Abstract
The semiconductor industry is constantly pushing towards ever smaller devices and it is expected that we will see commercial devices with gate lengths less than 10 nm within the next decade. Such small devices have active regions that are smaller than relevant coherence lengths, so that full quantum modeling will be required. In addition, novel new structures, such as molecules, may represent the active regions in such small devices. Here we outline a fully quantum mechanical approach to the modeling of coherent transport in ballistic structures. Examples of an SOI MOSFET and a molecule are presented.
| Original language | English (US) |
|---|---|
| Title of host publication | 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 |
| Editors | M. Laudon, B. Romanowicz |
| Pages | 37-40 |
| Number of pages | 4 |
| State | Published - Nov 2 2004 |
| Event | 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 - Boston, MA, United States Duration: Mar 7 2004 → Mar 11 2004 |
Publication series
| Name | 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 |
|---|---|
| Volume | 3 |
Other
| Other | 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 |
|---|---|
| Country | United States |
| City | Boston, MA |
| Period | 3/7/04 → 3/11/04 |
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Keywords
- Electron states
- MOSFETs
- Molecules
- Quantum transport
- Semiconductors
ASJC Scopus subject areas
- Engineering(all)
Cite this
Ferry, D. K., Akis, R., Gilbert, M. J., & Speyer, G. (2004). Modeling of nanoelectronic and quantum devices. In M. Laudon, & B. Romanowicz (Eds.), 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 (pp. 37-40). (2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004; Vol. 3).