The k-conserving selection rule in the electron-hole recombination is investigated by intensity-dependent photoluminescence measurements in n-type modulation-doped Ga x In1-x As-Al y In1-y As single quantum wells intentionally doped with Be acceptors in the well centre. The k-non-conserving recombination process involves electrons with momentum up to the Fermi edge and holes localized on the Be acceptors. The transition from a one-component electron plasma to a two-component electron-hole plasma is studied by comparing the experimental results with theoretical line shape models. The density-dependent band gap renormalization is determined for the one-component and the two-component electron-hole plasma. The obtained results are found to agree well with recent theoretical calculations.
- Optical properties of thin films surfaces, and thin layer structures (including superlattices, heterostructures, and intercalation compounds)
- Other luminescence and radiative recombination
ASJC Scopus subject areas
- Physics and Astronomy(all)