Modeling the radiation response of fully-depleted SOI n-channel MOSFETs

I. S. Esqueda; Hugh Barnaby; M. L. McLain; P. C. Adell; F. E. Mamouni; S. K. Dixit; R. D. Schrimpf; W. Xiong

doi:10.1109/TNS.2009.2012709

Modeling the radiation response of fully-depleted SOI n-channel MOSFETs

I. S. Esqueda, Hugh Barnaby, M. L. McLain, P. C. Adell, F. E. Mamouni, S. K. Dixit, R. D. Schrimpf, W. Xiong

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

A continuous analytical model for radiation-induced degradation in fully-depleted (FD) silicon on insulator (SOI) n-channel MOSFETs is presented. The combined effects of defect buildup in the buried oxide and band-to-band tunneling (BBT) have been shown to be the primary mechanisms that determine the radiation effects on t e electrical characteristics. Closed-form expressions for the front and back-gate surface potential incorporate these effects, thereby enabling accurate modeling of the degraded current voltage characteristics that result from ionizing radiation exposure.

Original language	English (US)
Article number	5204687
Pages (from-to)	2247-2250
Number of pages	4
Journal	IEEE Transactions on Nuclear Science
Volume	56
Issue number	4
DOIs	https://doi.org/10.1109/TNS.2009.2012709
State	Published - Aug 2009

Keywords

Band-to-band tunneling (BBT)
Fully-depleted silicon on Insulator (FDSOI)
Metal oxide semiconductor field effect transistor (MOSFET)
Total ionizing dose (TID)

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2009.2012709

Cite this

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title = "Modeling the radiation response of fully-depleted SOI n-channel MOSFETs",

abstract = "A continuous analytical model for radiation-induced degradation in fully-depleted (FD) silicon on insulator (SOI) n-channel MOSFETs is presented. The combined effects of defect buildup in the buried oxide and band-to-band tunneling (BBT) have been shown to be the primary mechanisms that determine the radiation effects on t e electrical characteristics. Closed-form expressions for the front and back-gate surface potential incorporate these effects, thereby enabling accurate modeling of the degraded current voltage characteristics that result from ionizing radiation exposure.",

keywords = "Band-to-band tunneling (BBT), Fully-depleted silicon on Insulator (FDSOI), Metal oxide semiconductor field effect transistor (MOSFET), Total ionizing dose (TID)",

author = "Esqueda, {I. S.} and Hugh Barnaby and McLain, {M. L.} and Adell, {P. C.} and Mamouni, {F. E.} and Dixit, {S. K.} and Schrimpf, {R. D.} and W. Xiong",

note = "Funding Information: ACKNOWLEDGMENT The authors would like to thank K. LaBel of NASA and K. Reinhardt of AFOSR for their support of this research.",

year = "2009",

month = aug,

doi = "10.1109/TNS.2009.2012709",

language = "English (US)",

volume = "56",

pages = "2247--2250",

journal = "IEEE Transactions on Nuclear Science",

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AU - Esqueda, I. S.

AU - Barnaby, Hugh

AU - McLain, M. L.

AU - Adell, P. C.

AU - Mamouni, F. E.

AU - Dixit, S. K.

AU - Schrimpf, R. D.

AU - Xiong, W.

N1 - Funding Information: ACKNOWLEDGMENT The authors would like to thank K. LaBel of NASA and K. Reinhardt of AFOSR for their support of this research.

PY - 2009/8

Y1 - 2009/8

N2 - A continuous analytical model for radiation-induced degradation in fully-depleted (FD) silicon on insulator (SOI) n-channel MOSFETs is presented. The combined effects of defect buildup in the buried oxide and band-to-band tunneling (BBT) have been shown to be the primary mechanisms that determine the radiation effects on t e electrical characteristics. Closed-form expressions for the front and back-gate surface potential incorporate these effects, thereby enabling accurate modeling of the degraded current voltage characteristics that result from ionizing radiation exposure.

AB - A continuous analytical model for radiation-induced degradation in fully-depleted (FD) silicon on insulator (SOI) n-channel MOSFETs is presented. The combined effects of defect buildup in the buried oxide and band-to-band tunneling (BBT) have been shown to be the primary mechanisms that determine the radiation effects on t e electrical characteristics. Closed-form expressions for the front and back-gate surface potential incorporate these effects, thereby enabling accurate modeling of the degraded current voltage characteristics that result from ionizing radiation exposure.

KW - Band-to-band tunneling (BBT)

KW - Fully-depleted silicon on Insulator (FDSOI)

KW - Metal oxide semiconductor field effect transistor (MOSFET)

KW - Total ionizing dose (TID)

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Modeling the radiation response of fully-depleted SOI n-channel MOSFETs

Abstract

Keywords

ASJC Scopus subject areas

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