Modeling quantum transport in semiconductor nanostructures

D. K. Ferry; R. Akis; J. P. Bird; D. P. Pivin; N. Holmberg; F. Badrieh; Dragica Vasileska

doi:10.1109/LDS.1998.714534

Modeling quantum transport in semiconductor nanostructures

D. K. Ferry, R. Akis, J. P. Bird, D. P. Pivin, N. Holmberg, F. Badrieh, Dragica Vasileska

IAFSE-ECEE: Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

There are a variety of situations in which carriers sit in small 3D quantum boxes containing a small number of electrons per box. In a sense, this range of problems takes us from unintentional quantum dots in MOSFETs (arising from the doping fluctuations) to single-electron quantum dots in semiconductor heterostructures. In between these two extremes are the realm of open quantum dots, in which the transport can be quite regular. These dots are characterized by periodic, oscillatory fluctuations in their magnetoconductance, which replicate the partial density of states in the dot itself. In this paper, we will discuss the modeling of quantum transport through open, ballistic dots through the use of the coupled Schrodinger/Poisson equation, and stabilized mode matching techniques.

Original language	English (US)
Title of host publication	Proceedings - 2nd International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures
Editors	Magnus Willander, Irina Khmyrova, Victor Ryzhi
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	54-61
Number of pages	8
ISBN (Electronic)	0818686820, 9780818686825
DOIs	https://doi.org/10.1109/LDS.1998.714534
State	Published - 1998
Event	1998 2nd International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures - Aizu-Wakamatsu, Japan Duration: Mar 12 1998 → Mar 13 1998

Publication series

Name	Proceedings - 2nd International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures
Volume	1998-March

Other

Other	1998 2nd International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures
Country/Territory	Japan
City	Aizu-Wakamatsu
Period	3/12/98 → 3/13/98

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

Access to Document

10.1109/LDS.1998.714534

Cite this

Ferry, D. K., Akis, R., Bird, J. P., Pivin, D. P., Holmberg, N., Badrieh, F., & Vasileska, D. (1998). Modeling quantum transport in semiconductor nanostructures. In M. Willander, I. Khmyrova, & V. Ryzhi (Eds.), Proceedings - 2nd International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (pp. 54-61). [714534] (Proceedings - 2nd International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures; Vol. 1998-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/LDS.1998.714534

Modeling quantum transport in semiconductor nanostructures. / Ferry, D. K.; Akis, R.; Bird, J. P.; Pivin, D. P.; Holmberg, N.; Badrieh, F.; Vasileska, Dragica.

Proceedings - 2nd International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures. ed. / Magnus Willander; Irina Khmyrova; Victor Ryzhi. Institute of Electrical and Electronics Engineers Inc., 1998. p. 54-61 714534 (Proceedings - 2nd International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures; Vol. 1998-March).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ferry, DK, Akis, R, Bird, JP, Pivin, DP, Holmberg, N, Badrieh, F & Vasileska, D 1998, Modeling quantum transport in semiconductor nanostructures. in M Willander, I Khmyrova & V Ryzhi (eds), Proceedings - 2nd International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures., 714534, Proceedings - 2nd International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures, vol. 1998-March, Institute of Electrical and Electronics Engineers Inc., pp. 54-61, 1998 2nd International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures, Aizu-Wakamatsu, Japan, 3/12/98. https://doi.org/10.1109/LDS.1998.714534

Ferry DK, Akis R, Bird JP, Pivin DP, Holmberg N, Badrieh F et al. Modeling quantum transport in semiconductor nanostructures. In Willander M, Khmyrova I, Ryzhi V, editors, Proceedings - 2nd International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures. Institute of Electrical and Electronics Engineers Inc. 1998. p. 54-61. 714534. (Proceedings - 2nd International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures). https://doi.org/10.1109/LDS.1998.714534

Ferry, D. K. ; Akis, R. ; Bird, J. P. ; Pivin, D. P. ; Holmberg, N. ; Badrieh, F. ; Vasileska, Dragica. / Modeling quantum transport in semiconductor nanostructures. Proceedings - 2nd International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures. editor / Magnus Willander ; Irina Khmyrova ; Victor Ryzhi. Institute of Electrical and Electronics Engineers Inc., 1998. pp. 54-61 (Proceedings - 2nd International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures).

@inproceedings{1ebbbba3616e406e8dee1f0002b6a886,

title = "Modeling quantum transport in semiconductor nanostructures",

abstract = "There are a variety of situations in which carriers sit in small 3D quantum boxes containing a small number of electrons per box. In a sense, this range of problems takes us from unintentional quantum dots in MOSFETs (arising from the doping fluctuations) to single-electron quantum dots in semiconductor heterostructures. In between these two extremes are the realm of open quantum dots, in which the transport can be quite regular. These dots are characterized by periodic, oscillatory fluctuations in their magnetoconductance, which replicate the partial density of states in the dot itself. In this paper, we will discuss the modeling of quantum transport through open, ballistic dots through the use of the coupled Schrodinger/Poisson equation, and stabilized mode matching techniques.",

author = "Ferry, {D. K.} and R. Akis and Bird, {J. P.} and Pivin, {D. P.} and N. Holmberg and F. Badrieh and Dragica Vasileska",

note = "Publisher Copyright: {\textcopyright} 1998 IEEE.; 1998 2nd International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures ; Conference date: 12-03-1998 Through 13-03-1998",

year = "1998",

doi = "10.1109/LDS.1998.714534",

language = "English (US)",

series = "Proceedings - 2nd International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "54--61",

editor = "Magnus Willander and Irina Khmyrova and Victor Ryzhi",

booktitle = "Proceedings - 2nd International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures",

}

TY - GEN

T1 - Modeling quantum transport in semiconductor nanostructures

AU - Ferry, D. K.

AU - Akis, R.

AU - Bird, J. P.

AU - Pivin, D. P.

AU - Holmberg, N.

AU - Badrieh, F.

AU - Vasileska, Dragica

PY - 1998

Y1 - 1998

N2 - There are a variety of situations in which carriers sit in small 3D quantum boxes containing a small number of electrons per box. In a sense, this range of problems takes us from unintentional quantum dots in MOSFETs (arising from the doping fluctuations) to single-electron quantum dots in semiconductor heterostructures. In between these two extremes are the realm of open quantum dots, in which the transport can be quite regular. These dots are characterized by periodic, oscillatory fluctuations in their magnetoconductance, which replicate the partial density of states in the dot itself. In this paper, we will discuss the modeling of quantum transport through open, ballistic dots through the use of the coupled Schrodinger/Poisson equation, and stabilized mode matching techniques.

AB - There are a variety of situations in which carriers sit in small 3D quantum boxes containing a small number of electrons per box. In a sense, this range of problems takes us from unintentional quantum dots in MOSFETs (arising from the doping fluctuations) to single-electron quantum dots in semiconductor heterostructures. In between these two extremes are the realm of open quantum dots, in which the transport can be quite regular. These dots are characterized by periodic, oscillatory fluctuations in their magnetoconductance, which replicate the partial density of states in the dot itself. In this paper, we will discuss the modeling of quantum transport through open, ballistic dots through the use of the coupled Schrodinger/Poisson equation, and stabilized mode matching techniques.

UR - http://www.scopus.com/inward/record.url?scp=33750178509&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750178509&partnerID=8YFLogxK

U2 - 10.1109/LDS.1998.714534

DO - 10.1109/LDS.1998.714534

M3 - Conference contribution

AN - SCOPUS:33750178509

T3 - Proceedings - 2nd International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures

SP - 54

EP - 61

BT - Proceedings - 2nd International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures

A2 - Willander, Magnus

A2 - Khmyrova, Irina

A2 - Ryzhi, Victor

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 1998 2nd International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures

Y2 - 12 March 1998 through 13 March 1998

ER -

Modeling quantum transport in semiconductor nanostructures

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