Momentum conservation of the electron-hole recombination near the one-component to two-component carrier plasma transition

R. Cingolani, Yong-Hang Zhang, R. Rinaldi, M. Ferrara, K. Ploog

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The relaxation of momentum conservation in the one-component electron plasma recombination has been investigated in GaInAs modulation doped quantum wells where holes are spatially localized at acceptor sites purposely introduced in the wells. The saturation of the localization centers by high-intensity optical excitation results in the recovery of the usual k-conserving recombination process. A theoretical model taking into account the competition of k-conserving and k-nonconserving processes is proposed to obtain the relevant energetic parameters of the carrier plasma. Finally, the transition from an electron to an electron-hole plasma is evidenced through the analysis of the band filling luminescence spectra.

Original languageEnglish (US)
Pages (from-to)457-460
Number of pages4
JournalSurface Science
Volume267
Issue number1-3
DOIs
StatePublished - 1992
Externally publishedYes

Fingerprint

conservation
Conservation
Momentum
momentum
Plasmas
Electrons
electron plasma
Photoexcitation
recovery
quantum wells
luminescence
Electron transitions
saturation
modulation
Semiconductor quantum wells
Luminescence
Modulation
excitation
Recovery
electrons

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Physical and Theoretical Chemistry

Cite this

Momentum conservation of the electron-hole recombination near the one-component to two-component carrier plasma transition. / Cingolani, R.; Zhang, Yong-Hang; Rinaldi, R.; Ferrara, M.; Ploog, K.

In: Surface Science, Vol. 267, No. 1-3, 1992, p. 457-460.

Research output: Contribution to journalArticle

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AU - Ploog, K.

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