Molecular epitaxy of pseudomorphic Ge1-ySny (y = 0.06-0.17) structures and devices on Si/Ge at ultra-low temperatures via reactions of Ge4H10 and SnD4

P. M. Wallace, C. L. Senaratne, Chi Xu, P. E. Sims, John Kouvetakis, Jose Menendez

Research output: Contribution to journal › Article › peer-review

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