Abstract
Monocrystalline p-ZnTe/i-MgCdTe/n-CdTe/n-MgCdTe double-heterostructure (DH) solar cells are grown through a combination of MBE and MOCVD deposition techniques using several different dopants. The adverse effects (high interface recombination velocity) of the lattice mismatched ZnTe/CdTe hetero-interface is suppressed by the use of a DH with an intrinsic MgCdTe top barrier layer that functions as a passivation layer. The steady-state photoluminescence intensity is used to compare the potential device performance with previous ZnTe/CdTe and a-Si/i-MgCdTe/CdTe device structures while quantum efficiency measurements demonstrate the benefit of using ZnTe over previously demonstrated contact layers.
| Original language | English (US) |
|---|---|
| Title of host publication | 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 1421-1424 |
| Number of pages | 4 |
| Volume | 2016-November |
| ISBN (Electronic) | 9781509027248 |
| DOIs | |
| State | Published - Nov 18 2016 |
| Event | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: Jun 5 2016 → Jun 10 2016 |
Other
| Other | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 |
|---|---|
| Country | United States |
| City | Portland |
| Period | 6/5/16 → 6/10/16 |
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Keywords
- CdTe
- double-heterostructure
- monocrystalline
- photovoltaics (PV)
- ZnTe
ASJC Scopus subject areas
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering
Cite this
Monocrystalline CdTe/MgCdTe double-heterostructure solar cells with a ZnTe hole-contact and passivation layer. / Becker, Jacob J.; Campbell, Calli M.; Zhao, Yuan; Boccard, Mathieu; Mohanty, Dibyajvoti; Suarez, Ernesto; Lassise, Maxwell; Bhat, Ishwara; Zhang, Yong-Hang.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. p. 1421-1424 7749850.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Monocrystalline CdTe/MgCdTe double-heterostructure solar cells with a ZnTe hole-contact and passivation layer
AU - Becker, Jacob J.
AU - Campbell, Calli M.
AU - Zhao, Yuan
AU - Boccard, Mathieu
AU - Mohanty, Dibyajvoti
AU - Suarez, Ernesto
AU - Lassise, Maxwell
AU - Bhat, Ishwara
AU - Zhang, Yong-Hang
PY - 2016/11/18
Y1 - 2016/11/18
N2 - Monocrystalline p-ZnTe/i-MgCdTe/n-CdTe/n-MgCdTe double-heterostructure (DH) solar cells are grown through a combination of MBE and MOCVD deposition techniques using several different dopants. The adverse effects (high interface recombination velocity) of the lattice mismatched ZnTe/CdTe hetero-interface is suppressed by the use of a DH with an intrinsic MgCdTe top barrier layer that functions as a passivation layer. The steady-state photoluminescence intensity is used to compare the potential device performance with previous ZnTe/CdTe and a-Si/i-MgCdTe/CdTe device structures while quantum efficiency measurements demonstrate the benefit of using ZnTe over previously demonstrated contact layers.
AB - Monocrystalline p-ZnTe/i-MgCdTe/n-CdTe/n-MgCdTe double-heterostructure (DH) solar cells are grown through a combination of MBE and MOCVD deposition techniques using several different dopants. The adverse effects (high interface recombination velocity) of the lattice mismatched ZnTe/CdTe hetero-interface is suppressed by the use of a DH with an intrinsic MgCdTe top barrier layer that functions as a passivation layer. The steady-state photoluminescence intensity is used to compare the potential device performance with previous ZnTe/CdTe and a-Si/i-MgCdTe/CdTe device structures while quantum efficiency measurements demonstrate the benefit of using ZnTe over previously demonstrated contact layers.
KW - CdTe
KW - double-heterostructure
KW - monocrystalline
KW - photovoltaics (PV)
KW - ZnTe
UR - http://www.scopus.com/inward/record.url?scp=85003749654&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85003749654&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2016.7749850
DO - 10.1109/PVSC.2016.7749850
M3 - Conference contribution
AN - SCOPUS:85003749654
VL - 2016-November
SP - 1421
EP - 1424
BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
ER -