Abstract
The semiconductor industry is constantly pushing towards ever smaller devices and it is expected that we will see commercial devices with gate lengths less than 10 nm within the next decade. Such small devices have active regions that are smaller than relevant coherence lengths, so that full quantum modeling will be required. In addition, novel new structures, such as molecules, may represent the active regions in such small devices. Here we outline a fully quantum mechanical approach to the modeling of coherent transport in ballistic structures. Examples of an SOI MOSFET and a molecule are presented.
| Original language | English (US) |
|---|---|
| Title of host publication | 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 |
| Editors | M. Laudon, B. Romanowicz |
| Pages | 37-40 |
| Number of pages | 4 |
| Volume | 3 |
| State | Published - 2004 |
| Event | 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 - Boston, MA, United States Duration: Mar 7 2004 → Mar 11 2004 |
Other
| Other | 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 |
|---|---|
| Country | United States |
| City | Boston, MA |
| Period | 3/7/04 → 3/11/04 |
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Keywords
- Electron states
- Molecules
- MOSFETs
- Quantum transport
- Semiconductors
ASJC Scopus subject areas
- Engineering(all)
Cite this
Modeling of nanoelectronic and quantum devices. / Ferry, D. K.; Akis, R.; Gilbert, M. J.; Speyer, G.
2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004. ed. / M. Laudon; B. Romanowicz. Vol. 3 2004. p. 37-40.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Modeling of nanoelectronic and quantum devices
AU - Ferry, D. K.
AU - Akis, R.
AU - Gilbert, M. J.
AU - Speyer, G.
PY - 2004
Y1 - 2004
N2 - The semiconductor industry is constantly pushing towards ever smaller devices and it is expected that we will see commercial devices with gate lengths less than 10 nm within the next decade. Such small devices have active regions that are smaller than relevant coherence lengths, so that full quantum modeling will be required. In addition, novel new structures, such as molecules, may represent the active regions in such small devices. Here we outline a fully quantum mechanical approach to the modeling of coherent transport in ballistic structures. Examples of an SOI MOSFET and a molecule are presented.
AB - The semiconductor industry is constantly pushing towards ever smaller devices and it is expected that we will see commercial devices with gate lengths less than 10 nm within the next decade. Such small devices have active regions that are smaller than relevant coherence lengths, so that full quantum modeling will be required. In addition, novel new structures, such as molecules, may represent the active regions in such small devices. Here we outline a fully quantum mechanical approach to the modeling of coherent transport in ballistic structures. Examples of an SOI MOSFET and a molecule are presented.
KW - Electron states
KW - Molecules
KW - MOSFETs
KW - Quantum transport
KW - Semiconductors
UR - http://www.scopus.com/inward/record.url?scp=6344287574&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=6344287574&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:6344287574
SN - 0972842276
SN - 9780972842273
VL - 3
SP - 37
EP - 40
BT - 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
A2 - Laudon, M.
A2 - Romanowicz, B.
ER -