Abstract
The molecular beam epitaxial growth and optimization of antimony-based interband cascade photodetectors, on both GaSb and GaAs substrates, are presented. Material characterization techniques, including X-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy, are used to evaluate the epitaxial material quality. This work has led to the demonstration of mid-infrared photodetectors operational up to a record-high 450 K, and a dark current density as low as 1.10×10-7 A/cm2 at 150 K. The results also suggest that further improved material quality and device performance can be expected via optimization of growth parameters.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 364-368 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 425 |
| DOIs | |
| State | Published - Jun 20 2015 |
Keywords
- A3. AlSb/InAs/GaSb quantum wells
- A3. Molecular beam epitaxy
- A3. Type-II superlattices
- B3. Infrared photodetectors
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Cite this
Tian, Z. B., Schuler-Sandy, T., Krishna, S., Tang, D., & Smith, D. (2015). Molecular beam epitaxy growth of antimony-based mid-infrared interband cascade photodetectors. Journal of Crystal Growth, 425, 364-368. https://doi.org/10.1016/j.jcrysgro.2015.02.062