Molecular dynamics extensions of Monte Carlo simulation in semiconductor device modeling

David K. Ferry, Alfred M. Kriman, Meng Jeng Kann, Ravindra P. Joshi

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

The modeling of relaxation and transport is semiconductors is often performed using Monte Carlo techniques in which electrons follow free trajectories between discrete scattering events, the scattering events being defined to include carrier-phonon interactions and Coulomb interactions among various carrier species and the ionized impurities. We consider situations in which this approach is inappropriate, and describe corresponding implementations of a more accurate technique in which the usual Monte Carlo technique is combined with a molecular dynamics time evolution between scattering events. In these approaches, the Coulomb interaction is not approximated as screened scattering between pairs of particles, but instead is treated explicitly by allowing the carriers to follow trajectories accelerated by the electric field of the other charges in the system. In one implementation, the particle dynamics incorporates quantum corrections such as exchange interaction.

Original languageEnglish (US)
Pages (from-to)119-134
Number of pages16
JournalComputer Physics Communications
Volume67
Issue number1
DOIs
StatePublished - 1991

Fingerprint

Semiconductor device models
semiconductor devices
Molecular dynamics
Scattering
molecular dynamics
Coulomb interactions
scattering
simulation
Trajectories
trajectories
interactions
Exchange interactions
Electric fields
Impurities
Semiconductor materials
impurities
electric fields
Monte Carlo simulation
Electrons
electrons

ASJC Scopus subject areas

  • Computer Science Applications
  • Physics and Astronomy(all)

Cite this

Molecular dynamics extensions of Monte Carlo simulation in semiconductor device modeling. / Ferry, David K.; Kriman, Alfred M.; Kann, Meng Jeng; Joshi, Ravindra P.

In: Computer Physics Communications, Vol. 67, No. 1, 1991, p. 119-134.

Research output: Contribution to journalArticle

Ferry, David K. ; Kriman, Alfred M. ; Kann, Meng Jeng ; Joshi, Ravindra P. / Molecular dynamics extensions of Monte Carlo simulation in semiconductor device modeling. In: Computer Physics Communications. 1991 ; Vol. 67, No. 1. pp. 119-134.
@article{48f69615e205461bab57e347d4183b2c,
title = "Molecular dynamics extensions of Monte Carlo simulation in semiconductor device modeling",
abstract = "The modeling of relaxation and transport is semiconductors is often performed using Monte Carlo techniques in which electrons follow free trajectories between discrete scattering events, the scattering events being defined to include carrier-phonon interactions and Coulomb interactions among various carrier species and the ionized impurities. We consider situations in which this approach is inappropriate, and describe corresponding implementations of a more accurate technique in which the usual Monte Carlo technique is combined with a molecular dynamics time evolution between scattering events. In these approaches, the Coulomb interaction is not approximated as screened scattering between pairs of particles, but instead is treated explicitly by allowing the carriers to follow trajectories accelerated by the electric field of the other charges in the system. In one implementation, the particle dynamics incorporates quantum corrections such as exchange interaction.",
author = "Ferry, {David K.} and Kriman, {Alfred M.} and Kann, {Meng Jeng} and Joshi, {Ravindra P.}",
year = "1991",
doi = "10.1016/0010-4655(91)90225-A",
language = "English (US)",
volume = "67",
pages = "119--134",
journal = "Computer Physics Communications",
issn = "0010-4655",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Molecular dynamics extensions of Monte Carlo simulation in semiconductor device modeling

AU - Ferry, David K.

AU - Kriman, Alfred M.

AU - Kann, Meng Jeng

AU - Joshi, Ravindra P.

PY - 1991

Y1 - 1991

N2 - The modeling of relaxation and transport is semiconductors is often performed using Monte Carlo techniques in which electrons follow free trajectories between discrete scattering events, the scattering events being defined to include carrier-phonon interactions and Coulomb interactions among various carrier species and the ionized impurities. We consider situations in which this approach is inappropriate, and describe corresponding implementations of a more accurate technique in which the usual Monte Carlo technique is combined with a molecular dynamics time evolution between scattering events. In these approaches, the Coulomb interaction is not approximated as screened scattering between pairs of particles, but instead is treated explicitly by allowing the carriers to follow trajectories accelerated by the electric field of the other charges in the system. In one implementation, the particle dynamics incorporates quantum corrections such as exchange interaction.

AB - The modeling of relaxation and transport is semiconductors is often performed using Monte Carlo techniques in which electrons follow free trajectories between discrete scattering events, the scattering events being defined to include carrier-phonon interactions and Coulomb interactions among various carrier species and the ionized impurities. We consider situations in which this approach is inappropriate, and describe corresponding implementations of a more accurate technique in which the usual Monte Carlo technique is combined with a molecular dynamics time evolution between scattering events. In these approaches, the Coulomb interaction is not approximated as screened scattering between pairs of particles, but instead is treated explicitly by allowing the carriers to follow trajectories accelerated by the electric field of the other charges in the system. In one implementation, the particle dynamics incorporates quantum corrections such as exchange interaction.

UR - http://www.scopus.com/inward/record.url?scp=0026204545&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026204545&partnerID=8YFLogxK

U2 - 10.1016/0010-4655(91)90225-A

DO - 10.1016/0010-4655(91)90225-A

M3 - Article

VL - 67

SP - 119

EP - 134

JO - Computer Physics Communications

JF - Computer Physics Communications

SN - 0010-4655

IS - 1

ER -