Abstract

We develop a modified pulsed MOS technique for measuring generation lifetime in ultraclean and thin p/p+ epitaxial layers, which can be used to detect metallic impurities with densities as low as 1010 cm-3. The widely used classic version is shown to be unable to effectively detect such low impurity densities because of the domination of surface generation; whereas, recombination lifetime measurement techniques have serious limitations for layers that have smaller thicknesses than the minority carrier diffusion length.

Original languageEnglish (US)
Article number6547165
Pages (from-to)2592-2597
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume60
Issue number8
DOIs
StatePublished - Aug 5 2013

Keywords

  • Carrier lifetimes
  • Epitaxial layers
  • MOS capacitors
  • Semiconductor defects
  • Semiconductor device measurements
  • Semiconductor materials
  • Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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