Modeling of nanoelectronic and quantum devices

D. K. Ferry, R. Akis, M. J. Gilbert, G. Speyer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The semiconductor industry is constantly pushing towards ever smaller devices and it is expected that we will see commercial devices with gate lengths less than 10 nm within the next decade. Such small devices have active regions that are smaller than relevant coherence lengths, so that full quantum modeling will be required. In addition, novel new structures, such as molecules, may represent the active regions in such small devices. Here we outline a fully quantum mechanical approach to the modeling of coherent transport in ballistic structures. Examples of an SOI MOSFET and a molecule are presented.

Original languageEnglish (US)
Title of host publication2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
EditorsM. Laudon, B. Romanowicz
Pages37-40
Number of pages4
StatePublished - Nov 2 2004
Event2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 - Boston, MA, United States
Duration: Mar 7 2004Mar 11 2004

Publication series

Name2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
Volume3

Other

Other2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
CountryUnited States
CityBoston, MA
Period3/7/043/11/04

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Keywords

  • Electron states
  • MOSFETs
  • Molecules
  • Quantum transport
  • Semiconductors

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ferry, D. K., Akis, R., Gilbert, M. J., & Speyer, G. (2004). Modeling of nanoelectronic and quantum devices. In M. Laudon, & B. Romanowicz (Eds.), 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 (pp. 37-40). (2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004; Vol. 3).