Modeling the dose rate response and the effects of hydrogen in bipolar technologies

X. Jie Chen; Hugh Barnaby; Philippe Adell; Ronald L. Pease; Bert Vermeire; Keith Holbert

doi:10.1109/TNS.2009.2034154

Modeling the dose rate response and the effects of hydrogen in bipolar technologies

X. Jie Chen, Hugh Barnaby, Philippe Adell, Ronald L. Pease, Bert Vermeire, Keith Holbert

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

A physical model describing the dose rate response and the effect of hydrogen in bipolar technologies is presented. The model uses electron-hole pair recombination and competing hydrogen reactions to explain the behaviors of bipolar devices and circuits at different dose rates. Dose-rate-dependent computer simulations based on the model were performed, and the results provide excellent qualitative agreement with the dose rate data taken on both gated lateral pnp bipolar test transistors and LM193 bipolar dual-voltage comparators. The model presented in this paper can be used to explain a variety of factors that can influence device dose rate response in bipolar technologies.

Original language	English (US)
Article number	5341365
Pages (from-to)	3196-3202
Number of pages	7
Journal	IEEE Transactions on Nuclear Science
Volume	56
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2009.2034154
State	Published - Dec 1 2009

Keywords

Bipolar oxide
Dose rate
Enhanced low dose rate sensitivity (ELDRS)
Hydrogen
Interface traps
Radiation-induced

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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abstract = "A physical model describing the dose rate response and the effect of hydrogen in bipolar technologies is presented. The model uses electron-hole pair recombination and competing hydrogen reactions to explain the behaviors of bipolar devices and circuits at different dose rates. Dose-rate-dependent computer simulations based on the model were performed, and the results provide excellent qualitative agreement with the dose rate data taken on both gated lateral pnp bipolar test transistors and LM193 bipolar dual-voltage comparators. The model presented in this paper can be used to explain a variety of factors that can influence device dose rate response in bipolar technologies.",

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