Modeling of silicon heterojunction solar cells

Pietro Luppina, Paolo Lugli, Stephen Goodnick

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Here we present modeling results on crystalline Si (c-Si)/amorphous Si (a-Si) heterojunction solar cells using a physical simulation which includes various models for the defect states in the a-Si barriers, as well as explicit models for the ITO emitter contact. We investigate the impact of the band offsets and barrier heights of the a-Si/c-Si interface, particularly in terms of the open circuit voltage. It is also shown that the solar cell performance is sensitively dependent on the quality of the a-Si in terms of defect states and their distribution, particularly on the emitter side. Finally, we analyze the role of tunneling and thermionic emission across the heterointerface in terms of transport from the Si to the ITO contact layer.

Original languageEnglish (US)
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479979448
DOIs
StatePublished - Dec 14 2015
Externally publishedYes
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: Jun 14 2015Jun 19 2015

Other

Other42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
CountryUnited States
CityNew Orleans
Period6/14/156/19/15

Keywords

  • a-Si/c-Si heteostructures
  • amorphous silicon
  • crystalline silicon
  • Heterojunction
  • silicon solar cells

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Modeling of silicon heterojunction solar cells'. Together they form a unique fingerprint.

  • Cite this

    Luppina, P., Lugli, P., & Goodnick, S. (2015). Modeling of silicon heterojunction solar cells. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 [7356049] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7356049