Abstract
The effects of hydrogen on dose-rate sensitivity are simulated using a one-dimensional (1-D) model that incorporates the physical mechanisms contributing to dose-rate effects in the metal-oxide-semiconductor (MOS) system of gated lateral pnp (GLPNP) bipolar transistors. Calculations show that molecular hydrogen cracking at positively charged defects may be a key reaction relating hydrogen and dose rate response. Comparison to experimental data on bipolar devices is in good agreement with the dose rate calculations of interface trap buildup.
Original language | English (US) |
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Article number | 6203624 |
Pages (from-to) | 701-706 |
Number of pages | 6 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 59 |
Issue number | 4 PART 1 |
DOIs | |
State | Published - 2012 |
Keywords
- Bipolar
- ELDRS
- dose rate
- hydrogen
- interface traps
- metal-oxide-semiconductor (MOS)
- silicon dioxide
- total ionizing dose (TID)
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering