Modeling of silicon heterojunction solar cells

Pietro Luppina; Paolo Lugli; Stephen Goodnick

doi:10.1109/PVSC.2015.7356049

Modeling of silicon heterojunction solar cells

Pietro Luppina, Paolo Lugli, Stephen Goodnick

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

Here we present modeling results on crystalline Si (c-Si)/amorphous Si (a-Si) heterojunction solar cells using a physical simulation which includes various models for the defect states in the a-Si barriers, as well as explicit models for the ITO emitter contact. We investigate the impact of the band offsets and barrier heights of the a-Si/c-Si interface, particularly in terms of the open circuit voltage. It is also shown that the solar cell performance is sensitively dependent on the quality of the a-Si in terms of defect states and their distribution, particularly on the emitter side. Finally, we analyze the role of tunneling and thermionic emission across the heterointerface in terms of transport from the Si to the ITO contact layer.

Original language	English (US)
Title of host publication	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781479979448
DOIs	https://doi.org/10.1109/PVSC.2015.7356049
State	Published - Dec 14 2015
Externally published	Yes
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: Jun 14 2015 → Jun 19 2015

Other

Other	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/Territory	United States
City	New Orleans
Period	6/14/15 → 6/19/15

Keywords

a-Si/c-Si heteostructures
amorphous silicon
crystalline silicon
Heterojunction
silicon solar cells

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2015.7356049

Cite this

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title = "Modeling of silicon heterojunction solar cells",

abstract = "Here we present modeling results on crystalline Si (c-Si)/amorphous Si (a-Si) heterojunction solar cells using a physical simulation which includes various models for the defect states in the a-Si barriers, as well as explicit models for the ITO emitter contact. We investigate the impact of the band offsets and barrier heights of the a-Si/c-Si interface, particularly in terms of the open circuit voltage. It is also shown that the solar cell performance is sensitively dependent on the quality of the a-Si in terms of defect states and their distribution, particularly on the emitter side. Finally, we analyze the role of tunneling and thermionic emission across the heterointerface in terms of transport from the Si to the ITO contact layer.",

keywords = "a-Si/c-Si heteostructures, amorphous silicon, crystalline silicon, Heterojunction, silicon solar cells",

author = "Pietro Luppina and Paolo Lugli and Stephen Goodnick",

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T1 - Modeling of silicon heterojunction solar cells

AU - Luppina, Pietro

AU - Lugli, Paolo

AU - Goodnick, Stephen

PY - 2015/12/14

Y1 - 2015/12/14

N2 - Here we present modeling results on crystalline Si (c-Si)/amorphous Si (a-Si) heterojunction solar cells using a physical simulation which includes various models for the defect states in the a-Si barriers, as well as explicit models for the ITO emitter contact. We investigate the impact of the band offsets and barrier heights of the a-Si/c-Si interface, particularly in terms of the open circuit voltage. It is also shown that the solar cell performance is sensitively dependent on the quality of the a-Si in terms of defect states and their distribution, particularly on the emitter side. Finally, we analyze the role of tunneling and thermionic emission across the heterointerface in terms of transport from the Si to the ITO contact layer.

AB - Here we present modeling results on crystalline Si (c-Si)/amorphous Si (a-Si) heterojunction solar cells using a physical simulation which includes various models for the defect states in the a-Si barriers, as well as explicit models for the ITO emitter contact. We investigate the impact of the band offsets and barrier heights of the a-Si/c-Si interface, particularly in terms of the open circuit voltage. It is also shown that the solar cell performance is sensitively dependent on the quality of the a-Si in terms of defect states and their distribution, particularly on the emitter side. Finally, we analyze the role of tunneling and thermionic emission across the heterointerface in terms of transport from the Si to the ITO contact layer.

KW - a-Si/c-Si heteostructures

KW - amorphous silicon

KW - crystalline silicon

KW - Heterojunction

KW - silicon solar cells

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ER -

Modeling of silicon heterojunction solar cells

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Keywords

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