Monitoring oxygen movement by raman spectroscopy of resistive random access memory with a graphene-inserted electrode

He Tian, Hong Yu Chen, Bin Gao, Shimeng Yu, Jiale Liang, Yi Yang, Dan Xie, Jinfeng Kang, Tian Ling Ren, Yuegang Zhang, H. S Philip Wong

Research output: Contribution to journalArticle

86 Scopus citations

Abstract

In this paper, we employed Ramen spectroscopy to monitor oxygen movement at the electrode/oxide interface by inserting single-layer graphene (SLG). Raman area mapping and single-point measurements show noticeable changes in the D-band, G-band, and 2D-band signals of the SLG during consecutive electrical programming repeated for nine cycles. In addition, the inserted SLG enables the reduction of RESET current by 22 times and programming power consumption by 47 times. Collectively, our results show that monitoring the oxygen movement by Raman spectroscopy for a resistive random access memory (RRAM) is made possible by inserting a single-layer graphene at electrode/oxide interface. This may open up an important analysis tool for investigation of switching mechanism of RRAM.

Original languageEnglish (US)
Pages (from-to)651-657
Number of pages7
JournalNano Letters
Volume13
Issue number2
DOIs
Publication statusPublished - Feb 13 2013
Externally publishedYes

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Keywords

  • filaments
  • Graphene
  • oxygen ions movement
  • Raman spectroscopy
  • resistive random access memory

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

Cite this

Tian, H., Chen, H. Y., Gao, B., Yu, S., Liang, J., Yang, Y., ... Wong, H. S. P. (2013). Monitoring oxygen movement by raman spectroscopy of resistive random access memory with a graphene-inserted electrode. Nano Letters, 13(2), 651-657. https://doi.org/10.1021/nl304246d