Modeling of submicron Si1-xGex-based MOSFETs by self-consistent Monte Carlo simulation

G. F. Formicone; Dragica Vasileska; D. K. Ferry

doi:10.1002/1521-3951(199711)204:1<531::AID-PSSB531>3.0.CO;2-6

Modeling of submicron Si₁-_xGe_x-based MOSFETs by self-consistent Monte Carlo simulation

G. F. Formicone, Dragica Vasileska, D. K. Ferry

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The ensemble Monte Carlo method, self-consistently coupled with the Poisson Solver, is used to study the high-field electron transport properties in Si and strained Si in short channel MOSFETs. A 0.1 μm gate-length Si and strained-Si n-MOSFET has been investigated and the results show a 50% current enhancement factor in the strained Si channel device.

Original language	English (US)
Pages (from-to)	531-533
Number of pages	3
Journal	Physica Status Solidi (B) Basic Research
Volume	204
Issue number	1
DOIs	https://doi.org/10.1002/1521-3951(199711)204:1<531::AID-PSSB531>3.0.CO;2-6
State	Published - Nov 1997

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/1521-3951(199711)204:1<531::AID-PSSB531>3.0.CO;2-6

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title = "Modeling of submicron Si1-xGex-based MOSFETs by self-consistent Monte Carlo simulation",

abstract = "The ensemble Monte Carlo method, self-consistently coupled with the Poisson Solver, is used to study the high-field electron transport properties in Si and strained Si in short channel MOSFETs. A 0.1 μm gate-length Si and strained-Si n-MOSFET has been investigated and the results show a 50% current enhancement factor in the strained Si channel device.",

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AU - Formicone, G. F.

AU - Vasileska, Dragica

AU - Ferry, D. K.

PY - 1997/11

Y1 - 1997/11

N2 - The ensemble Monte Carlo method, self-consistently coupled with the Poisson Solver, is used to study the high-field electron transport properties in Si and strained Si in short channel MOSFETs. A 0.1 μm gate-length Si and strained-Si n-MOSFET has been investigated and the results show a 50% current enhancement factor in the strained Si channel device.

AB - The ensemble Monte Carlo method, self-consistently coupled with the Poisson Solver, is used to study the high-field electron transport properties in Si and strained Si in short channel MOSFETs. A 0.1 μm gate-length Si and strained-Si n-MOSFET has been investigated and the results show a 50% current enhancement factor in the strained Si channel device.

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Modeling of submicron Si₁-_xGe_x-based MOSFETs by self-consistent Monte Carlo simulation

Abstract

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