Abstract

In this work we continue our investigation on the heating effects in nano-scale FD-SOI devices using an in-house thermal particle-based device simulator. We focus on the current variations for FD-SOI devices with arbitrary crystallographic orientation and examine which crystallographic orientation gives better results from electrical and thermal point of view. Our simulation results demonstrate that one can obtain the lowest current degradation with (110) wafer orientation. The temperature of the hot-spot is the smallest for (110)-orientation as well.

Original languageEnglish (US)
Title of host publicationNumerical Methods and Applications - 7th International Conference, NMA 2010, Revised Papers
Pages103-109
Number of pages7
DOIs
StatePublished - Mar 1 2011
Event7th International Conference on Numerical Methods and Applications, NMA 2010 - Borovets, Bulgaria
Duration: Aug 20 2010Aug 24 2010

Publication series

NameLecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
Volume6046 LNCS
ISSN (Print)0302-9743
ISSN (Electronic)1611-3349

Other

Other7th International Conference on Numerical Methods and Applications, NMA 2010
CountryBulgaria
CityBorovets
Period8/20/108/24/10

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Keywords

  • crystallographic orientation
  • nano-scale FD-SOI devices
  • particle-based device simulations
  • self-heating effects

ASJC Scopus subject areas

  • Theoretical Computer Science
  • Computer Science(all)

Cite this

Raleva, K., Vasileska, D., & Goodnick, S. (2011). Modeling thermal effects in fully-depleted SOI devices with arbitrary crystallographic orientation. In Numerical Methods and Applications - 7th International Conference, NMA 2010, Revised Papers (pp. 103-109). (Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics); Vol. 6046 LNCS). https://doi.org/10.1007/978-3-642-18466-6_11