Monolayer passivation of silicon(0 0 1) surface by selenium

M. Tao, E. Maldonado, W. P. Kirk

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Monolayer passivation of the silicon(0 0 1) surface by selenium is investigated in an ultrahigh vacuum environment with a solid selenium source by reflection high-energy electron diffraction and residual gas analysis. It is found that precisely one monolayer of selenium is deposited on silicon(0 0 1) when the silicon substrate temperature is set slightly above the selenium source temperature and the passivation time ensures a little overdose of selenium above one monolayer. The temperature settings prevent selenium condensation on silicon(0 0 1), which makes selenium deposition on silicon(0 0 1) a thermodynamically self-limited process to exactly one monolayer.

Original languageEnglish (US)
Pages (from-to)4578-4580
Number of pages3
JournalApplied Surface Science
Volume253
Issue number10
DOIs
StatePublished - Mar 15 2007
Externally publishedYes

Keywords

  • Monolayer
  • Selenium
  • Silicon(0 0 1) surface
  • Surface passivation

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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