Momentum conservation in the luminescence of modulation-doped Ga x In1-x As-Al y In1-y As quantum wells

R. Rinaldi, R. Cingolani, M. Ferrara, Yong-Hang Zhang, K. Ploog

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The k-conserving selection rule in the electron-hole recombination is investigated by intensity-dependent photoluminescence measurements in n-type modulation-doped Ga x In1-x As-Al y In1-y As single quantum wells intentionally doped with Be acceptors in the well centre. The k-non-conserving recombination process involves electrons with momentum up to the Fermi edge and holes localized on the Be acceptors. The transition from a one-component electron plasma to a two-component electron-hole plasma is studied by comparing the experimental results with theoretical line shape models. The density-dependent band gap renormalization is determined for the one-component and the two-component electron-hole plasma. The obtained results are found to agree well with recent theoretical calculations.

Original languageEnglish (US)
Pages (from-to)675-687
Number of pages13
JournalIl Nuovo Cimento D
Volume15
Issue number4
DOIs
StatePublished - Apr 1993
Externally publishedYes

Fingerprint

Semiconductor quantum wells
Luminescence
conservation
Conservation
Momentum
Modulation
quantum wells
luminescence
momentum
modulation
Electrons
Plasmas
electron plasma
line shape
Electron transitions
Photoluminescence
photoluminescence
Energy gap
electrons

Keywords

  • Optical properties of thin films surfaces, and thin layer structures (including superlattices, heterostructures, and intercalation compounds)
  • Other luminescence and radiative recombination

ASJC Scopus subject areas

  • Ocean Engineering
  • Mechanical Engineering
  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Engineering (miscellaneous)
  • Nuclear Energy and Engineering
  • Computer Science Applications
  • Chemical Engineering(all)

Cite this

Momentum conservation in the luminescence of modulation-doped Ga x In1-x As-Al y In1-y As quantum wells. / Rinaldi, R.; Cingolani, R.; Ferrara, M.; Zhang, Yong-Hang; Ploog, K.

In: Il Nuovo Cimento D, Vol. 15, No. 4, 04.1993, p. 675-687.

Research output: Contribution to journalArticle

Rinaldi, R. ; Cingolani, R. ; Ferrara, M. ; Zhang, Yong-Hang ; Ploog, K. / Momentum conservation in the luminescence of modulation-doped Ga x In1-x As-Al y In1-y As quantum wells. In: Il Nuovo Cimento D. 1993 ; Vol. 15, No. 4. pp. 675-687.
@article{cd2b61480b284a19ac8023daf1e28bcc,
title = "Momentum conservation in the luminescence of modulation-doped Ga x In1-x As-Al y In1-y As quantum wells",
abstract = "The k-conserving selection rule in the electron-hole recombination is investigated by intensity-dependent photoluminescence measurements in n-type modulation-doped Ga x In1-x As-Al y In1-y As single quantum wells intentionally doped with Be acceptors in the well centre. The k-non-conserving recombination process involves electrons with momentum up to the Fermi edge and holes localized on the Be acceptors. The transition from a one-component electron plasma to a two-component electron-hole plasma is studied by comparing the experimental results with theoretical line shape models. The density-dependent band gap renormalization is determined for the one-component and the two-component electron-hole plasma. The obtained results are found to agree well with recent theoretical calculations.",
keywords = "Optical properties of thin films surfaces, and thin layer structures (including superlattices, heterostructures, and intercalation compounds), Other luminescence and radiative recombination",
author = "R. Rinaldi and R. Cingolani and M. Ferrara and Yong-Hang Zhang and K. Ploog",
year = "1993",
month = "4",
doi = "10.1007/BF02482402",
language = "English (US)",
volume = "15",
pages = "675--687",
journal = "Nuovo Cimento della Societa Italiana di Fisica D - Condensed Matter, Atomic, Molecular and Chemical Physics, Biophysics",
issn = "0392-6737",
publisher = "Editrice Compositori s.r.l.",
number = "4",

}

TY - JOUR

T1 - Momentum conservation in the luminescence of modulation-doped Ga x In1-x As-Al y In1-y As quantum wells

AU - Rinaldi, R.

AU - Cingolani, R.

AU - Ferrara, M.

AU - Zhang, Yong-Hang

AU - Ploog, K.

PY - 1993/4

Y1 - 1993/4

N2 - The k-conserving selection rule in the electron-hole recombination is investigated by intensity-dependent photoluminescence measurements in n-type modulation-doped Ga x In1-x As-Al y In1-y As single quantum wells intentionally doped with Be acceptors in the well centre. The k-non-conserving recombination process involves electrons with momentum up to the Fermi edge and holes localized on the Be acceptors. The transition from a one-component electron plasma to a two-component electron-hole plasma is studied by comparing the experimental results with theoretical line shape models. The density-dependent band gap renormalization is determined for the one-component and the two-component electron-hole plasma. The obtained results are found to agree well with recent theoretical calculations.

AB - The k-conserving selection rule in the electron-hole recombination is investigated by intensity-dependent photoluminescence measurements in n-type modulation-doped Ga x In1-x As-Al y In1-y As single quantum wells intentionally doped with Be acceptors in the well centre. The k-non-conserving recombination process involves electrons with momentum up to the Fermi edge and holes localized on the Be acceptors. The transition from a one-component electron plasma to a two-component electron-hole plasma is studied by comparing the experimental results with theoretical line shape models. The density-dependent band gap renormalization is determined for the one-component and the two-component electron-hole plasma. The obtained results are found to agree well with recent theoretical calculations.

KW - Optical properties of thin films surfaces, and thin layer structures (including superlattices, heterostructures, and intercalation compounds)

KW - Other luminescence and radiative recombination

UR - http://www.scopus.com/inward/record.url?scp=51249165889&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51249165889&partnerID=8YFLogxK

U2 - 10.1007/BF02482402

DO - 10.1007/BF02482402

M3 - Article

AN - SCOPUS:51249165889

VL - 15

SP - 675

EP - 687

JO - Nuovo Cimento della Societa Italiana di Fisica D - Condensed Matter, Atomic, Molecular and Chemical Physics, Biophysics

JF - Nuovo Cimento della Societa Italiana di Fisica D - Condensed Matter, Atomic, Molecular and Chemical Physics, Biophysics

SN - 0392-6737

IS - 4

ER -