Molecular beam epitaxy growth of antimony-based mid-infrared interband cascade photodetectors

Zhao Bing Tian, Ted Schuler-Sandy, Sanjay Krishna, Dinghao Tang, David Smith

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

The molecular beam epitaxial growth and optimization of antimony-based interband cascade photodetectors, on both GaSb and GaAs substrates, are presented. Material characterization techniques, including X-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy, are used to evaluate the epitaxial material quality. This work has led to the demonstration of mid-infrared photodetectors operational up to a record-high 450 K, and a dark current density as low as 1.10×10-7 A/cm2 at 150 K. The results also suggest that further improved material quality and device performance can be expected via optimization of growth parameters.

Original languageEnglish (US)
Pages (from-to)364-368
Number of pages5
JournalJournal of Crystal Growth
Volume425
DOIs
StatePublished - Jun 20 2015

Keywords

  • A3. AlSb/InAs/GaSb quantum wells
  • A3. Molecular beam epitaxy
  • A3. Type-II superlattices
  • B3. Infrared photodetectors

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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