Abstract

This paper reports the molecular beam epitaxial growth and characterization of high-reflectivity and broad-bandwidth distributed Bragg reflectors (DBRs) made of ZnTe/GaSb quarter-wavelength (λ/4) layers for optoelectronic applications in the midwave infrared spectral range (2-5 μm). A series of ZnTe/GaSb DBRs has been successfully grown on GaSb (001) substrates using molecular beam epitaxy (MBE). During the MBE growth, a temperature ramp was applied to the initial growth of GaSb layers on ZnTe to protect the ZnTe underneath from damage due to thermal evaporation. Post-growth characterization using high-resolution x-ray diffraction, atomic force microscopy, and transmission electron microscopy reveals smooth surface morphology, low defect density, and coherent interfaces. Reflectance spectroscopy results show that a DBR sample of seven λ/4 pairs has a peak reflectance as high as 99.0% centered at 2.56 μm with a bandwidth of 517 nm.

Original languageEnglish (US)
Article number03C109
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume31
Issue number3
DOIs
StatePublished - May 2013

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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