Abstract

The effect of the structure of the emitter barrier on the performance of GaN hot electron transistors (HETs) is investigated through the description of the hot electrons dynamics in the base region obtained with full-band Monte Carlo simulations. From the momentum distribution of the hot electrons in the base, it is found that the injection of carriers in the satellite valleys is limiting the current gain. A new layout with shorter emitter barrier layer reduces the number of electrons in the satellite valleys and shows an increase of the current gain by a factor of 3. The velocity and energy electron distribution are also calculated for the two devices to show the impact of the satellite valley population on the dynamics of the hot electrons. Several designs of the emitter barrier are proposed based on different AlGaN alloys, yielding cutoff frequencies up to 270 GHz. The design of the collector barrier is found to be related to the power performances highlighting a tradeoff between the maximum output power and the device efficiency. The present analysis provides insight on the operation of these new devices and guidelines to improve the dc and ac small- and large-signal performances of GaN HETs.

Original languageEnglish (US)
JournalIEEE Transactions on Electron Devices
DOIs
StateAccepted/In press - Oct 6 2017

Fingerprint

Aerospace engineering
Hot electrons
Momentum
Transistors
Satellites
Electrons
Cutoff frequency
Monte Carlo simulation

Keywords

  • Current gain
  • Cutoff frequency
  • cutoff frequency
  • Gallium nitride
  • GaN transistor
  • harmonic balance (HB)
  • high frequency
  • hot electron transistor (HET)
  • Layout
  • Metals
  • momentum space
  • Monte Carlo
  • numerical simulation
  • Performance evaluation
  • RF power
  • Scattering
  • Schottky barriers
  • terahertz
  • vertical devices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Momentum Space Engineering of GaN HETs for RF Applications Through Full-Band Monte Carlo Simulations. / Soligo, Riccardo; Sabatti, Flavio; Chowdhury, Srabanti; Saraniti, Marco.

In: IEEE Transactions on Electron Devices, 06.10.2017.

Research output: Contribution to journalArticle

@article{4cc5de08c75e411aaeea3b39c23a2749,
title = "Momentum Space Engineering of GaN HETs for RF Applications Through Full-Band Monte Carlo Simulations",
abstract = "The effect of the structure of the emitter barrier on the performance of GaN hot electron transistors (HETs) is investigated through the description of the hot electrons dynamics in the base region obtained with full-band Monte Carlo simulations. From the momentum distribution of the hot electrons in the base, it is found that the injection of carriers in the satellite valleys is limiting the current gain. A new layout with shorter emitter barrier layer reduces the number of electrons in the satellite valleys and shows an increase of the current gain by a factor of 3. The velocity and energy electron distribution are also calculated for the two devices to show the impact of the satellite valley population on the dynamics of the hot electrons. Several designs of the emitter barrier are proposed based on different AlGaN alloys, yielding cutoff frequencies up to 270 GHz. The design of the collector barrier is found to be related to the power performances highlighting a tradeoff between the maximum output power and the device efficiency. The present analysis provides insight on the operation of these new devices and guidelines to improve the dc and ac small- and large-signal performances of GaN HETs.",
keywords = "Current gain, Cutoff frequency, cutoff frequency, Gallium nitride, GaN transistor, harmonic balance (HB), high frequency, hot electron transistor (HET), Layout, Metals, momentum space, Monte Carlo, numerical simulation, Performance evaluation, RF power, Scattering, Schottky barriers, terahertz, vertical devices",
author = "Riccardo Soligo and Flavio Sabatti and Srabanti Chowdhury and Marco Saraniti",
year = "2017",
month = "10",
day = "6",
doi = "10.1109/TED.2017.2756085",
language = "English (US)",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Momentum Space Engineering of GaN HETs for RF Applications Through Full-Band Monte Carlo Simulations

AU - Soligo, Riccardo

AU - Sabatti, Flavio

AU - Chowdhury, Srabanti

AU - Saraniti, Marco

PY - 2017/10/6

Y1 - 2017/10/6

N2 - The effect of the structure of the emitter barrier on the performance of GaN hot electron transistors (HETs) is investigated through the description of the hot electrons dynamics in the base region obtained with full-band Monte Carlo simulations. From the momentum distribution of the hot electrons in the base, it is found that the injection of carriers in the satellite valleys is limiting the current gain. A new layout with shorter emitter barrier layer reduces the number of electrons in the satellite valleys and shows an increase of the current gain by a factor of 3. The velocity and energy electron distribution are also calculated for the two devices to show the impact of the satellite valley population on the dynamics of the hot electrons. Several designs of the emitter barrier are proposed based on different AlGaN alloys, yielding cutoff frequencies up to 270 GHz. The design of the collector barrier is found to be related to the power performances highlighting a tradeoff between the maximum output power and the device efficiency. The present analysis provides insight on the operation of these new devices and guidelines to improve the dc and ac small- and large-signal performances of GaN HETs.

AB - The effect of the structure of the emitter barrier on the performance of GaN hot electron transistors (HETs) is investigated through the description of the hot electrons dynamics in the base region obtained with full-band Monte Carlo simulations. From the momentum distribution of the hot electrons in the base, it is found that the injection of carriers in the satellite valleys is limiting the current gain. A new layout with shorter emitter barrier layer reduces the number of electrons in the satellite valleys and shows an increase of the current gain by a factor of 3. The velocity and energy electron distribution are also calculated for the two devices to show the impact of the satellite valley population on the dynamics of the hot electrons. Several designs of the emitter barrier are proposed based on different AlGaN alloys, yielding cutoff frequencies up to 270 GHz. The design of the collector barrier is found to be related to the power performances highlighting a tradeoff between the maximum output power and the device efficiency. The present analysis provides insight on the operation of these new devices and guidelines to improve the dc and ac small- and large-signal performances of GaN HETs.

KW - Current gain

KW - Cutoff frequency

KW - cutoff frequency

KW - Gallium nitride

KW - GaN transistor

KW - harmonic balance (HB)

KW - high frequency

KW - hot electron transistor (HET)

KW - Layout

KW - Metals

KW - momentum space

KW - Monte Carlo

KW - numerical simulation

KW - Performance evaluation

KW - RF power

KW - Scattering

KW - Schottky barriers

KW - terahertz

KW - vertical devices

UR - http://www.scopus.com/inward/record.url?scp=85031786227&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85031786227&partnerID=8YFLogxK

U2 - 10.1109/TED.2017.2756085

DO - 10.1109/TED.2017.2756085

M3 - Article

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

ER -