Modeling the effects of hydrogen on the mechanisms of dose rate sensitivity

Ivan S. Esqueda, Hugh Barnaby, Philippe C. Adell

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The effects of hydrogen on dose-rate sensitivity are simulated using a one-dimensional (1-D) model that incorporates the physical mechanisms contributing to dose-rate effects in metal-oxide-semiconductor (MOS) structures. Calculations show that molecular hydrogen cracking at positively charged defects may be a key reaction relating hydrogen and dose rate response. Comparison to experimental data on bipolar devices results in good agreement with the dose rate calculations of interface trap buildup.

Original languageEnglish (US)
Title of host publicationRADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings
Pages1-6
Number of pages6
DOIs
StatePublished - Dec 1 2011
Event12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011 - Sevilla, Spain
Duration: Sep 19 2011Sep 23 2011

Publication series

NameProceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Other

Other12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011
CountrySpain
CitySevilla
Period9/19/119/23/11

Keywords

  • Dose rate
  • ELDRS
  • bipolar
  • hydrogen
  • interface traps
  • metal-oxide-semiconductor (MOS)
  • silicon dioxide
  • total ionizing dose (TID)

ASJC Scopus subject areas

  • Radiation
  • Electrical and Electronic Engineering

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