Modeling the switching dynamics of Programmable-Metallization-Cell (PMC) memory and its application as synapse device for a neuromorphic computation system

Shimeng Yu, H. S.Philip Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

33 Scopus citations

Abstract

A physical model is developed to investigate the switching dynamics of programmable-metallization-cell (PMC) memory. Both "quasi-DC" and time-dependent transient characteristics of PMC are captured by this model in good agreement with the experimental data from Cu/SiO2 and Ag/Ge 0.3Se0.7 cells. For the first time, the time-dependent switching process of PMC is quantified, thus paving the way for a compact SPICE model for circuit simulation. This model reveals that experimentally measured switching parameters such as threshold voltage and cell resistance are dynamic quantities that depend on the programming pulse shape and not the pulse amplitude alone. Using this model, we show that the PMC has the potential to emulate the function of a biological synapse and exhibit the spike-timing-dependent plasticity (STDP) behavior for emerging neuromorphic computation system designs.

Original languageEnglish (US)
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages22.1.1-22.1.4
DOIs
StatePublished - Dec 1 2010
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: Dec 6 2010Dec 8 2010

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period12/6/1012/8/10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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