Modeling of SiGe devices using a self-consistent full-band device simulator which properly takes into account quantum-mechanical size quantization and mobility enhancement

We examine performance enhancement off-channel SiGe devices using our recently developed particle-based device simulator that takes into account self-consistently the bandstructure and the quantum mechanical space-quantization and mobility enhancement (due to the smaller 2D density of states function) effects, We find surface roughness to be the dominant factor for the bad performance of p-channel SiGe devices when compared to conventional bulk p-MOSFETs at high bias conditions, At low and moderate bias conditions, when surface-roughness does not dominate the carrier transport, we observe performance enhancement in the operation of f-channel SiGe MOSFETs versus their conventional counter-parts. copyright The Electrochemical Society.