Monocrystalline CdTe/MgCdTe double-heterostructure solar cells with a ZnTe hole-contact and passivation layer

Jacob J. Becker; Calli M. Campbell; Yuan Zhao; Mathieu Boccard; Dibyajvoti Mohanty; Ernesto Suarez; Maxwell Lassise; Ishwara Bhat; Yong-Hang Zhang

doi:10.1109/PVSC.2016.7749850

Monocrystalline CdTe/MgCdTe double-heterostructure solar cells with a ZnTe hole-contact and passivation layer

Jacob J. Becker, Calli M. Campbell, Yuan Zhao, Mathieu Boccard, Dibyajvoti Mohanty, Ernesto Suarez, Maxwell Lassise, Ishwara Bhat, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

Monocrystalline p-ZnTe/i-MgCdTe/n-CdTe/n-MgCdTe double-heterostructure (DH) solar cells are grown through a combination of MBE and MOCVD deposition techniques using several different dopants. The adverse effects (high interface recombination velocity) of the lattice mismatched ZnTe/CdTe hetero-interface is suppressed by the use of a DH with an intrinsic MgCdTe top barrier layer that functions as a passivation layer. The steady-state photoluminescence intensity is used to compare the potential device performance with previous ZnTe/CdTe and a-Si/i-MgCdTe/CdTe device structures while quantum efficiency measurements demonstrate the benefit of using ZnTe over previously demonstrated contact layers.

Original language	English (US)
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1421-1424
Number of pages	4
Volume	2016-November
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7749850
State	Published - Nov 18 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: Jun 5 2016 → Jun 10 2016

Other

Other	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	6/5/16 → 6/10/16

Keywords

CdTe
double-heterostructure
monocrystalline
photovoltaics (PV)
ZnTe

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2016.7749850

Cite this

Becker, J. J., Campbell, C. M., Zhao, Y., Boccard, M., Mohanty, D., Suarez, E., Lassise, M., Bhat, I., & Zhang, Y-H. (2016). Monocrystalline CdTe/MgCdTe double-heterostructure solar cells with a ZnTe hole-contact and passivation layer. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, pp. 1421-1424). [7749850] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749850

Monocrystalline CdTe/MgCdTe double-heterostructure solar cells with a ZnTe hole-contact and passivation layer. / Becker, Jacob J.; Campbell, Calli M.; Zhao, Yuan; Boccard, Mathieu; Mohanty, Dibyajvoti; Suarez, Ernesto; Lassise, Maxwell; Bhat, Ishwara; Zhang, Yong-Hang.

2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. p. 1421-1424 7749850.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Becker, JJ, Campbell, CM, Zhao, Y, Boccard, M, Mohanty, D, Suarez, E, Lassise, M, Bhat, I & Zhang, Y-H 2016, Monocrystalline CdTe/MgCdTe double-heterostructure solar cells with a ZnTe hole-contact and passivation layer. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. vol. 2016-November, 7749850, Institute of Electrical and Electronics Engineers Inc., pp. 1421-1424, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 6/5/16. https://doi.org/10.1109/PVSC.2016.7749850

Becker JJ, Campbell CM, Zhao Y, Boccard M, Mohanty D, Suarez E et al. Monocrystalline CdTe/MgCdTe double-heterostructure solar cells with a ZnTe hole-contact and passivation layer. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November. Institute of Electrical and Electronics Engineers Inc. 2016. p. 1421-1424. 7749850 https://doi.org/10.1109/PVSC.2016.7749850

Becker, Jacob J. ; Campbell, Calli M. ; Zhao, Yuan ; Boccard, Mathieu ; Mohanty, Dibyajvoti ; Suarez, Ernesto ; Lassise, Maxwell ; Bhat, Ishwara ; Zhang, Yong-Hang. / Monocrystalline CdTe/MgCdTe double-heterostructure solar cells with a ZnTe hole-contact and passivation layer. 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. pp. 1421-1424

@inproceedings{992d9ed3e178483c85c12fc9f975099b,

title = "Monocrystalline CdTe/MgCdTe double-heterostructure solar cells with a ZnTe hole-contact and passivation layer",

abstract = "Monocrystalline p-ZnTe/i-MgCdTe/n-CdTe/n-MgCdTe double-heterostructure (DH) solar cells are grown through a combination of MBE and MOCVD deposition techniques using several different dopants. The adverse effects (high interface recombination velocity) of the lattice mismatched ZnTe/CdTe hetero-interface is suppressed by the use of a DH with an intrinsic MgCdTe top barrier layer that functions as a passivation layer. The steady-state photoluminescence intensity is used to compare the potential device performance with previous ZnTe/CdTe and a-Si/i-MgCdTe/CdTe device structures while quantum efficiency measurements demonstrate the benefit of using ZnTe over previously demonstrated contact layers.",

keywords = "CdTe, double-heterostructure, monocrystalline, photovoltaics (PV), ZnTe",

author = "Becker, {Jacob J.} and Campbell, {Calli M.} and Yuan Zhao and Mathieu Boccard and Dibyajvoti Mohanty and Ernesto Suarez and Maxwell Lassise and Ishwara Bhat and Yong-Hang Zhang",

year = "2016",

month = nov,

day = "18",

doi = "10.1109/PVSC.2016.7749850",

language = "English (US)",

volume = "2016-November",

pages = "1421--1424",

booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

}

TY - GEN

T1 - Monocrystalline CdTe/MgCdTe double-heterostructure solar cells with a ZnTe hole-contact and passivation layer

AU - Becker, Jacob J.

AU - Campbell, Calli M.

AU - Zhao, Yuan

AU - Boccard, Mathieu

AU - Mohanty, Dibyajvoti

AU - Suarez, Ernesto

AU - Lassise, Maxwell

AU - Bhat, Ishwara

AU - Zhang, Yong-Hang

PY - 2016/11/18

Y1 - 2016/11/18

N2 - Monocrystalline p-ZnTe/i-MgCdTe/n-CdTe/n-MgCdTe double-heterostructure (DH) solar cells are grown through a combination of MBE and MOCVD deposition techniques using several different dopants. The adverse effects (high interface recombination velocity) of the lattice mismatched ZnTe/CdTe hetero-interface is suppressed by the use of a DH with an intrinsic MgCdTe top barrier layer that functions as a passivation layer. The steady-state photoluminescence intensity is used to compare the potential device performance with previous ZnTe/CdTe and a-Si/i-MgCdTe/CdTe device structures while quantum efficiency measurements demonstrate the benefit of using ZnTe over previously demonstrated contact layers.

AB - Monocrystalline p-ZnTe/i-MgCdTe/n-CdTe/n-MgCdTe double-heterostructure (DH) solar cells are grown through a combination of MBE and MOCVD deposition techniques using several different dopants. The adverse effects (high interface recombination velocity) of the lattice mismatched ZnTe/CdTe hetero-interface is suppressed by the use of a DH with an intrinsic MgCdTe top barrier layer that functions as a passivation layer. The steady-state photoluminescence intensity is used to compare the potential device performance with previous ZnTe/CdTe and a-Si/i-MgCdTe/CdTe device structures while quantum efficiency measurements demonstrate the benefit of using ZnTe over previously demonstrated contact layers.

KW - CdTe

KW - double-heterostructure

KW - monocrystalline

KW - photovoltaics (PV)

KW - ZnTe

UR - http://www.scopus.com/inward/record.url?scp=85003749654&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85003749654&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2016.7749850

DO - 10.1109/PVSC.2016.7749850

M3 - Conference contribution

AN - SCOPUS:85003749654

VL - 2016-November

SP - 1421

EP - 1424

BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016

Y2 - 5 June 2016 through 10 June 2016

ER -

Monocrystalline CdTe/MgCdTe double-heterostructure solar cells with a ZnTe hole-contact and passivation layer

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Keywords

ASJC Scopus subject areas

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