Moderated degradation enhancement of lateral pnp transistors due to measurement bias

S. C. Witczak, R. D. Schrimpf, Hugh Barnaby, R. C. Lacoe, D. C. Mayer, K. F. Galloway, R. L. Pease, D. M. Fleetwood

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Enhanced low-dose-rate gain degradation of ADI RF25 lateral pnp transistors is examined as a function of the bias at which the gain is measured. Degradation enhancement at low dose rates diminishes rapidly with increasing measurement bias between the emitter and the base. Device simulations reveal that interface trap charging, field effects from oxide trapped charge and emitter metallization, base series resistance and high-level carrier injection all contribute to this behavior. As a practical consequence, accelerated hardness assurance tests of this device require higher irradiation temperatures or larger design margins for low power applications.

Original languageEnglish (US)
Pages (from-to)2644-2648
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume45
Issue number6 PART 1
DOIs
StatePublished - 1998
Externally publishedYes

Fingerprint

Transistors
emitters
transistors
degradation
Degradation
dosage
augmentation
carrier injection
assurance
Metallizing
charging
margins
hardness
Hardness
traps
Irradiation
irradiation
Oxides
oxides
simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

Cite this

Witczak, S. C., Schrimpf, R. D., Barnaby, H., Lacoe, R. C., Mayer, D. C., Galloway, K. F., ... Fleetwood, D. M. (1998). Moderated degradation enhancement of lateral pnp transistors due to measurement bias. IEEE Transactions on Nuclear Science, 45(6 PART 1), 2644-2648. https://doi.org/10.1109/23.736509

Moderated degradation enhancement of lateral pnp transistors due to measurement bias. / Witczak, S. C.; Schrimpf, R. D.; Barnaby, Hugh; Lacoe, R. C.; Mayer, D. C.; Galloway, K. F.; Pease, R. L.; Fleetwood, D. M.

In: IEEE Transactions on Nuclear Science, Vol. 45, No. 6 PART 1, 1998, p. 2644-2648.

Research output: Contribution to journalArticle

Witczak, SC, Schrimpf, RD, Barnaby, H, Lacoe, RC, Mayer, DC, Galloway, KF, Pease, RL & Fleetwood, DM 1998, 'Moderated degradation enhancement of lateral pnp transistors due to measurement bias', IEEE Transactions on Nuclear Science, vol. 45, no. 6 PART 1, pp. 2644-2648. https://doi.org/10.1109/23.736509
Witczak, S. C. ; Schrimpf, R. D. ; Barnaby, Hugh ; Lacoe, R. C. ; Mayer, D. C. ; Galloway, K. F. ; Pease, R. L. ; Fleetwood, D. M. / Moderated degradation enhancement of lateral pnp transistors due to measurement bias. In: IEEE Transactions on Nuclear Science. 1998 ; Vol. 45, No. 6 PART 1. pp. 2644-2648.
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