TY - GEN
T1 - Modeling self-heating effects in 10nm channel length nanowire transistors
AU - Hossain, A.
AU - Vasileska, Dragica
AU - Goodnick, Stephen
AU - Raleva, Katerina
PY - 2010/10/22
Y1 - 2010/10/22
N2 - Modern technology has enabled the fabrication of materials with characteristic dimensions of a few nanometers. Examples are superlattices, nanowires and quantum dots. Thermal transport in these lowdimensional nanostructures is important for nextgeneration microelectronic cooling techniques, novel solid-state energy conversion devices, and micronanoscale sensors. Thermal transport caused by lattice vibrations or phonons in nanostructures is very complicated due to the comparable phonon mean-free path, phonon wavelength, and the characteristic size of the nanostructures.
AB - Modern technology has enabled the fabrication of materials with characteristic dimensions of a few nanometers. Examples are superlattices, nanowires and quantum dots. Thermal transport in these lowdimensional nanostructures is important for nextgeneration microelectronic cooling techniques, novel solid-state energy conversion devices, and micronanoscale sensors. Thermal transport caused by lattice vibrations or phonons in nanostructures is very complicated due to the comparable phonon mean-free path, phonon wavelength, and the characteristic size of the nanostructures.
UR - http://www.scopus.com/inward/record.url?scp=77958007960&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77958007960&partnerID=8YFLogxK
U2 - 10.1109/SNW.2010.5562566
DO - 10.1109/SNW.2010.5562566
M3 - Conference contribution
AN - SCOPUS:77958007960
SN - 9781424477272
T3 - 2010 Silicon Nanoelectronics Workshop, SNW 2010
BT - 2010 Silicon Nanoelectronics Workshop, SNW 2010
T2 - 2010 15th Silicon Nanoelectronics Workshop, SNW 2010
Y2 - 13 June 2010 through 14 June 2010
ER -