Molecular beam epitaxial growth and structural properties of hetero-crystalline and heterovalent PbTe/CdTe/InSb structures

Maxwell B. Lassise, Tyler T. McCarthy, Brian D. Tracy, David J. Smith, Yong Hang Zhang

    Research output: Contribution to journalArticle

    Abstract

    Rock-salt lead chalcogenides such as PbTe are of much current interest for the physics study of quantum materials as a topological insulator and practical applications for infrared photodetectors. Heterocrystalline (rock-salt on zincblende) and heterovalent PbTe/CdTe/InSb heterostructures are grown on (001) InSb substrates using a single-chamber molecular beam epitaxy system. Elemental Pb and Te sources are used to independently vary the flux conditions at the heterocrystalline interface in nearly lattice-matched PbTe/InSb and PbTe/CdTe heterostructures. A streaky (1 × 1) surface reconstruction is observed during the growth of thicker PbTe layers on both InSb and CdTe, signifying smooth layer-by-layer growth. The thickness required for smooth PbTe growth on nearly lattice-matched zincblende materials can be minimized with the proper choice of growth conditions, particularly at the heterocrystalline interface. Characterization with x-ray diffraction indicates good crystalline quality, and observations by transmission electron microscopy reveal sharp interfaces between the PbTe and CdTe films.

    Original languageEnglish (US)
    Article number045708
    JournalJournal of Applied Physics
    Volume126
    Issue number4
    DOIs
    StatePublished - Jul 28 2019

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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