TY - JOUR
T1 - Molecular beam epitaxial growth of high-reflectivity and broad-bandwidth ZnTe/GaSb distributed Bragg reflectors
AU - Fan, Jin
AU - Liu, Xinyu
AU - Ouyang, Lu
AU - Pimpinella, Richard E.
AU - Dobrowolska, Margaret
AU - Furdyna, Jacek K.
AU - Smith, David
AU - Zhang, Yong-Hang
N1 - Funding Information:
The work at ASU was partially supported by a Science Foundation Arizona grant (SRG 0339-08) and an AFOSR (FA9550-10-1-0129). ASU and Notre Dame were also jointly supported by an NSF grant (ECCS-1002072). The authors gratefully acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy, the Center for Solid State Electronics Research, and the LeRoyEyring Center for Solid State Science at Arizona State University.
PY - 2013/5
Y1 - 2013/5
N2 - This paper reports the molecular beam epitaxial growth and characterization of high-reflectivity and broad-bandwidth distributed Bragg reflectors (DBRs) made of ZnTe/GaSb quarter-wavelength (λ/4) layers for optoelectronic applications in the midwave infrared spectral range (2-5 μm). A series of ZnTe/GaSb DBRs has been successfully grown on GaSb (001) substrates using molecular beam epitaxy (MBE). During the MBE growth, a temperature ramp was applied to the initial growth of GaSb layers on ZnTe to protect the ZnTe underneath from damage due to thermal evaporation. Post-growth characterization using high-resolution x-ray diffraction, atomic force microscopy, and transmission electron microscopy reveals smooth surface morphology, low defect density, and coherent interfaces. Reflectance spectroscopy results show that a DBR sample of seven λ/4 pairs has a peak reflectance as high as 99.0% centered at 2.56 μm with a bandwidth of 517 nm.
AB - This paper reports the molecular beam epitaxial growth and characterization of high-reflectivity and broad-bandwidth distributed Bragg reflectors (DBRs) made of ZnTe/GaSb quarter-wavelength (λ/4) layers for optoelectronic applications in the midwave infrared spectral range (2-5 μm). A series of ZnTe/GaSb DBRs has been successfully grown on GaSb (001) substrates using molecular beam epitaxy (MBE). During the MBE growth, a temperature ramp was applied to the initial growth of GaSb layers on ZnTe to protect the ZnTe underneath from damage due to thermal evaporation. Post-growth characterization using high-resolution x-ray diffraction, atomic force microscopy, and transmission electron microscopy reveals smooth surface morphology, low defect density, and coherent interfaces. Reflectance spectroscopy results show that a DBR sample of seven λ/4 pairs has a peak reflectance as high as 99.0% centered at 2.56 μm with a bandwidth of 517 nm.
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U2 - 10.1116/1.4793475
DO - 10.1116/1.4793475
M3 - Article
AN - SCOPUS:84878352468
SN - 2166-2746
VL - 31
JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
IS - 3
M1 - 03C109
ER -