method to monolithically integrate a GaAs MESFET and a resonant cavity LED is demonstrated. Current confinement in these two dissimilar devices is accomplished using a buried insulating layer formed by the thermal oxidation of AlAs. Fabrication and device performance under dc bias as well as modulation results are briefly described.

Original languageEnglish (US)
Pages (from-to)194-196
Number of pages3
JournalIEEE Photonics Technology Letters
Volume9
Issue number2
DOIs
StatePublished - Feb 1 1997

Keywords

  • Integrated optoelectronics
  • Light-emitting diodes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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