Molecular beam epitaxy of InAlN/GaN heterostructures for high electron mobility transistors

D. S. Katzer, D. F. Storm, S. C. Binari, B. V. Shanabrook, A. Torabi, Lin Zhou, David Smith

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Abstract

We describe the growth of InAlNGaN heterostructures by rf-plasma molecular beam epitaxy. Due to the weak In-N bond, the InAlN growth temperature must be below about 460 °C for In to incorporate reliably into the film. Thus far, a thin AlN spacer layer has been required to form a low resistance two dimensional electron gas (2DEG) at the InAlNGaN interface. The thin AlN barrier is believed to reduce alloy scattering of carriers in the 2DEG. The best HEMT material with an InAlN barrier and a thin AlN spacer layer has a sheet resistance of 980 Ω/□ with a sheet electron density of 1.96× 1013 cm-2.

Original languageEnglish (US)
Pages (from-to)1204-1208
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume23
Issue number3
DOIs
StatePublished - Dec 1 2005

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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