Modeling the dose rate response and the effects of hydrogen in bipolar technologies

X. Jie Chen, Hugh Barnaby, Philippe Adell, Ronald L. Pease, Bert Vermeire, Keith Holbert

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

A physical model describing the dose rate response and the effect of hydrogen in bipolar technologies is presented. The model uses electron-hole pair recombination and competing hydrogen reactions to explain the behaviors of bipolar devices and circuits at different dose rates. Dose-rate-dependent computer simulations based on the model were performed, and the results provide excellent qualitative agreement with the dose rate data taken on both gated lateral pnp bipolar test transistors and LM193 bipolar dual-voltage comparators. The model presented in this paper can be used to explain a variety of factors that can influence device dose rate response in bipolar technologies.

Original languageEnglish (US)
Article number5341365
Pages (from-to)3196-3202
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume56
Issue number6
DOIs
StatePublished - Dec 1 2009

Keywords

  • Bipolar oxide
  • Dose rate
  • Enhanced low dose rate sensitivity (ELDRS)
  • Hydrogen
  • Interface traps
  • Radiation-induced

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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