Abstract
The relaxation of momentum conservation in the one-component electron plasma recombination has been investigated in GaInAs modulation doped quantum wells where holes are spatially localized at acceptor sites purposely introduced in the wells. The saturation of the localization centers by high-intensity optical excitation results in the recovery of the usual k-conserving recombination process. A theoretical model taking into account the competition of k-conserving and k-nonconserving processes is proposed to obtain the relevant energetic parameters of the carrier plasma. Finally, the transition from an electron to an electron-hole plasma is evidenced through the analysis of the band filling luminescence spectra.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 457-460 |
| Number of pages | 4 |
| Journal | Surface Science |
| Volume | 267 |
| Issue number | 1-3 |
| DOIs | |
| State | Published - 1992 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Physical and Theoretical Chemistry
Cite this
Momentum conservation of the electron-hole recombination near the one-component to two-component carrier plasma transition. / Cingolani, R.; Zhang, Yong-Hang; Rinaldi, R.; Ferrara, M.; Ploog, K.
In: Surface Science, Vol. 267, No. 1-3, 1992, p. 457-460.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Momentum conservation of the electron-hole recombination near the one-component to two-component carrier plasma transition
AU - Cingolani, R.
AU - Zhang, Yong-Hang
AU - Rinaldi, R.
AU - Ferrara, M.
AU - Ploog, K.
PY - 1992
Y1 - 1992
N2 - The relaxation of momentum conservation in the one-component electron plasma recombination has been investigated in GaInAs modulation doped quantum wells where holes are spatially localized at acceptor sites purposely introduced in the wells. The saturation of the localization centers by high-intensity optical excitation results in the recovery of the usual k-conserving recombination process. A theoretical model taking into account the competition of k-conserving and k-nonconserving processes is proposed to obtain the relevant energetic parameters of the carrier plasma. Finally, the transition from an electron to an electron-hole plasma is evidenced through the analysis of the band filling luminescence spectra.
AB - The relaxation of momentum conservation in the one-component electron plasma recombination has been investigated in GaInAs modulation doped quantum wells where holes are spatially localized at acceptor sites purposely introduced in the wells. The saturation of the localization centers by high-intensity optical excitation results in the recovery of the usual k-conserving recombination process. A theoretical model taking into account the competition of k-conserving and k-nonconserving processes is proposed to obtain the relevant energetic parameters of the carrier plasma. Finally, the transition from an electron to an electron-hole plasma is evidenced through the analysis of the band filling luminescence spectra.
UR - http://www.scopus.com/inward/record.url?scp=0026850801&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0026850801&partnerID=8YFLogxK
U2 - 10.1016/0039-6028(92)91176-C
DO - 10.1016/0039-6028(92)91176-C
M3 - Article
AN - SCOPUS:0026850801
VL - 267
SP - 457
EP - 460
JO - Surface Science
JF - Surface Science
SN - 0039-6028
IS - 1-3
ER -