Molecular dynamics simulation of copper thin film growth on β-Ta (002) substrate

Youhong Li, James Adams

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Tantalum can be used both as a diffusion barrier and an adhesion layer for copper metallization for semiconductor devices. Experiments show that β-Ta (200) substrates promote (111) texture growth in copper films. In this study, we first create an embedded atom method (EAM) Cu-Ta potential developed by our force matching method (FMM); then the potential is used for Molecular Dynamics (MD) simulations of initial copper thin film growth on β-Ta substrates. Both Cu/Ta interracial structures and copper film structure are investigated. The relevance to (111) texturing is discussed.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsP.W. DeHaven, D.P. Field, S.D. Harkness IV, J.A. Sutliff, J.A. Szpunar, L Tang, T Thomson, M.D. Vaudin
Pages79-83
Number of pages5
Volume721
StatePublished - 2002
EventMagnetic and Electronic Films - Microstructure, Texture and Application to Data Storage - San Francisco, United States
Duration: Apr 1 2002Apr 4 2002

Other

OtherMagnetic and Electronic Films - Microstructure, Texture and Application to Data Storage
CountryUnited States
CitySan Francisco
Period4/1/024/4/02

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Li, Y., & Adams, J. (2002). Molecular dynamics simulation of copper thin film growth on β-Ta (002) substrate. In P. W. DeHaven, D. P. Field, S. D. Harkness IV, J. A. Sutliff, J. A. Szpunar, L. Tang, T. Thomson, & M. D. Vaudin (Eds.), Materials Research Society Symposium - Proceedings (Vol. 721, pp. 79-83)