Monitoring oxygen movement by raman spectroscopy of resistive random access memory with a graphene-inserted electrode

He Tian; Hong Yu Chen; Bin Gao; Shimeng Yu; Jiale Liang; Yi Yang; Dan Xie; Jinfeng Kang; Tian Ling Ren; Yuegang Zhang; H. S.Philip Wong

doi:10.1021/nl304246d

Monitoring oxygen movement by raman spectroscopy of resistive random access memory with a graphene-inserted electrode

He Tian, Hong Yu Chen, Bin Gao, Shimeng Yu, Jiale Liang, Yi Yang, Dan Xie, Jinfeng Kang, Tian Ling Ren, Yuegang Zhang, H. S.Philip Wong

Research output: Contribution to journal › Article › peer-review

119 Scopus citations

Abstract

In this paper, we employed Ramen spectroscopy to monitor oxygen movement at the electrode/oxide interface by inserting single-layer graphene (SLG). Raman area mapping and single-point measurements show noticeable changes in the D-band, G-band, and 2D-band signals of the SLG during consecutive electrical programming repeated for nine cycles. In addition, the inserted SLG enables the reduction of RESET current by 22 times and programming power consumption by 47 times. Collectively, our results show that monitoring the oxygen movement by Raman spectroscopy for a resistive random access memory (RRAM) is made possible by inserting a single-layer graphene at electrode/oxide interface. This may open up an important analysis tool for investigation of switching mechanism of RRAM.

Original language	English (US)
Pages (from-to)	651-657
Number of pages	7
Journal	Nano Letters
Volume	13
Issue number	2
DOIs	https://doi.org/10.1021/nl304246d
State	Published - Feb 13 2013
Externally published	Yes

Keywords

Graphene
Raman spectroscopy
filaments
oxygen ions movement
resistive random access memory

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

Access to Document

10.1021/nl304246d

Cite this

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title = "Monitoring oxygen movement by raman spectroscopy of resistive random access memory with a graphene-inserted electrode",

abstract = "In this paper, we employed Ramen spectroscopy to monitor oxygen movement at the electrode/oxide interface by inserting single-layer graphene (SLG). Raman area mapping and single-point measurements show noticeable changes in the D-band, G-band, and 2D-band signals of the SLG during consecutive electrical programming repeated for nine cycles. In addition, the inserted SLG enables the reduction of RESET current by 22 times and programming power consumption by 47 times. Collectively, our results show that monitoring the oxygen movement by Raman spectroscopy for a resistive random access memory (RRAM) is made possible by inserting a single-layer graphene at electrode/oxide interface. This may open up an important analysis tool for investigation of switching mechanism of RRAM.",

keywords = "Graphene, Raman spectroscopy, filaments, oxygen ions movement, resistive random access memory",

author = "He Tian and Chen, {Hong Yu} and Bin Gao and Shimeng Yu and Jiale Liang and Yi Yang and Dan Xie and Jinfeng Kang and Ren, {Tian Ling} and Yuegang Zhang and Wong, {H. S.Philip}",

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doi = "10.1021/nl304246d",

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T1 - Monitoring oxygen movement by raman spectroscopy of resistive random access memory with a graphene-inserted electrode

AU - Tian, He

AU - Chen, Hong Yu

AU - Gao, Bin

AU - Yu, Shimeng

AU - Liang, Jiale

AU - Yang, Yi

AU - Xie, Dan

AU - Kang, Jinfeng

AU - Ren, Tian Ling

AU - Zhang, Yuegang

AU - Wong, H. S.Philip

PY - 2013/2/13

Y1 - 2013/2/13

N2 - In this paper, we employed Ramen spectroscopy to monitor oxygen movement at the electrode/oxide interface by inserting single-layer graphene (SLG). Raman area mapping and single-point measurements show noticeable changes in the D-band, G-band, and 2D-band signals of the SLG during consecutive electrical programming repeated for nine cycles. In addition, the inserted SLG enables the reduction of RESET current by 22 times and programming power consumption by 47 times. Collectively, our results show that monitoring the oxygen movement by Raman spectroscopy for a resistive random access memory (RRAM) is made possible by inserting a single-layer graphene at electrode/oxide interface. This may open up an important analysis tool for investigation of switching mechanism of RRAM.

AB - In this paper, we employed Ramen spectroscopy to monitor oxygen movement at the electrode/oxide interface by inserting single-layer graphene (SLG). Raman area mapping and single-point measurements show noticeable changes in the D-band, G-band, and 2D-band signals of the SLG during consecutive electrical programming repeated for nine cycles. In addition, the inserted SLG enables the reduction of RESET current by 22 times and programming power consumption by 47 times. Collectively, our results show that monitoring the oxygen movement by Raman spectroscopy for a resistive random access memory (RRAM) is made possible by inserting a single-layer graphene at electrode/oxide interface. This may open up an important analysis tool for investigation of switching mechanism of RRAM.

KW - Graphene

KW - Raman spectroscopy

KW - filaments

KW - oxygen ions movement

KW - resistive random access memory

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Monitoring oxygen movement by raman spectroscopy of resistive random access memory with a graphene-inserted electrode

Abstract

Keywords

ASJC Scopus subject areas

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