Moderated degradation enhancement of lateral pnp transistors due to measurement bias

S. C. Witczak, R. D. Schrimpf, H. J. Barnaby, R. C. Lacoe, D. C. Mayer, K. F. Galloway, R. L. Pease, D. M. Fleetwood

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

Enhanced low-dose-rate gain degradation of ADI RF25 lateral pnp transistors is examined as a function of the bias at which the gain is measured. Degradation enhancement at low dose rates diminishes rapidly with increasing measurement bias between the emitter and the base. Device simulations reveal that interface trap charging, field effects from oxide trapped charge and emitter metallization, base series resistance and high-level carrier injection all contribute to this behavior. As a practical consequence, accelerated hardness assurance tests of this device require higher irradiation temperatures or larger design margins for low power applications.

Original languageEnglish (US)
Pages (from-to)2644-2648
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume45
Issue number6 PART 1
DOIs
StatePublished - Dec 1 1998
Externally publishedYes

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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