Abstract

The incorporation of total ionizing dose (TID) effects into surface-potential-based compact models requires calculating the dependence of surface potential (ψ s) on radiation-induced defect densities. This dependence is obtained through the introduction of the oxide trapped charge (N ot) and the interface trap (N it) areal densities into the surface potential equation (SPE). In this work we present an approach for introducing a non-uniform energy distribution of interface traps into calculations of ψ s. The approach is verified experimentally through comparisons with capacitance vs. voltage (C-V) characteristics of metal-oxide-semiconductor (MOS) capacitors exposed to ionizing radiation.

Original languageEnglish (US)
Title of host publicationProceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS
Pages15-19
Number of pages5
DOIs
StatePublished - 2011
Event12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011 - Sevilla, Spain
Duration: Sep 19 2011Sep 23 2011

Other

Other12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011
CountrySpain
CitySevilla
Period9/19/119/23/11

Fingerprint

Surface potential
traps
Defect density
Ionizing radiation
metal oxide semiconductors
ionizing radiation
capacitors
energy distribution
Capacitors
Capacitance
capacitance
Radiation
dosage
Oxides
oxides
defects
Electric potential
electric potential
radiation
Metals

Keywords

  • compact model
  • interface traps
  • metal-oxide-semiconductor (MOS)
  • surface potential
  • Total ionizing dose (TID)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation

Cite this

Esqueda, I. S., & Barnaby, H. (2011). Modeling the non-uniform distribution of interface traps. In Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS (pp. 15-19). [6131293] https://doi.org/10.1109/RADECS.2011.6131293

Modeling the non-uniform distribution of interface traps. / Esqueda, Ivan S.; Barnaby, Hugh.

Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS. 2011. p. 15-19 6131293.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Esqueda, IS & Barnaby, H 2011, Modeling the non-uniform distribution of interface traps. in Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS., 6131293, pp. 15-19, 12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011, Sevilla, Spain, 9/19/11. https://doi.org/10.1109/RADECS.2011.6131293
Esqueda IS, Barnaby H. Modeling the non-uniform distribution of interface traps. In Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS. 2011. p. 15-19. 6131293 https://doi.org/10.1109/RADECS.2011.6131293
Esqueda, Ivan S. ; Barnaby, Hugh. / Modeling the non-uniform distribution of interface traps. Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS. 2011. pp. 15-19
@inproceedings{834c31aea6404920adb8a4a0d9212599,
title = "Modeling the non-uniform distribution of interface traps",
abstract = "The incorporation of total ionizing dose (TID) effects into surface-potential-based compact models requires calculating the dependence of surface potential (ψ s) on radiation-induced defect densities. This dependence is obtained through the introduction of the oxide trapped charge (N ot) and the interface trap (N it) areal densities into the surface potential equation (SPE). In this work we present an approach for introducing a non-uniform energy distribution of interface traps into calculations of ψ s. The approach is verified experimentally through comparisons with capacitance vs. voltage (C-V) characteristics of metal-oxide-semiconductor (MOS) capacitors exposed to ionizing radiation.",
keywords = "compact model, interface traps, metal-oxide-semiconductor (MOS), surface potential, Total ionizing dose (TID)",
author = "Esqueda, {Ivan S.} and Hugh Barnaby",
year = "2011",
doi = "10.1109/RADECS.2011.6131293",
language = "English (US)",
isbn = "9781457705878",
pages = "15--19",
booktitle = "Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS",

}

TY - GEN

T1 - Modeling the non-uniform distribution of interface traps

AU - Esqueda, Ivan S.

AU - Barnaby, Hugh

PY - 2011

Y1 - 2011

N2 - The incorporation of total ionizing dose (TID) effects into surface-potential-based compact models requires calculating the dependence of surface potential (ψ s) on radiation-induced defect densities. This dependence is obtained through the introduction of the oxide trapped charge (N ot) and the interface trap (N it) areal densities into the surface potential equation (SPE). In this work we present an approach for introducing a non-uniform energy distribution of interface traps into calculations of ψ s. The approach is verified experimentally through comparisons with capacitance vs. voltage (C-V) characteristics of metal-oxide-semiconductor (MOS) capacitors exposed to ionizing radiation.

AB - The incorporation of total ionizing dose (TID) effects into surface-potential-based compact models requires calculating the dependence of surface potential (ψ s) on radiation-induced defect densities. This dependence is obtained through the introduction of the oxide trapped charge (N ot) and the interface trap (N it) areal densities into the surface potential equation (SPE). In this work we present an approach for introducing a non-uniform energy distribution of interface traps into calculations of ψ s. The approach is verified experimentally through comparisons with capacitance vs. voltage (C-V) characteristics of metal-oxide-semiconductor (MOS) capacitors exposed to ionizing radiation.

KW - compact model

KW - interface traps

KW - metal-oxide-semiconductor (MOS)

KW - surface potential

KW - Total ionizing dose (TID)

UR - http://www.scopus.com/inward/record.url?scp=84860201927&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84860201927&partnerID=8YFLogxK

U2 - 10.1109/RADECS.2011.6131293

DO - 10.1109/RADECS.2011.6131293

M3 - Conference contribution

AN - SCOPUS:84860201927

SN - 9781457705878

SP - 15

EP - 19

BT - Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

ER -