Abstract
The molecular beam epitaxial growth and optimization of antimony-based interband cascade photodetectors, on both GaSb and GaAs substrates, are presented. Material characterization techniques, including X-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy, are used to evaluate the epitaxial material quality. This work has led to the demonstration of mid-infrared photodetectors operational up to a record-high 450 K, and a dark current density as low as 1.10×10-7 A/cm2 at 150 K. The results also suggest that further improved material quality and device performance can be expected via optimization of growth parameters.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 364-368 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 425 |
| DOIs | |
| State | Published - Jun 20 2015 |
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Keywords
- A3. AlSb/InAs/GaSb quantum wells
- A3. Molecular beam epitaxy
- A3. Type-II superlattices
- B3. Infrared photodetectors
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
Cite this
Molecular beam epitaxy growth of antimony-based mid-infrared interband cascade photodetectors. / Tian, Zhao Bing; Schuler-Sandy, Ted; Krishna, Sanjay; Tang, Dinghao; Smith, David.
In: Journal of Crystal Growth, Vol. 425, 20.06.2015, p. 364-368.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Molecular beam epitaxy growth of antimony-based mid-infrared interband cascade photodetectors
AU - Tian, Zhao Bing
AU - Schuler-Sandy, Ted
AU - Krishna, Sanjay
AU - Tang, Dinghao
AU - Smith, David
PY - 2015/6/20
Y1 - 2015/6/20
N2 - The molecular beam epitaxial growth and optimization of antimony-based interband cascade photodetectors, on both GaSb and GaAs substrates, are presented. Material characterization techniques, including X-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy, are used to evaluate the epitaxial material quality. This work has led to the demonstration of mid-infrared photodetectors operational up to a record-high 450 K, and a dark current density as low as 1.10×10-7 A/cm2 at 150 K. The results also suggest that further improved material quality and device performance can be expected via optimization of growth parameters.
AB - The molecular beam epitaxial growth and optimization of antimony-based interband cascade photodetectors, on both GaSb and GaAs substrates, are presented. Material characterization techniques, including X-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy, are used to evaluate the epitaxial material quality. This work has led to the demonstration of mid-infrared photodetectors operational up to a record-high 450 K, and a dark current density as low as 1.10×10-7 A/cm2 at 150 K. The results also suggest that further improved material quality and device performance can be expected via optimization of growth parameters.
KW - A3. AlSb/InAs/GaSb quantum wells
KW - A3. Molecular beam epitaxy
KW - A3. Type-II superlattices
KW - B3. Infrared photodetectors
UR - http://www.scopus.com/inward/record.url?scp=84979961098&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84979961098&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2015.02.062
DO - 10.1016/j.jcrysgro.2015.02.062
M3 - Article
AN - SCOPUS:84979961098
VL - 425
SP - 364
EP - 368
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -