Modeling p-channel SiGe MOSFETs by taking into account the band-structure and the size quantization effects self-consistently

S. Krishnan, Dragica Vasileska, M. V. Fischetti

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

The purpose of this work is to develop new approach to modeling p-channel devices using a 2D Monte Carlo transport kernel that is coupled self-consistently to a 2D Poisson equation solver and to a six-band k.p band-structure module. The need for full band solvers for hole transport is especially true in case of surface channel strained Si and buried channel strained SiGe p-MOSFETs investigated here. We have paid special attention on properly implementing and investigating the role of interface-roughness on the operation of these device structures.

Original languageEnglish (US)
Pages (from-to)435-438
Number of pages4
JournalJournal of Computational Electronics
Volume5
Issue number4
DOIs
StatePublished - Dec 1 2006

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Keywords

  • Band-structure
  • Quantum confinement
  • SiGe p-channel devices
  • Strain

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

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