Momentum conservation in the luminescence of modulation-doped Ga x In1-x As-Al y In1-y As quantum wells

R. Rinaldi, R. Cingolani, M. Ferrara, Y. H. Zhang, K. Ploog

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The k-conserving selection rule in the electron-hole recombination is investigated by intensity-dependent photoluminescence measurements in n-type modulation-doped Ga x In1-x As-Al y In1-y As single quantum wells intentionally doped with Be acceptors in the well centre. The k-non-conserving recombination process involves electrons with momentum up to the Fermi edge and holes localized on the Be acceptors. The transition from a one-component electron plasma to a two-component electron-hole plasma is studied by comparing the experimental results with theoretical line shape models. The density-dependent band gap renormalization is determined for the one-component and the two-component electron-hole plasma. The obtained results are found to agree well with recent theoretical calculations.

Original languageEnglish (US)
Pages (from-to)675-687
Number of pages13
JournalIl Nuovo Cimento D
Issue number4
StatePublished - Apr 1993
Externally publishedYes


  • Optical properties of thin films surfaces, and thin layer structures (including superlattices, heterostructures, and intercalation compounds)
  • Other luminescence and radiative recombination

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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