@article{e55a11f4c2634a7fa8248f3fb9f14d72,
title = "Modeling the dose rate response and the effects of hydrogen in bipolar technologies",
abstract = "A physical model describing the dose rate response and the effect of hydrogen in bipolar technologies is presented. The model uses electron-hole pair recombination and competing hydrogen reactions to explain the behaviors of bipolar devices and circuits at different dose rates. Dose-rate-dependent computer simulations based on the model were performed, and the results provide excellent qualitative agreement with the dose rate data taken on both gated lateral pnp bipolar test transistors and LM193 bipolar dual-voltage comparators. The model presented in this paper can be used to explain a variety of factors that can influence device dose rate response in bipolar technologies.",
keywords = "Bipolar oxide, Dose rate, Enhanced low dose rate sensitivity (ELDRS), Hydrogen, Interface traps, Radiation-induced",
author = "Chen, {X. Jie} and Hugh Barnaby and Philippe Adell and Pease, {Ronald L.} and Bert Vermeire and Keith Holbert",
note = "Funding Information: Manuscript received July 17, 2009; revised September 07, 2009 and September 30, 2009. Current version published December 09, 2009. This work was supported in part by the Jet Propulsion Laboratory under the NASA Electronics Parts Program (NEPP), the Air Force Office of Scientific Research under the MURI program, and the United States Department of Energy. X. J. Chen is with Radiation Monitoring Devices, Watertown, MA 02472 USA (e-mail: JChen@rmdinc.com). H. J. Barnaby, B. Vermeire, and K. E. Holbert are with Arizona State University, Tempe, AZ 85287 USA. P. Adell is with the Jet Propulsion Laboratory, Pasadena, CA 91109 USA (e-mail: philippe.c.adell@jpl.nasa.gov). R. L. Pease is with RLP Research, Los Lunas, NM 87031 USA (e-mail: rpease@rlpresearch.com). Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TNS.2009.2034154 Fig. 1. Depiction showing a typical dose rate response of a bipolar circuit or device exhibiting ELDRS.",
year = "2009",
month = dec,
doi = "10.1109/TNS.2009.2034154",
language = "English (US)",
volume = "56",
pages = "3196--3202",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",
}