Molecular control of the drain current in a buried channel MOSFET

Jinman Yang; L. De La Garza; Trevor Thornton; Michael Kozicki; D. Gust

Molecular control of the drain current in a buried channel MOSFET

Jinman Yang, L. De La Garza, Trevor Thornton, Michael Kozicki, D. Gust

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We present results from a buried channel MOSFET with a molecular monolayer deposited on the surface. After attachment of the monolayer, the threshold voltage of the device shifts by approximately - 4.5 V. We explain this result in terms of an increase in the concentration of fixed positive charge at the upper Si:SiO₂ interface due to protonation of the surface by the molecular monolayer. Numerical simulations of the device show that the observed shift in threshold voltage can be explained by an increase of 2.5 × 10¹¹ cm^-2 in the positive charge density located at the surface of the MOSFET.

Original language	English (US)
Title of host publication	2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002
Editors	M. Laudon, B. Romanowicz
Pages	318-321
Number of pages	4
State	Published - 2002
Event	2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002 - San Juan, Puerto Rico Duration: Apr 21 2002 → Apr 25 2002

Publication series

Name	2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002

Other

Other	2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002
Country/Territory	Puerto Rico
City	San Juan
Period	4/21/02 → 4/25/02

Keywords

Electron transport
Molecular electronics
SOI

ASJC Scopus subject areas

General Engineering

Cite this

Yang, J., De La Garza, L., Thornton, T., Kozicki, M., & Gust, D. (2002). Molecular control of the drain current in a buried channel MOSFET. In M. Laudon, & B. Romanowicz (Eds.), 2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002 (pp. 318-321). (2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002).

Molecular control of the drain current in a buried channel MOSFET. / Yang, Jinman; De La Garza, L.; Thornton, Trevor et al.
2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002. ed. / M. Laudon; B. Romanowicz. 2002. p. 318-321 (2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yang, J, De La Garza, L, Thornton, T , Kozicki, M & Gust, D 2002, Molecular control of the drain current in a buried channel MOSFET. in M Laudon & B Romanowicz (eds), 2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002. 2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002, pp. 318-321, 2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002, San Juan, Puerto Rico, 4/21/02.

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title = "Molecular control of the drain current in a buried channel MOSFET",

abstract = "We present results from a buried channel MOSFET with a molecular monolayer deposited on the surface. After attachment of the monolayer, the threshold voltage of the device shifts by approximately - 4.5 V. We explain this result in terms of an increase in the concentration of fixed positive charge at the upper Si:SiO2 interface due to protonation of the surface by the molecular monolayer. Numerical simulations of the device show that the observed shift in threshold voltage can be explained by an increase of 2.5 × 1011 cm-2 in the positive charge density located at the surface of the MOSFET.",

keywords = "Electron transport, Molecular electronics, SOI",

author = "Jinman Yang and {De La Garza}, L. and Trevor Thornton and Michael Kozicki and D. Gust",

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language = "English (US)",

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series = "2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002",

pages = "318--321",

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T1 - Molecular control of the drain current in a buried channel MOSFET

AU - Yang, Jinman

AU - De La Garza, L.

AU - Thornton, Trevor

AU - Kozicki, Michael

AU - Gust, D.

PY - 2002

Y1 - 2002

N2 - We present results from a buried channel MOSFET with a molecular monolayer deposited on the surface. After attachment of the monolayer, the threshold voltage of the device shifts by approximately - 4.5 V. We explain this result in terms of an increase in the concentration of fixed positive charge at the upper Si:SiO2 interface due to protonation of the surface by the molecular monolayer. Numerical simulations of the device show that the observed shift in threshold voltage can be explained by an increase of 2.5 × 1011 cm-2 in the positive charge density located at the surface of the MOSFET.

AB - We present results from a buried channel MOSFET with a molecular monolayer deposited on the surface. After attachment of the monolayer, the threshold voltage of the device shifts by approximately - 4.5 V. We explain this result in terms of an increase in the concentration of fixed positive charge at the upper Si:SiO2 interface due to protonation of the surface by the molecular monolayer. Numerical simulations of the device show that the observed shift in threshold voltage can be explained by an increase of 2.5 × 1011 cm-2 in the positive charge density located at the surface of the MOSFET.

KW - Electron transport

KW - Molecular electronics

KW - SOI

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M3 - Conference contribution

AN - SCOPUS:6344280420

SN - 0970827563

T3 - 2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002

SP - 318

EP - 321

BT - 2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002

A2 - Laudon, M.

A2 - Romanowicz, B.

T2 - 2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002

Y2 - 21 April 2002 through 25 April 2002

ER -

Molecular control of the drain current in a buried channel MOSFET

Abstract

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Keywords

ASJC Scopus subject areas

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