Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors

Ivan Sanchez Esqueda, Hugh Barnaby, Keith Holbert, Farah El-Mamouni, Ronald D. Schrimpf

Research output: Contribution to journalArticle

27 Scopus citations

Abstract

The radiation response of advanced non-planar multiple gate field effect transistors (MuGFETs) has been shown to have a strong dependence on fin width (W). The incorporation of total ionizing dose (TID) effects into a physics-based surface-potential compact model allows for the effects of radiation-induced degradation in MuGFET devices to be modeled in circuit simulators, e.g., SPICE. A set of extracted parameters are used in conjunction with closed-form expressions for the surface potential, thereby enabling accurate modeling of the radiation-response and its dependence on W. Total ionizing dose (TID) experiments and two-dimensional (2D) TCAD simulations are used to validate the compact modeling approach presented in this paper.

Original languageEnglish (US)
Article number5715906
Pages (from-to)499-505
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume58
Issue number2
DOIs
StatePublished - Apr 1 2011

Keywords

  • Compact model
  • FinFETs
  • multiple gate field effect transistors (MuGFETs)
  • silicon-on-insulator (SOI)
  • total ionizing dose (TID)

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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