TY - JOUR
T1 - Molecular beam epitaxy growth of antimony-based mid-infrared interband cascade photodetectors
AU - Tian, Zhao Bing
AU - Schuler-Sandy, Ted
AU - Krishna, Sanjay
AU - Tang, Dinghao
AU - Smith, David
N1 - Funding Information:
The authors acknowledge Douglas Wozniak for his technical assistance in AFM measurement. This work is supported in part by AFOSR, United States under Grant number FA9550-10-1-0113 . Part of the device fabrication was performed at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science by Los Alamos National Laboratory (Contract DE-AC52-06NA25396 ) and Sandia National Laboratories , United States (Contract DE-AC04-94AL85000 ). DT and DJS acknowledge the user facilities in John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.
Publisher Copyright:
© 2015 Elsevier B.V.
PY - 2015/7/28
Y1 - 2015/7/28
N2 - The molecular beam epitaxial growth and optimization of antimony-based interband cascade photodetectors, on both GaSb and GaAs substrates, are presented. Material characterization techniques, including X-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy, are used to evaluate the epitaxial material quality. This work has led to the demonstration of mid-infrared photodetectors operational up to a record-high 450 K, and a dark current density as low as 1.10×10-7 A/cm2 at 150 K. The results also suggest that further improved material quality and device performance can be expected via optimization of growth parameters.
AB - The molecular beam epitaxial growth and optimization of antimony-based interband cascade photodetectors, on both GaSb and GaAs substrates, are presented. Material characterization techniques, including X-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy, are used to evaluate the epitaxial material quality. This work has led to the demonstration of mid-infrared photodetectors operational up to a record-high 450 K, and a dark current density as low as 1.10×10-7 A/cm2 at 150 K. The results also suggest that further improved material quality and device performance can be expected via optimization of growth parameters.
KW - A3. AlSb/InAs/GaSb quantum wells
KW - A3. Molecular beam epitaxy
KW - A3. Type-II superlattices
KW - B3. Infrared photodetectors
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U2 - 10.1016/j.jcrysgro.2015.02.062
DO - 10.1016/j.jcrysgro.2015.02.062
M3 - Article
AN - SCOPUS:84979961098
VL - 425
SP - 364
EP - 368
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -