Abstract

III-V nitrides have attracted intense interest recently for applications in high-temperature, high-power electronic devices operating at microwave frequencies. Gallium Nitride (GaN), with a much larger band gap than Gallium Arsenide, has drawn recent interest in industry for use in blue laser diodes and microwave power field-effect transistors. Even though GaN has three times higher effective electron mass than GaAs, which results in a low-field mobility less than that of GaAs, GaN has some distinct advantages in various applications. Some of these are larger band gap, larger peak electron velocity, higher thermal stability; all of which enables it to be a very promising material for high power, high temperature and high frequency applications.

Original languageEnglish (US)
Title of host publication2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOIs
StatePublished - 2011
Event2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States
Duration: Dec 7 2011Dec 9 2011

Other

Other2011 International Semiconductor Device Research Symposium, ISDRS 2011
CountryUnited States
CityCollege Park, MD
Period12/7/1112/9/11

Fingerprint

Gallium nitride
High electron mobility transistors
Energy gap
Electrons
Gallium arsenide
Microwave frequencies
Power electronics
Nitrides
Semiconductor lasers
Thermodynamic stability
Microwaves
Temperature
Industry

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Padmanabhan, B., Vasileska, D., & Goodnick, S. (2011). Modeling reliability of GaN/AlGaN/AlN/GaN HEMT. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011 [6135165] https://doi.org/10.1109/ISDRS.2011.6135165

Modeling reliability of GaN/AlGaN/AlN/GaN HEMT. / Padmanabhan, Balaji; Vasileska, Dragica; Goodnick, Stephen.

2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135165.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Padmanabhan, B, Vasileska, D & Goodnick, S 2011, Modeling reliability of GaN/AlGaN/AlN/GaN HEMT. in 2011 International Semiconductor Device Research Symposium, ISDRS 2011., 6135165, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, College Park, MD, United States, 12/7/11. https://doi.org/10.1109/ISDRS.2011.6135165
Padmanabhan B, Vasileska D, Goodnick S. Modeling reliability of GaN/AlGaN/AlN/GaN HEMT. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135165 https://doi.org/10.1109/ISDRS.2011.6135165
Padmanabhan, Balaji ; Vasileska, Dragica ; Goodnick, Stephen. / Modeling reliability of GaN/AlGaN/AlN/GaN HEMT. 2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011.
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