Abstract

III-V nitrides have attracted intense interest recently for applications in high-temperature, high-power electronic devices operating at microwave frequencies. Gallium Nitride (GaN), with a much larger band gap than Gallium Arsenide, has drawn recent interest in industry for use in blue laser diodes and microwave power field-effect transistors. Even though GaN has three times higher effective electron mass than GaAs, which results in a low-field mobility less than that of GaAs, GaN has some distinct advantages in various applications. Some of these are larger band gap, larger peak electron velocity, higher thermal stability; all of which enables it to be a very promising material for high power, high temperature and high frequency applications.

Original languageEnglish (US)
Title of host publication2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOIs
StatePublished - Dec 1 2011
Event2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States
Duration: Dec 7 2011Dec 9 2011

Publication series

Name2011 International Semiconductor Device Research Symposium, ISDRS 2011

Other

Other2011 International Semiconductor Device Research Symposium, ISDRS 2011
CountryUnited States
CityCollege Park, MD
Period12/7/1112/9/11

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Padmanabhan, B., Vasileska, D., & Goodnick, S. (2011). Modeling reliability of GaN/AlGaN/AlN/GaN HEMT. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011 [6135165] (2011 International Semiconductor Device Research Symposium, ISDRS 2011). https://doi.org/10.1109/ISDRS.2011.6135165