Molecular beam epitaxial growth of ZnSe on GaAs substrates: Influence of precursors on interface quality

C. C. Kim, Y. P. Chen, S. Sivananthan, S. C Y Tsen, David Smith

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The initial growth of thin ZnSe layers, grown on GaAs(0 0 1) using molecular beam epitaxy (MBE), has been studied using real-time reflection high-energy electron diffraction (RHEED), as well as X-ray double-crystal rocking curves (DCRC), reflectivity difference spectroscopy (RDS) and transmission electron microscopy (TEM). A noticeable difference in interface quality and growth was observed depending upon the initial precursor. Exposure to Se flux before growth led initially to three-dimensional growth, whereas exposure to Zn flux or no precursor led immediately to two-dimensional growth. X-ray DCRC and RDS confirmed that the overall sample quality was better with two-dimensional growth, and TEM observations were consistent with previous studies which have shown that initial three-dimensional growth is related to the formation of Ga2Se3 at the interface, leading to high densities of stacking faults and edge dislocations.

Original languageEnglish (US)
Pages (from-to)613-618
Number of pages6
JournalJournal of Crystal Growth
Volume175-176
Issue numberPART 1
StatePublished - May 1997

Fingerprint

Molecular beams
Epitaxial growth
molecular beams
Substrates
Spectroscopy
Fluxes
Transmission electron microscopy
reflectance
X rays
Edge dislocations
transmission electron microscopy
Crystals
Reflection high energy electron diffraction
edge dislocations
Stacking faults
curves
gallium arsenide
Molecular beam epitaxy
crystal defects
high energy electrons

Keywords

  • Interface
  • MBE
  • Precursor
  • RDS
  • RHEED
  • X-ray

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Kim, C. C., Chen, Y. P., Sivananthan, S., Tsen, S. C. Y., & Smith, D. (1997). Molecular beam epitaxial growth of ZnSe on GaAs substrates: Influence of precursors on interface quality. Journal of Crystal Growth, 175-176(PART 1), 613-618.

Molecular beam epitaxial growth of ZnSe on GaAs substrates : Influence of precursors on interface quality. / Kim, C. C.; Chen, Y. P.; Sivananthan, S.; Tsen, S. C Y; Smith, David.

In: Journal of Crystal Growth, Vol. 175-176, No. PART 1, 05.1997, p. 613-618.

Research output: Contribution to journalArticle

Kim, CC, Chen, YP, Sivananthan, S, Tsen, SCY & Smith, D 1997, 'Molecular beam epitaxial growth of ZnSe on GaAs substrates: Influence of precursors on interface quality', Journal of Crystal Growth, vol. 175-176, no. PART 1, pp. 613-618.
Kim, C. C. ; Chen, Y. P. ; Sivananthan, S. ; Tsen, S. C Y ; Smith, David. / Molecular beam epitaxial growth of ZnSe on GaAs substrates : Influence of precursors on interface quality. In: Journal of Crystal Growth. 1997 ; Vol. 175-176, No. PART 1. pp. 613-618.
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