Abstract
Monocrystalline p-ZnTe/i-MgCdTe/n-CdTe/n-MgCdTe double-heterostructure (DH) solar cells are grown through a combination of MBE and MOCVD deposition techniques using several different dopants. The adverse effects (high interface recombination velocity) of the lattice mismatched ZnTe/CdTe hetero-interface is suppressed by the use of a DH with an intrinsic MgCdTe top barrier layer that functions as a passivation layer. The steady-state photoluminescence intensity is used to compare the potential device performance with previous ZnTe/CdTe and a-Si/i-MgCdTe/CdTe device structures while quantum efficiency measurements demonstrate the benefit of using ZnTe over previously demonstrated contact layers.
Original language | English (US) |
---|---|
Title of host publication | 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 1421-1424 |
Number of pages | 4 |
Volume | 2016-November |
ISBN (Electronic) | 9781509027248 |
DOIs | |
State | Published - Nov 18 2016 |
Event | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: Jun 5 2016 → Jun 10 2016 |
Other
Other | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 |
---|---|
Country/Territory | United States |
City | Portland |
Period | 6/5/16 → 6/10/16 |
Keywords
- CdTe
- double-heterostructure
- monocrystalline
- photovoltaics (PV)
- ZnTe
ASJC Scopus subject areas
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering