Abstract

The incorporation of total ionizing dose (TID) effects into surface-potential-based compact models requires calculating the dependence of surface potential (ψ s) on radiation-induced defect densities. This dependence is obtained through the introduction of the oxide trapped charge (N ot) and the interface trap (N it) areal densities into the surface potential equation (SPE). In this work we present an approach for introducing a non-uniform energy distribution of interface traps into calculations of ψ s. The approach is verified experimentally through comparisons with capacitance vs. voltage (C-V) characteristics of metal-oxide-semiconductor (MOS) capacitors exposed to ionizing radiation.

Original languageEnglish (US)
Title of host publicationRADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings
Pages15-19
Number of pages5
DOIs
StatePublished - Dec 1 2011
Event12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011 - Sevilla, Spain
Duration: Sep 19 2011Sep 23 2011

Publication series

NameProceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Other

Other12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011
CountrySpain
CitySevilla
Period9/19/119/23/11

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Keywords

  • Total ionizing dose (TID)
  • compact model
  • interface traps
  • metal-oxide-semiconductor (MOS)
  • surface potential

ASJC Scopus subject areas

  • Radiation
  • Electrical and Electronic Engineering

Cite this

Esqueda, I. S., & Barnaby, H. (2011). Modeling the non-uniform distribution of interface traps. In RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings (pp. 15-19). [6131293] (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS). https://doi.org/10.1109/RADECS.2011.6131293