Molecular beam epitaxial growth of ZnSe on GaAs substrates: Influence of precursors on interface quality

C. C. Kim, Y. P. Chen, S. Sivananthan, S. C Y Tsen, David Smith

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The initial growth of thin ZnSe layers, grown on GaAs(0 0 1) using molecular beam epitaxy (MBE), has been studied using real-time reflection high-energy electron diffraction (RHEED), as well as X-ray double-crystal rocking curves (DCRC), reflectivity difference spectroscopy (RDS) and transmission electron microscopy (TEM). A noticeable difference in interface quality and growth was observed depending upon the initial precursor. Exposure to Se flux before growth led initially to three-dimensional growth, whereas exposure to Zn flux or no precursor led immediately to two-dimensional growth. X-ray DCRC and RDS confirmed that the overall sample quality was better with two-dimensional growth, and TEM observations were consistent with previous studies which have shown that initial three-dimensional growth is related to the formation of Ga2Se3 at the interface, leading to high densities of stacking faults and edge dislocations.

Original languageEnglish (US)
Pages (from-to)613-618
Number of pages6
JournalJournal of Crystal Growth
Volume175-176
Issue numberPART 1
DOIs
StatePublished - May 1997

Keywords

  • Interface
  • MBE
  • Precursor
  • RDS
  • RHEED
  • X-ray

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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