Moderated degradation enhancement of lateral pnp transistors due to measurement bias

S. C. Witczak; R. D. Schrimpf; H. J. Barnaby; R. C. Lacoe; D. C. Mayer; K. F. Galloway; R. L. Pease; D. M. Fleetwood

doi:10.1109/23.736509

Moderated degradation enhancement of lateral pnp transistors due to measurement bias

S. C. Witczak, R. D. Schrimpf, H. J. Barnaby, R. C. Lacoe, D. C. Mayer, K. F. Galloway, R. L. Pease, D. M. Fleetwood

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Enhanced low-dose-rate gain degradation of ADI RF25 lateral pnp transistors is examined as a function of the bias at which the gain is measured. Degradation enhancement at low dose rates diminishes rapidly with increasing measurement bias between the emitter and the base. Device simulations reveal that interface trap charging, field effects from oxide trapped charge and emitter metallization, base series resistance and high-level carrier injection all contribute to this behavior. As a practical consequence, accelerated hardness assurance tests of this device require higher irradiation temperatures or larger design margins for low power applications.

Original language	English (US)
Pages (from-to)	2644-2648
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	45
Issue number	6 PART 1
DOIs	https://doi.org/10.1109/23.736509
State	Published - 1998
Externally published	Yes

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/23.736509

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@article{d093d9836911459cbb9d0a598ed0bf80,

title = "Moderated degradation enhancement of lateral pnp transistors due to measurement bias",

abstract = "Enhanced low-dose-rate gain degradation of ADI RF25 lateral pnp transistors is examined as a function of the bias at which the gain is measured. Degradation enhancement at low dose rates diminishes rapidly with increasing measurement bias between the emitter and the base. Device simulations reveal that interface trap charging, field effects from oxide trapped charge and emitter metallization, base series resistance and high-level carrier injection all contribute to this behavior. As a practical consequence, accelerated hardness assurance tests of this device require higher irradiation temperatures or larger design margins for low power applications.",

author = "Witczak, {S. C.} and Schrimpf, {R. D.} and Barnaby, {H. J.} and Lacoe, {R. C.} and Mayer, {D. C.} and Galloway, {K. F.} and Pease, {R. L.} and Fleetwood, {D. M.}",

note = "Funding Information: ons Agency and P. Winokur of Sandia National Laboratories for technical discussions of this work. Work performed at The Aerospace Corporation was supported by the U.S. Air Force Space and Missile Center under Contract No. F04701- 93-C-0094. Work performed at Vanderbilt University and RLP Research, Inc. was supported by the Defense Special Weapons Agency. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the U.S. Department of Energy under Contract No. DE- AC04-94AL85000.",

year = "1998",

doi = "10.1109/23.736509",

language = "English (US)",

volume = "45",

pages = "2644--2648",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6 PART 1",

}

TY - JOUR

T1 - Moderated degradation enhancement of lateral pnp transistors due to measurement bias

AU - Witczak, S. C.

AU - Schrimpf, R. D.

AU - Barnaby, H. J.

AU - Lacoe, R. C.

AU - Mayer, D. C.

AU - Galloway, K. F.

AU - Pease, R. L.

AU - Fleetwood, D. M.

N1 - Funding Information: ons Agency and P. Winokur of Sandia National Laboratories for technical discussions of this work. Work performed at The Aerospace Corporation was supported by the U.S. Air Force Space and Missile Center under Contract No. F04701- 93-C-0094. Work performed at Vanderbilt University and RLP Research, Inc. was supported by the Defense Special Weapons Agency. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the U.S. Department of Energy under Contract No. DE- AC04-94AL85000.

PY - 1998

Y1 - 1998

N2 - Enhanced low-dose-rate gain degradation of ADI RF25 lateral pnp transistors is examined as a function of the bias at which the gain is measured. Degradation enhancement at low dose rates diminishes rapidly with increasing measurement bias between the emitter and the base. Device simulations reveal that interface trap charging, field effects from oxide trapped charge and emitter metallization, base series resistance and high-level carrier injection all contribute to this behavior. As a practical consequence, accelerated hardness assurance tests of this device require higher irradiation temperatures or larger design margins for low power applications.

AB - Enhanced low-dose-rate gain degradation of ADI RF25 lateral pnp transistors is examined as a function of the bias at which the gain is measured. Degradation enhancement at low dose rates diminishes rapidly with increasing measurement bias between the emitter and the base. Device simulations reveal that interface trap charging, field effects from oxide trapped charge and emitter metallization, base series resistance and high-level carrier injection all contribute to this behavior. As a practical consequence, accelerated hardness assurance tests of this device require higher irradiation temperatures or larger design margins for low power applications.

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JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6 PART 1

ER -

Moderated degradation enhancement of lateral pnp transistors due to measurement bias

Abstract

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