Abstract

Monocrystalline p-ZnTe/p-CdTe/n-CdTe/n-MgCdTe double-heterostructure (DH) solar cells are designed and demonstrated with a maximum efficiency of 10.9 %, an open-circuit voltage (VOC) of 759 mV, a short-circuit current density (JSC) of 21.2 mA/cm2 and a fill factor (FF) of 67.4 %. The low efficiency is mainly due to the combination of the low VOC and FF, which are attributed to high interface recombination at the ZnTe/CdTe, and p-CdTe/n-CdTe interfaces. Activation energies (EA) of 1.54 eV and 1.25 eV are obtained from temperature dependent light-IV measurements, indicating that the dominant recombination mechanism changes from interface recombination for non-annealed devices to bulk recombination for devices annealed at 450 °C.

Original languageEnglish (US)
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479979448
DOIs
StatePublished - Dec 14 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: Jun 14 2015Jun 19 2015

Other

Other42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
CountryUnited States
CityNew Orleans
Period6/14/156/19/15

Fingerprint

Volatile organic compounds
Heterojunctions
Solar cells
Open circuit voltage
Substrates
Short circuit currents
Current density
Activation energy
Temperature

Keywords

  • cadmium telluride
  • heterostructure
  • MBE
  • solar cells

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Kuo, Y. S., Becker, J., Liu, S., Zhao, Y., Zhao, X. H., Su, P. Y., ... Zhang, Y-H. (2015). Monocrystalline ZnTe/CdTe/MgCdTe double heterostructure solar cells grown on InSb substrates. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 [7355652] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7355652

Monocrystalline ZnTe/CdTe/MgCdTe double heterostructure solar cells grown on InSb substrates. / Kuo, Ying Shen; Becker, Jacob; Liu, Shi; Zhao, Yuan; Zhao, Xin Hao; Su, Peng Yu; Bhat, Ishwara; Zhang, Yong-Hang.

2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7355652.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kuo, YS, Becker, J, Liu, S, Zhao, Y, Zhao, XH, Su, PY, Bhat, I & Zhang, Y-H 2015, Monocrystalline ZnTe/CdTe/MgCdTe double heterostructure solar cells grown on InSb substrates. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7355652, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 6/14/15. https://doi.org/10.1109/PVSC.2015.7355652
Kuo YS, Becker J, Liu S, Zhao Y, Zhao XH, Su PY et al. Monocrystalline ZnTe/CdTe/MgCdTe double heterostructure solar cells grown on InSb substrates. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7355652 https://doi.org/10.1109/PVSC.2015.7355652
Kuo, Ying Shen ; Becker, Jacob ; Liu, Shi ; Zhao, Yuan ; Zhao, Xin Hao ; Su, Peng Yu ; Bhat, Ishwara ; Zhang, Yong-Hang. / Monocrystalline ZnTe/CdTe/MgCdTe double heterostructure solar cells grown on InSb substrates. 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015.
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title = "Monocrystalline ZnTe/CdTe/MgCdTe double heterostructure solar cells grown on InSb substrates",
abstract = "Monocrystalline p-ZnTe/p-CdTe/n-CdTe/n-MgCdTe double-heterostructure (DH) solar cells are designed and demonstrated with a maximum efficiency of 10.9 {\%}, an open-circuit voltage (VOC) of 759 mV, a short-circuit current density (JSC) of 21.2 mA/cm2 and a fill factor (FF) of 67.4 {\%}. The low efficiency is mainly due to the combination of the low VOC and FF, which are attributed to high interface recombination at the ZnTe/CdTe, and p-CdTe/n-CdTe interfaces. Activation energies (EA) of 1.54 eV and 1.25 eV are obtained from temperature dependent light-IV measurements, indicating that the dominant recombination mechanism changes from interface recombination for non-annealed devices to bulk recombination for devices annealed at 450 °C.",
keywords = "cadmium telluride, heterostructure, MBE, solar cells",
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AU - Su, Peng Yu

AU - Bhat, Ishwara

AU - Zhang, Yong-Hang

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N2 - Monocrystalline p-ZnTe/p-CdTe/n-CdTe/n-MgCdTe double-heterostructure (DH) solar cells are designed and demonstrated with a maximum efficiency of 10.9 %, an open-circuit voltage (VOC) of 759 mV, a short-circuit current density (JSC) of 21.2 mA/cm2 and a fill factor (FF) of 67.4 %. The low efficiency is mainly due to the combination of the low VOC and FF, which are attributed to high interface recombination at the ZnTe/CdTe, and p-CdTe/n-CdTe interfaces. Activation energies (EA) of 1.54 eV and 1.25 eV are obtained from temperature dependent light-IV measurements, indicating that the dominant recombination mechanism changes from interface recombination for non-annealed devices to bulk recombination for devices annealed at 450 °C.

AB - Monocrystalline p-ZnTe/p-CdTe/n-CdTe/n-MgCdTe double-heterostructure (DH) solar cells are designed and demonstrated with a maximum efficiency of 10.9 %, an open-circuit voltage (VOC) of 759 mV, a short-circuit current density (JSC) of 21.2 mA/cm2 and a fill factor (FF) of 67.4 %. The low efficiency is mainly due to the combination of the low VOC and FF, which are attributed to high interface recombination at the ZnTe/CdTe, and p-CdTe/n-CdTe interfaces. Activation energies (EA) of 1.54 eV and 1.25 eV are obtained from temperature dependent light-IV measurements, indicating that the dominant recombination mechanism changes from interface recombination for non-annealed devices to bulk recombination for devices annealed at 450 °C.

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