Modeling quantum transport in semiconductor nanostructures

D. K. Ferry, R. Akis, J. P. Bird, D. P. Pivin, N. Holmberg, F. Badrieh, Dragica Vasileska

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

There are a variety of situations in which carriers sit in small 3D quantum boxes containing a small number of electrons per box. In a sense, this range of problems takes us from unintentional quantum dots in MOSFETs (arising from the doping fluctuations) to single-electron quantum dots in semiconductor heterostructures. In between these two extremes are the realm of open quantum dots, in which the transport can be quite regular. These dots are characterized by periodic, oscillatory fluctuations in their magnetoconductance, which replicate the partial density of states in the dot itself. In this paper, we will discuss the modeling of quantum transport through open, ballistic dots through the use of the coupled Schrodinger/Poisson equation, and stabilized mode matching techniques.

Original languageEnglish (US)
Title of host publicationProceedings - 2nd International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures
EditorsMagnus Willander, Irina Khmyrova, Victor Ryzhi
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages54-61
Number of pages8
ISBN (Electronic)0818686820, 9780818686825
DOIs
StatePublished - 1998
Event1998 2nd International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures - Aizu-Wakamatsu, Japan
Duration: Mar 12 1998Mar 13 1998

Publication series

NameProceedings - 2nd International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures
Volume1998-March

Other

Other1998 2nd International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures
Country/TerritoryJapan
CityAizu-Wakamatsu
Period3/12/983/13/98

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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