Abstract

The incorporation of total ionizing dose (TID) effects into surface-potential-based compact models requires calculating the dependence of surface potential (ψs) on radiation-induced defect densities. This dependence is obtained through the introduction of the oxide trapped charge (N ot) and the interface trap (N it) areal densities into the surface potential equation (SPE). In this work we present an approach for introducing a non-uniform energy distribution of interface traps into calculations of ψ s. The approach is verified experimentally through comparisons with capacitance vs. voltage (C-V) characteristics of metal-oxide-semiconductor (MOS) capacitors exposed to ionizing radiation.

Original languageEnglish (US)
Article number6164293
Pages (from-to)723-727
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume59
Issue number4 PART 1
DOIs
StatePublished - Mar 12 2012

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Keywords

  • Compact model
  • interface traps
  • metal-oxide-semiconductor (MOS)
  • surface potential
  • total ionizing dose (TID)

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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