Modeling the radiation response of fully-depleted SOI n-channel MOSFETs

I. S. Esqueda, Hugh Barnaby, M. L. McLain, P. C. Adell, F. E. Mamouni, S. K. Dixit, R. D. Schrimpf, W. Xiong

Research output: Contribution to journalArticle

22 Scopus citations

Abstract

A continuous analytical model for radiation-induced degradation in fully-depleted (FD) silicon on insulator (SOI) n-channel MOSFETs is presented. The combined effects of defect buildup in the buried oxide and band-to-band tunneling (BBT) have been shown to be the primary mechanisms that determine the radiation effects on t e electrical characteristics. Closed-form expressions for the front and back-gate surface potential incorporate these effects, thereby enabling accurate modeling of the degraded current voltage characteristics that result from ionizing radiation exposure.

Original languageEnglish (US)
Article number5204687
Pages (from-to)2247-2250
Number of pages4
JournalIEEE Transactions on Nuclear Science
Volume56
Issue number4
DOIs
StatePublished - Aug 1 2009

Keywords

  • Band-to-band tunneling (BBT)
  • Fully-depleted silicon on Insulator (FDSOI)
  • Metal oxide semiconductor field effect transistor (MOSFET)
  • Total ionizing dose (TID)

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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    Esqueda, I. S., Barnaby, H., McLain, M. L., Adell, P. C., Mamouni, F. E., Dixit, S. K., Schrimpf, R. D., & Xiong, W. (2009). Modeling the radiation response of fully-depleted SOI n-channel MOSFETs. IEEE Transactions on Nuclear Science, 56(4), 2247-2250. [5204687]. https://doi.org/10.1109/TNS.2009.2012709