Modeling the switching dynamics of Programmable-Metallization-Cell (PMC) memory and its application as synapse device for a neuromorphic computation system

Shimeng Yu, H. S Philip Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

30 Citations (Scopus)

Abstract

A physical model is developed to investigate the switching dynamics of programmable-metallization-cell (PMC) memory. Both "quasi-DC" and time-dependent transient characteristics of PMC are captured by this model in good agreement with the experimental data from Cu/SiO2 and Ag/Ge 0.3Se0.7 cells. For the first time, the time-dependent switching process of PMC is quantified, thus paving the way for a compact SPICE model for circuit simulation. This model reveals that experimentally measured switching parameters such as threshold voltage and cell resistance are dynamic quantities that depend on the programming pulse shape and not the pulse amplitude alone. Using this model, we show that the PMC has the potential to emulate the function of a biological synapse and exhibit the spike-timing-dependent plasticity (STDP) behavior for emerging neuromorphic computation system designs.

Original languageEnglish (US)
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
StatePublished - 2010
Externally publishedYes
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: Dec 6 2010Dec 8 2010

Other

Other2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period12/6/1012/8/10

Fingerprint

synapses
Metallizing
Data storage equipment
cells
Circuit simulation
SPICE
Threshold voltage
Plasticity
pulse amplitude
programming
spikes
plastic properties
systems engineering
threshold voltage
Systems analysis
emerging
direct current
time measurement
pulses

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Modeling the switching dynamics of Programmable-Metallization-Cell (PMC) memory and its application as synapse device for a neuromorphic computation system. / Yu, Shimeng; Wong, H. S Philip.

Technical Digest - International Electron Devices Meeting, IEDM. 2010. 5703410.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yu, S & Wong, HSP 2010, Modeling the switching dynamics of Programmable-Metallization-Cell (PMC) memory and its application as synapse device for a neuromorphic computation system. in Technical Digest - International Electron Devices Meeting, IEDM., 5703410, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 12/6/10. https://doi.org/10.1109/IEDM.2010.5703410
Yu, Shimeng ; Wong, H. S Philip. / Modeling the switching dynamics of Programmable-Metallization-Cell (PMC) memory and its application as synapse device for a neuromorphic computation system. Technical Digest - International Electron Devices Meeting, IEDM. 2010.
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