Modelling of narrow-width SOI devices

Shaikh S. Ahmed, Dragica Vasileska

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

We have investigated the impact of quantum-mechanical space-quantization effects on the operation of a narrow-width SOI device structure. The presence of a two-dimensional carrier confinement results not only in a significant increase in the threshold voltage but also in its pronounced channel width dependence. In this work, we have used classical 3D Monte Carlo particle-based simulations. Quantum-mechanical space-quantization effects have been accounted for via an effective potential scheme. In a second effort, we have studied the fluctuations in the device characteristics introduced by discreteness of charge in the channel region of the device.

Original languageEnglish (US)
Pages (from-to)S131-S133
JournalSemiconductor Science and Technology
Volume19
Issue number4 SPEC. ISS.
DOIs
StatePublished - Apr 1 2004

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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