Abstract
In this paper, a review is presented on the self-heating modeling efforts performed at Arizona State University. In the analysis, first simple SOI Devices are being considered from different technology generations to illustrate what we call Thermal Landauer picture. Namely, it is demonstrated via numerical simulations that in the shortest devices the hot spot does not occur in the channel (as it was speculated in previous works), but occurs in the drain contact due to the largely ballistic nature of the carrier transport. Impact of self-heating effects is also examined in dual-gate devices and silicon nanowire transistors.
| Original language | English (US) |
|---|---|
| Title of host publication | IEEE-NANO 2015 - 15th International Conference on Nanotechnology |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 200-203 |
| Number of pages | 4 |
| ISBN (Print) | 9781467381550 |
| DOIs | |
| State | Published - Jan 20 2016 |
| Event | 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy Duration: Jul 27 2015 → Jul 30 2015 |
Other
| Other | 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 |
|---|---|
| Country/Territory | Italy |
| City | Rome |
| Period | 7/27/15 → 7/30/15 |
Keywords
- Monte Carlo device simulations
- phonons
- self-heating effects
- semiconductor devices
ASJC Scopus subject areas
- Process Chemistry and Technology
- Electrical and Electronic Engineering
- Ceramics and Composites
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films