Abstract

Modern technology has enabled the fabrication of materials with characteristic dimensions of a few nanometers. Examples are superlattices, nanowires and quantum dots. Thermal transport in these lowdimensional nanostructures is important for nextgeneration microelectronic cooling techniques, novel solid-state energy conversion devices, and micronanoscale sensors. Thermal transport caused by lattice vibrations or phonons in nanostructures is very complicated due to the comparable phonon mean-free path, phonon wavelength, and the characteristic size of the nanostructures.

Original languageEnglish (US)
Title of host publication2010 Silicon Nanoelectronics Workshop, SNW 2010
DOIs
StatePublished - 2010
Event2010 15th Silicon Nanoelectronics Workshop, SNW 2010 - Honolulu, HI, United States
Duration: Jun 13 2010Jun 14 2010

Other

Other2010 15th Silicon Nanoelectronics Workshop, SNW 2010
CountryUnited States
CityHonolulu, HI
Period6/13/106/14/10

Fingerprint

Nanowires
Nanostructures
Transistors
Heating
Lattice vibrations
Superlattices
Phonons
Energy conversion
Microelectronics
Semiconductor quantum dots
Cooling
Fabrication
Wavelength
Sensors
Hot Temperature

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Hossain, A., Vasileska, D., Goodnick, S., & Raleva, K. (2010). Modeling self-heating effects in 10nm channel length nanowire transistors. In 2010 Silicon Nanoelectronics Workshop, SNW 2010 [5562566] https://doi.org/10.1109/SNW.2010.5562566

Modeling self-heating effects in 10nm channel length nanowire transistors. / Hossain, A.; Vasileska, Dragica; Goodnick, Stephen; Raleva, Katerina.

2010 Silicon Nanoelectronics Workshop, SNW 2010. 2010. 5562566.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hossain, A, Vasileska, D, Goodnick, S & Raleva, K 2010, Modeling self-heating effects in 10nm channel length nanowire transistors. in 2010 Silicon Nanoelectronics Workshop, SNW 2010., 5562566, 2010 15th Silicon Nanoelectronics Workshop, SNW 2010, Honolulu, HI, United States, 6/13/10. https://doi.org/10.1109/SNW.2010.5562566
Hossain, A. ; Vasileska, Dragica ; Goodnick, Stephen ; Raleva, Katerina. / Modeling self-heating effects in 10nm channel length nanowire transistors. 2010 Silicon Nanoelectronics Workshop, SNW 2010. 2010.
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