Modeling Time to Failure in Potential-Induced Degradation of Silicon Solar Modules based on Quantitative Sodium Kinetics

Guillaume Von Gastrow, Erick Martinez Loran, Jacob Clenney, Rico Meier, Jorge Ochoa Bueno, Mariana I. Bertoni, David P. Fenning

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present a physics-based simulation environment for the prediction of potential-induced-degradation (PID) failure time in silicon solar modules. Our model is based on experimental sodium migration kinetics obtained from our recently developed trap-corrected bias-stress-temperature method and from secondary ion mass spectrometry measurements. We model sodium migration to stacking faults and subsequent formation of conductive pathways through the p-n junction, which causes a decrease of the shunt resistance and loss of efficiency.

Original languageEnglish (US)
Title of host publication2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2207-2209
Number of pages3
ISBN (Electronic)9781728161150
DOIs
StatePublished - Jun 14 2020
Externally publishedYes
Event47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada
Duration: Jun 15 2020Aug 21 2020

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2020-June
ISSN (Print)0160-8371

Conference

Conference47th IEEE Photovoltaic Specialists Conference, PVSC 2020
CountryCanada
CityCalgary
Period6/15/208/21/20

Keywords

  • Potential-induced-degradation
  • shunt
  • silicon
  • sodium

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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