Abstract

In this work we continue our investigation on the heating effects in nano-scale FD-SOI devices using an in-house thermal particle-based device simulator. We focus on the current variations for FD-SOI devices with arbitrary crystallographic orientation and examine which crystallographic orientation gives better results from electrical and thermal point of view. Our simulation results demonstrate that one can obtain the lowest current degradation with (110) wafer orientation. The temperature of the hot-spot is the smallest for (110)-orientation as well.

Original languageEnglish (US)
Title of host publicationLecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
Pages103-109
Number of pages7
Volume6046 LNCS
DOIs
StatePublished - 2011
Event7th International Conference on Numerical Methods and Applications, NMA 2010 - Borovets, Bulgaria
Duration: Aug 20 2010Aug 24 2010

Publication series

NameLecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
Volume6046 LNCS
ISSN (Print)03029743
ISSN (Electronic)16113349

Other

Other7th International Conference on Numerical Methods and Applications, NMA 2010
CountryBulgaria
CityBorovets
Period8/20/108/24/10

Fingerprint

Thermal Effects
Thermal effects
Arbitrary
Modeling
Simulators
Hot Spot
Heating
Degradation
Wafer
Lowest
Simulator
Continue
Temperature
Demonstrate
Hot Temperature
Simulation

Keywords

  • crystallographic orientation
  • nano-scale FD-SOI devices
  • particle-based device simulations
  • self-heating effects

ASJC Scopus subject areas

  • Computer Science(all)
  • Theoretical Computer Science

Cite this

Raleva, K., Vasileska, D., & Goodnick, S. (2011). Modeling thermal effects in fully-depleted SOI devices with arbitrary crystallographic orientation. In Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics) (Vol. 6046 LNCS, pp. 103-109). (Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics); Vol. 6046 LNCS). https://doi.org/10.1007/978-3-642-18466-6_11

Modeling thermal effects in fully-depleted SOI devices with arbitrary crystallographic orientation. / Raleva, K.; Vasileska, Dragica; Goodnick, Stephen.

Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics). Vol. 6046 LNCS 2011. p. 103-109 (Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics); Vol. 6046 LNCS).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Raleva, K, Vasileska, D & Goodnick, S 2011, Modeling thermal effects in fully-depleted SOI devices with arbitrary crystallographic orientation. in Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics). vol. 6046 LNCS, Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics), vol. 6046 LNCS, pp. 103-109, 7th International Conference on Numerical Methods and Applications, NMA 2010, Borovets, Bulgaria, 8/20/10. https://doi.org/10.1007/978-3-642-18466-6_11
Raleva K, Vasileska D, Goodnick S. Modeling thermal effects in fully-depleted SOI devices with arbitrary crystallographic orientation. In Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics). Vol. 6046 LNCS. 2011. p. 103-109. (Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)). https://doi.org/10.1007/978-3-642-18466-6_11
Raleva, K. ; Vasileska, Dragica ; Goodnick, Stephen. / Modeling thermal effects in fully-depleted SOI devices with arbitrary crystallographic orientation. Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics). Vol. 6046 LNCS 2011. pp. 103-109 (Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)).
@inproceedings{e14129b629f64ded8bbfa6dd34f36421,
title = "Modeling thermal effects in fully-depleted SOI devices with arbitrary crystallographic orientation",
abstract = "In this work we continue our investigation on the heating effects in nano-scale FD-SOI devices using an in-house thermal particle-based device simulator. We focus on the current variations for FD-SOI devices with arbitrary crystallographic orientation and examine which crystallographic orientation gives better results from electrical and thermal point of view. Our simulation results demonstrate that one can obtain the lowest current degradation with (110) wafer orientation. The temperature of the hot-spot is the smallest for (110)-orientation as well.",
keywords = "crystallographic orientation, nano-scale FD-SOI devices, particle-based device simulations, self-heating effects",
author = "K. Raleva and Dragica Vasileska and Stephen Goodnick",
year = "2011",
doi = "10.1007/978-3-642-18466-6_11",
language = "English (US)",
isbn = "9783642184659",
volume = "6046 LNCS",
series = "Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)",
pages = "103--109",
booktitle = "Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)",

}

TY - GEN

T1 - Modeling thermal effects in fully-depleted SOI devices with arbitrary crystallographic orientation

AU - Raleva, K.

AU - Vasileska, Dragica

AU - Goodnick, Stephen

PY - 2011

Y1 - 2011

N2 - In this work we continue our investigation on the heating effects in nano-scale FD-SOI devices using an in-house thermal particle-based device simulator. We focus on the current variations for FD-SOI devices with arbitrary crystallographic orientation and examine which crystallographic orientation gives better results from electrical and thermal point of view. Our simulation results demonstrate that one can obtain the lowest current degradation with (110) wafer orientation. The temperature of the hot-spot is the smallest for (110)-orientation as well.

AB - In this work we continue our investigation on the heating effects in nano-scale FD-SOI devices using an in-house thermal particle-based device simulator. We focus on the current variations for FD-SOI devices with arbitrary crystallographic orientation and examine which crystallographic orientation gives better results from electrical and thermal point of view. Our simulation results demonstrate that one can obtain the lowest current degradation with (110) wafer orientation. The temperature of the hot-spot is the smallest for (110)-orientation as well.

KW - crystallographic orientation

KW - nano-scale FD-SOI devices

KW - particle-based device simulations

KW - self-heating effects

UR - http://www.scopus.com/inward/record.url?scp=79951987500&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79951987500&partnerID=8YFLogxK

U2 - 10.1007/978-3-642-18466-6_11

DO - 10.1007/978-3-642-18466-6_11

M3 - Conference contribution

SN - 9783642184659

VL - 6046 LNCS

T3 - Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)

SP - 103

EP - 109

BT - Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)

ER -