Abstract
The molecular beam epitaxial growth and optimization of antimony-based interband cascade photodetectors, on both GaSb and GaAs substrates, are presented. Material characterization techniques, including X-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy, are used to evaluate the epitaxial material quality. This work has led to the demonstration of mid-infrared photodetectors operational up to a record-high 450 K, and a dark current density as low as 1.10×10-7 A/cm2 at 150 K. The results also suggest that further improved material quality and device performance can be expected via optimization of growth parameters.
Original language | English (US) |
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Pages (from-to) | 364-368 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 425 |
DOIs | |
State | Published - Jul 28 2015 |
Keywords
- A3. AlSb/InAs/GaSb quantum wells
- A3. Molecular beam epitaxy
- A3. Type-II superlattices
- B3. Infrared photodetectors
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry