Abstract

In current semiconductor integrated circuit (IC) technology, the minimum feature size of transistors is about 22 nm, and the projected size of next generation devices will be well below that. This continued miniaturization of electronic components results in higher heat generation densities inside the device. Non-uniform power distribution across the die surface, and sub-continuum effects cause large temperature gradients and localized hot spots over the die. This overheating of the die surface hinders the performance and reliability of these devices; and therefore, makes thermal management a crucial step for further developments. Herein we discuss the self-heating effects and their implications on the operation of different generations of silicon on insulator devices.

Original languageEnglish (US)
Pages (from-to)163-167
Number of pages5
JournalMicroelectronic Engineering
Volume109
DOIs
StatePublished - 2013

Fingerprint

Thermal effects
temperature effects
Heat generation
Silicon
Temperature control
Thermal gradients
Integrated circuits
heat generation
Transistors
miniaturization
Semiconductor materials
integrated circuits
Heating
temperature gradients
transistors
insulators
continuums
heating
causes
silicon

Keywords

  • Particle-based device simulators
  • Phonon energy balance equations
  • Self-heating
  • SOI devices

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Modeling thermal effects in nano-devices. / Vasileska, Dragica.

In: Microelectronic Engineering, Vol. 109, 2013, p. 163-167.

Research output: Contribution to journalArticle

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