Modeling techniques suitable for CAD-based design of internal matching networks of high-power RF/microwave transistors

Peter H. Aaen, Jaime A. Plá, Constantine Balanis

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

A scalable and accurate simulation technique to be used for the computer-aided design (CAD) of matching networks employed within high-power RF transistors is presented. A novel measurement methodology is developed and utilized during the validation of the proposed analysis approach. Appropriate segmentation techniques were developed, which are consistent with the design approach of the high-power transistor, that take into account the overall complexity of the internal match of most modern RF high-power transistors, while preserving important electromagnetic interactions. By being able to properly decouple the linear portion of the overall packaged transistor model, an objective accuracy assessment via the comparison of measured versus simulated results of the internal matching network was accomplished. The level of accuracy obtained provides credence to the idea of a full CAD-driven design process of the internal match of high-power RF transistors.

Original languageEnglish (US)
Article number1650446
Pages (from-to)3052-3058
Number of pages7
JournalIEEE Transactions on Microwave Theory and Techniques
Volume54
Issue number7
DOIs
StatePublished - Jul 1 2006

Keywords

  • Bonding wires
  • Computer-aided design (CAD) techniques
  • High-power RF transistors
  • MOS capacitors

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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