Molecular beam epitaxy of InAlN/GaN heterostructures for high electron mobility transistors

D. S. Katzer; D. F. Storm; S. C. Binari; B. V. Shanabrook; A. Torabi; Lin Zhou; David Smith

doi:10.1116/1.1927103

Molecular beam epitaxy of InAlN/GaN heterostructures for high electron mobility transistors

D. S. Katzer, D. F. Storm, S. C. Binari, B. V. Shanabrook, A. Torabi, Lin Zhou, David Smith

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

We describe the growth of InAlNGaN heterostructures by rf-plasma molecular beam epitaxy. Due to the weak In-N bond, the InAlN growth temperature must be below about 460 °C for In to incorporate reliably into the film. Thus far, a thin AlN spacer layer has been required to form a low resistance two dimensional electron gas (2DEG) at the InAlNGaN interface. The thin AlN barrier is believed to reduce alloy scattering of carriers in the 2DEG. The best HEMT material with an InAlN barrier and a thin AlN spacer layer has a sheet resistance of 980 Ω/□ with a sheet electron density of 1.96× 1013 cm-2.

Original language	English (US)
Pages (from-to)	1204-1208
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	23
Issue number	3
DOIs	https://doi.org/10.1116/1.1927103
State	Published - 2005

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.1927103

Cite this

@article{32f8735df8b94b7d93e00c88e5b1d429,

title = "Molecular beam epitaxy of InAlN/GaN heterostructures for high electron mobility transistors",

abstract = "We describe the growth of InAlNGaN heterostructures by rf-plasma molecular beam epitaxy. Due to the weak In-N bond, the InAlN growth temperature must be below about 460 °C for In to incorporate reliably into the film. Thus far, a thin AlN spacer layer has been required to form a low resistance two dimensional electron gas (2DEG) at the InAlNGaN interface. The thin AlN barrier is believed to reduce alloy scattering of carriers in the 2DEG. The best HEMT material with an InAlN barrier and a thin AlN spacer layer has a sheet resistance of 980 Ω/□ with a sheet electron density of 1.96× 1013 cm-2.",

author = "Katzer, {D. S.} and Storm, {D. F.} and Binari, {S. C.} and Shanabrook, {B. V.} and A. Torabi and Lin Zhou and David Smith",

note = "Funding Information: The authors appreciate the assistance of N. Green in device processing and M. Ossman in electrical testing. This work was supported by the Office of Naval Research.",

year = "2005",

doi = "10.1116/1.1927103",

language = "English (US)",

volume = "23",

pages = "1204--1208",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "3",

}

TY - JOUR

T1 - Molecular beam epitaxy of InAlN/GaN heterostructures for high electron mobility transistors

AU - Katzer, D. S.

AU - Storm, D. F.

AU - Binari, S. C.

AU - Shanabrook, B. V.

AU - Torabi, A.

AU - Zhou, Lin

AU - Smith, David

N1 - Funding Information: The authors appreciate the assistance of N. Green in device processing and M. Ossman in electrical testing. This work was supported by the Office of Naval Research.

PY - 2005

Y1 - 2005

N2 - We describe the growth of InAlNGaN heterostructures by rf-plasma molecular beam epitaxy. Due to the weak In-N bond, the InAlN growth temperature must be below about 460 °C for In to incorporate reliably into the film. Thus far, a thin AlN spacer layer has been required to form a low resistance two dimensional electron gas (2DEG) at the InAlNGaN interface. The thin AlN barrier is believed to reduce alloy scattering of carriers in the 2DEG. The best HEMT material with an InAlN barrier and a thin AlN spacer layer has a sheet resistance of 980 Ω/□ with a sheet electron density of 1.96× 1013 cm-2.

AB - We describe the growth of InAlNGaN heterostructures by rf-plasma molecular beam epitaxy. Due to the weak In-N bond, the InAlN growth temperature must be below about 460 °C for In to incorporate reliably into the film. Thus far, a thin AlN spacer layer has been required to form a low resistance two dimensional electron gas (2DEG) at the InAlNGaN interface. The thin AlN barrier is believed to reduce alloy scattering of carriers in the 2DEG. The best HEMT material with an InAlN barrier and a thin AlN spacer layer has a sheet resistance of 980 Ω/□ with a sheet electron density of 1.96× 1013 cm-2.

UR - http://www.scopus.com/inward/record.url?scp=31144455925&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=31144455925&partnerID=8YFLogxK

U2 - 10.1116/1.1927103

DO - 10.1116/1.1927103

M3 - Article

AN - SCOPUS:31144455925

SN - 1071-1023

VL - 23

SP - 1204

EP - 1208

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

ER -

Molecular beam epitaxy of InAlN/GaN heterostructures for high electron mobility transistors

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this