The ensemble Monte Carlo method, self-consistently coupled with the Poisson Solver, is used to study the high-field electron transport properties in Si and strained Si in short channel MOSFETs. A 0.1 μm gate-length Si and strained-Si n-MOSFET has been investigated and the results show a 50% current enhancement factor in the strained Si channel device.
|Original language||English (US)|
|Number of pages||3|
|Journal||Physica Status Solidi (B) Basic Research|
|State||Published - Nov 1997|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics