Molecular control of the drain current in a buried channel MOSFET

Jinman Yang, L. De La Garza, Trevor Thornton, Michael Kozicki, D. Gust

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present results from a buried channel MOSFET with a molecular monolayer deposited on the surface. After attachment of the monolayer, the threshold voltage of the device shifts by approximately - 4.5 V. We explain this result in terms of an increase in the concentration of fixed positive charge at the upper Si:SiO2 interface due to protonation of the surface by the molecular monolayer. Numerical simulations of the device show that the observed shift in threshold voltage can be explained by an increase of 2.5 × 1011 cm-2 in the positive charge density located at the surface of the MOSFET.

Original languageEnglish (US)
Title of host publication2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002
EditorsM. Laudon, B. Romanowicz
Pages318-321
Number of pages4
StatePublished - 2002
Event2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002 - San Juan, Puerto Rico
Duration: Apr 21 2002Apr 25 2002

Other

Other2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002
CountryPuerto Rico
CitySan Juan
Period4/21/024/25/02

Fingerprint

Drain current
Monolayers
Threshold voltage
Protonation
Charge density
Computer simulation

Keywords

  • Electron transport
  • Molecular electronics
  • SOI

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yang, J., De La Garza, L., Thornton, T., Kozicki, M., & Gust, D. (2002). Molecular control of the drain current in a buried channel MOSFET. In M. Laudon, & B. Romanowicz (Eds.), 2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002 (pp. 318-321)

Molecular control of the drain current in a buried channel MOSFET. / Yang, Jinman; De La Garza, L.; Thornton, Trevor; Kozicki, Michael; Gust, D.

2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002. ed. / M. Laudon; B. Romanowicz. 2002. p. 318-321.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yang, J, De La Garza, L, Thornton, T, Kozicki, M & Gust, D 2002, Molecular control of the drain current in a buried channel MOSFET. in M Laudon & B Romanowicz (eds), 2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002. pp. 318-321, 2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002, San Juan, Puerto Rico, 4/21/02.
Yang J, De La Garza L, Thornton T, Kozicki M, Gust D. Molecular control of the drain current in a buried channel MOSFET. In Laudon M, Romanowicz B, editors, 2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002. 2002. p. 318-321
Yang, Jinman ; De La Garza, L. ; Thornton, Trevor ; Kozicki, Michael ; Gust, D. / Molecular control of the drain current in a buried channel MOSFET. 2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002. editor / M. Laudon ; B. Romanowicz. 2002. pp. 318-321
@inproceedings{11a713d0381f4b5084377b6a029b9adc,
title = "Molecular control of the drain current in a buried channel MOSFET",
abstract = "We present results from a buried channel MOSFET with a molecular monolayer deposited on the surface. After attachment of the monolayer, the threshold voltage of the device shifts by approximately - 4.5 V. We explain this result in terms of an increase in the concentration of fixed positive charge at the upper Si:SiO2 interface due to protonation of the surface by the molecular monolayer. Numerical simulations of the device show that the observed shift in threshold voltage can be explained by an increase of 2.5 × 1011 cm-2 in the positive charge density located at the surface of the MOSFET.",
keywords = "Electron transport, Molecular electronics, SOI",
author = "Jinman Yang and {De La Garza}, L. and Trevor Thornton and Michael Kozicki and D. Gust",
year = "2002",
language = "English (US)",
isbn = "0970827563",
pages = "318--321",
editor = "M. Laudon and B. Romanowicz",
booktitle = "2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002",

}

TY - GEN

T1 - Molecular control of the drain current in a buried channel MOSFET

AU - Yang, Jinman

AU - De La Garza, L.

AU - Thornton, Trevor

AU - Kozicki, Michael

AU - Gust, D.

PY - 2002

Y1 - 2002

N2 - We present results from a buried channel MOSFET with a molecular monolayer deposited on the surface. After attachment of the monolayer, the threshold voltage of the device shifts by approximately - 4.5 V. We explain this result in terms of an increase in the concentration of fixed positive charge at the upper Si:SiO2 interface due to protonation of the surface by the molecular monolayer. Numerical simulations of the device show that the observed shift in threshold voltage can be explained by an increase of 2.5 × 1011 cm-2 in the positive charge density located at the surface of the MOSFET.

AB - We present results from a buried channel MOSFET with a molecular monolayer deposited on the surface. After attachment of the monolayer, the threshold voltage of the device shifts by approximately - 4.5 V. We explain this result in terms of an increase in the concentration of fixed positive charge at the upper Si:SiO2 interface due to protonation of the surface by the molecular monolayer. Numerical simulations of the device show that the observed shift in threshold voltage can be explained by an increase of 2.5 × 1011 cm-2 in the positive charge density located at the surface of the MOSFET.

KW - Electron transport

KW - Molecular electronics

KW - SOI

UR - http://www.scopus.com/inward/record.url?scp=6344280420&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=6344280420&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:6344280420

SN - 0970827563

SP - 318

EP - 321

BT - 2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002

A2 - Laudon, M.

A2 - Romanowicz, B.

ER -