Modeling of narrow-width SOI devices: The impact of quantum mechanical size quantization effects and unintentional doping on device operation

Shaikh S. Ahmed, Dragica Vasileska

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The influence of quantum mechanical size quantization effects and unintentional doping on narrow-width silicon on insulator (SOI) device structure, was investigated using computer simulation. The effective potential approach was used, and it was incorporated into the existing 3D Monte Carlo particle-based simulator. It was found that due to the size-quantization effect, a dopant ion trapped in the center of the channel produced the maximum fluctuations. Single impurity at the source end of the channel affected the drain current most, and produced the maximum shift in the threshold voltage. The largest effect was found in the subthreshold/weak-inversion regime where the density of the mobile carriers was very low.

Original languageEnglish (US)
Title of host publicationDevice Research Conference - Conference Digest, 62nd DRC
Pages117-118
Number of pages2
DOIs
StatePublished - Dec 1 2004
EventDevice Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States
Duration: Jun 21 2004Jun 23 2004

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

OtherDevice Research Conference - Conference Digest, 62nd DRC
CountryUnited States
CityNotre Dame, IN
Period6/21/046/23/04

ASJC Scopus subject areas

  • Engineering(all)

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    Ahmed, S. S., & Vasileska, D. (2004). Modeling of narrow-width SOI devices: The impact of quantum mechanical size quantization effects and unintentional doping on device operation. In Device Research Conference - Conference Digest, 62nd DRC (pp. 117-118). [III.-33] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2004.1367811