Abstract

The effects of hydrogen on dose-rate sensitivity are simulated using a one-dimensional (1-D) model that incorporates the physical mechanisms contributing to dose-rate effects in the metal-oxide-semiconductor (MOS) system of gated lateral pnp (GLPNP) bipolar transistors. Calculations show that molecular hydrogen cracking at positively charged defects may be a key reaction relating hydrogen and dose rate response. Comparison to experimental data on bipolar devices is in good agreement with the dose rate calculations of interface trap buildup.

Original languageEnglish (US)
Article number6203624
Pages (from-to)701-706
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume59
Issue number4 PART 1
DOIs
StatePublished - Aug 30 2012

Keywords

  • Bipolar
  • ELDRS
  • dose rate
  • hydrogen
  • interface traps
  • metal-oxide-semiconductor (MOS)
  • silicon dioxide
  • total ionizing dose (TID)

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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