Modified pulsed MOS capacitor for characterization of ultraclean thin p/p+ silicon epitaxial layers

Arash Elhami Khorasani, Terry Alford, Dieter K. Schroder

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


We develop a modified pulsed MOS technique for measuring generation lifetime in ultraclean and thin p/p+ epitaxial layers, which can be used to detect metallic impurities with densities as low as 1010 cm-3. The widely used classic version is shown to be unable to effectively detect such low impurity densities because of the domination of surface generation; whereas, recombination lifetime measurement techniques have serious limitations for layers that have smaller thicknesses than the minority carrier diffusion length.

Original languageEnglish (US)
Article number6547165
Pages (from-to)2592-2597
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number8
StatePublished - 2013


  • Carrier lifetimes
  • Epitaxial layers
  • MOS capacitors
  • Semiconductor defects
  • Semiconductor device measurements
  • Semiconductor materials
  • Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of 'Modified pulsed MOS capacitor for characterization of ultraclean thin p/p<sup>+</sup> silicon epitaxial layers'. Together they form a unique fingerprint.

Cite this