Abstract
Tantalum can be used both as a diffusion barrier and an adhesion layer for copper metallization for semiconductor devices. Experiments show that β-Ta (200) substrates promote (111) texture growth in copper films. In this study, we first create an embedded atom method (EAM) Cu-Ta potential developed by our force matching method (FMM); then the potential is used for Molecular Dynamics (MD) simulations of initial copper thin film growth on β-Ta substrates. Both Cu/Ta interracial structures and copper film structure are investigated. The relevance to (111) texturing is discussed.
Original language | English (US) |
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Title of host publication | Materials Research Society Symposium - Proceedings |
Editors | P.W. DeHaven, D.P. Field, S.D. Harkness IV, J.A. Sutliff, J.A. Szpunar, L Tang, T Thomson, M.D. Vaudin |
Pages | 79-83 |
Number of pages | 5 |
Volume | 721 |
State | Published - 2002 |
Event | Magnetic and Electronic Films - Microstructure, Texture and Application to Data Storage - San Francisco, United States Duration: Apr 1 2002 → Apr 4 2002 |
Other
Other | Magnetic and Electronic Films - Microstructure, Texture and Application to Data Storage |
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Country/Territory | United States |
City | San Francisco |
Period | 4/1/02 → 4/4/02 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials