Modeling of submicron Si1-xGex-based MOSFETs by self-consistent Monte Carlo simulation

G. F. Formicone, Dragica Vasileska, D. K. Ferry

Research output: Contribution to journalArticle

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Abstract

The ensemble Monte Carlo method, self-consistently coupled with the Poisson Solver, is used to study the high-field electron transport properties in Si and strained Si in short channel MOSFETs. A 0.1 μm gate-length Si and strained-Si n-MOSFET has been investigated and the results show a 50% current enhancement factor in the strained Si channel device.

Original languageEnglish (US)
Pages (from-to)531-533
Number of pages3
JournalPhysica Status Solidi (B) Basic Research
Volume204
Issue number1
DOIs
StatePublished - Nov 1997

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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