We describe the growth of InAlNGaN heterostructures by rf-plasma molecular beam epitaxy. Due to the weak In-N bond, the InAlN growth temperature must be below about 460 °C for In to incorporate reliably into the film. Thus far, a thin AlN spacer layer has been required to form a low resistance two dimensional electron gas (2DEG) at the InAlNGaN interface. The thin AlN barrier is believed to reduce alloy scattering of carriers in the 2DEG. The best HEMT material with an InAlN barrier and a thin AlN spacer layer has a sheet resistance of 980 Ω/□ with a sheet electron density of 1.96× 1013 cm-2.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Dec 1 2005|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering