Molecular dynamics simulation of copper thin film growth on β-Ta (002) substrate

Youhong Li; James Adams

Molecular dynamics simulation of copper thin film growth on β-Ta (002) substrate

Youhong Li, James Adams

Chemical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Tantalum can be used both as a diffusion barrier and an adhesion layer for copper metallization for semiconductor devices. Experiments show that β-Ta (200) substrates promote (111) texture growth in copper films. In this study, we first create an embedded atom method (EAM) Cu-Ta potential developed by our force matching method (FMM); then the potential is used for Molecular Dynamics (MD) simulations of initial copper thin film growth on β-Ta substrates. Both Cu/Ta interracial structures and copper film structure are investigated. The relevance to (111) texturing is discussed.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	P.W. DeHaven, D.P. Field, S.D. Harkness IV, J.A. Sutliff, J.A. Szpunar, L Tang, T Thomson, M.D. Vaudin
Pages	79-83
Number of pages	5
Volume	721
State	Published - 2002
Event	Magnetic and Electronic Films - Microstructure, Texture and Application to Data Storage - San Francisco, United States Duration: Apr 1 2002 → Apr 4 2002

Other

Other	Magnetic and Electronic Films - Microstructure, Texture and Application to Data Storage
Country/Territory	United States
City	San Francisco
Period	4/1/02 → 4/4/02

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Molecular dynamics simulation of copper thin film growth on β-Ta (002) substrate. / Li, Youhong; Adams, James.
Materials Research Society Symposium - Proceedings. ed. / P.W. DeHaven; D.P. Field; S.D. Harkness IV; J.A. Sutliff; J.A. Szpunar; L Tang; T Thomson; M.D. Vaudin. Vol. 721 2002. p. 79-83.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Li, Y & Adams, J 2002, Molecular dynamics simulation of copper thin film growth on β-Ta (002) substrate. in PW DeHaven, DP Field, SD Harkness IV, JA Sutliff, JA Szpunar, L Tang, T Thomson & MD Vaudin (eds), Materials Research Society Symposium - Proceedings. vol. 721, pp. 79-83, Magnetic and Electronic Films - Microstructure, Texture and Application to Data Storage, San Francisco, United States, 4/1/02.

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AB - Tantalum can be used both as a diffusion barrier and an adhesion layer for copper metallization for semiconductor devices. Experiments show that β-Ta (200) substrates promote (111) texture growth in copper films. In this study, we first create an embedded atom method (EAM) Cu-Ta potential developed by our force matching method (FMM); then the potential is used for Molecular Dynamics (MD) simulations of initial copper thin film growth on β-Ta substrates. Both Cu/Ta interracial structures and copper film structure are investigated. The relevance to (111) texturing is discussed.

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A2 - Field, D.P.

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ER -

Molecular dynamics simulation of copper thin film growth on β-Ta (002) substrate

Abstract

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ASJC Scopus subject areas

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