Molecular beam epitaxy of InAlN/GaN heterostructures for high electron mobility transistors

D. S. Katzer, D. F. Storm, S. C. Binari, B. V. Shanabrook, A. Torabi, Lin Zhou, David Smith

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

We describe the growth of InAlNGaN heterostructures by rf-plasma molecular beam epitaxy. Due to the weak In-N bond, the InAlN growth temperature must be below about 460 °C for In to incorporate reliably into the film. Thus far, a thin AlN spacer layer has been required to form a low resistance two dimensional electron gas (2DEG) at the InAlNGaN interface. The thin AlN barrier is believed to reduce alloy scattering of carriers in the 2DEG. The best HEMT material with an InAlN barrier and a thin AlN spacer layer has a sheet resistance of 980 Ω/□ with a sheet electron density of 1.96× 1013 cm-2.

Original languageEnglish (US)
Pages (from-to)1204-1208
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume23
Issue number3
DOIs
StatePublished - 2005

Fingerprint

Two dimensional electron gas
High electron mobility transistors
high electron mobility transistors
Molecular beam epitaxy
spacers
Heterojunctions
molecular beam epitaxy
low resistance
electron gas
Sheet resistance
Growth temperature
Carrier concentration
scattering
Scattering
Plasmas
temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Molecular beam epitaxy of InAlN/GaN heterostructures for high electron mobility transistors. / Katzer, D. S.; Storm, D. F.; Binari, S. C.; Shanabrook, B. V.; Torabi, A.; Zhou, Lin; Smith, David.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 3, 2005, p. 1204-1208.

Research output: Contribution to journalArticle

Katzer, D. S. ; Storm, D. F. ; Binari, S. C. ; Shanabrook, B. V. ; Torabi, A. ; Zhou, Lin ; Smith, David. / Molecular beam epitaxy of InAlN/GaN heterostructures for high electron mobility transistors. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2005 ; Vol. 23, No. 3. pp. 1204-1208.
@article{32f8735df8b94b7d93e00c88e5b1d429,
title = "Molecular beam epitaxy of InAlN/GaN heterostructures for high electron mobility transistors",
abstract = "We describe the growth of InAlNGaN heterostructures by rf-plasma molecular beam epitaxy. Due to the weak In-N bond, the InAlN growth temperature must be below about 460 °C for In to incorporate reliably into the film. Thus far, a thin AlN spacer layer has been required to form a low resistance two dimensional electron gas (2DEG) at the InAlNGaN interface. The thin AlN barrier is believed to reduce alloy scattering of carriers in the 2DEG. The best HEMT material with an InAlN barrier and a thin AlN spacer layer has a sheet resistance of 980 Ω/□ with a sheet electron density of 1.96× 1013 cm-2.",
author = "Katzer, {D. S.} and Storm, {D. F.} and Binari, {S. C.} and Shanabrook, {B. V.} and A. Torabi and Lin Zhou and David Smith",
year = "2005",
doi = "10.1116/1.1927103",
language = "English (US)",
volume = "23",
pages = "1204--1208",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "3",

}

TY - JOUR

T1 - Molecular beam epitaxy of InAlN/GaN heterostructures for high electron mobility transistors

AU - Katzer, D. S.

AU - Storm, D. F.

AU - Binari, S. C.

AU - Shanabrook, B. V.

AU - Torabi, A.

AU - Zhou, Lin

AU - Smith, David

PY - 2005

Y1 - 2005

N2 - We describe the growth of InAlNGaN heterostructures by rf-plasma molecular beam epitaxy. Due to the weak In-N bond, the InAlN growth temperature must be below about 460 °C for In to incorporate reliably into the film. Thus far, a thin AlN spacer layer has been required to form a low resistance two dimensional electron gas (2DEG) at the InAlNGaN interface. The thin AlN barrier is believed to reduce alloy scattering of carriers in the 2DEG. The best HEMT material with an InAlN barrier and a thin AlN spacer layer has a sheet resistance of 980 Ω/□ with a sheet electron density of 1.96× 1013 cm-2.

AB - We describe the growth of InAlNGaN heterostructures by rf-plasma molecular beam epitaxy. Due to the weak In-N bond, the InAlN growth temperature must be below about 460 °C for In to incorporate reliably into the film. Thus far, a thin AlN spacer layer has been required to form a low resistance two dimensional electron gas (2DEG) at the InAlNGaN interface. The thin AlN barrier is believed to reduce alloy scattering of carriers in the 2DEG. The best HEMT material with an InAlN barrier and a thin AlN spacer layer has a sheet resistance of 980 Ω/□ with a sheet electron density of 1.96× 1013 cm-2.

UR - http://www.scopus.com/inward/record.url?scp=31144455925&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=31144455925&partnerID=8YFLogxK

U2 - 10.1116/1.1927103

DO - 10.1116/1.1927103

M3 - Article

VL - 23

SP - 1204

EP - 1208

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 3

ER -