Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors

Ivan Sanchez Esqueda; Hugh Barnaby; Keith Holbert; Farah El-Mamouni; Ronald D. Schrimpf

doi:10.1109/TNS.2010.2101615

Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors

Ivan Sanchez Esqueda, Hugh Barnaby, Keith Holbert, Farah El-Mamouni, Ronald D. Schrimpf

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

The radiation response of advanced non-planar multiple gate field effect transistors (MuGFETs) has been shown to have a strong dependence on fin width (W). The incorporation of total ionizing dose (TID) effects into a physics-based surface-potential compact model allows for the effects of radiation-induced degradation in MuGFET devices to be modeled in circuit simulators, e.g., SPICE. A set of extracted parameters are used in conjunction with closed-form expressions for the surface potential, thereby enabling accurate modeling of the radiation-response and its dependence on W. Total ionizing dose (TID) experiments and two-dimensional (2D) TCAD simulations are used to validate the compact modeling approach presented in this paper.

Original language	English (US)
Article number	5715906
Pages (from-to)	499-505
Number of pages	7
Journal	IEEE Transactions on Nuclear Science
Volume	58
Issue number	2
DOIs	https://doi.org/10.1109/TNS.2010.2101615
State	Published - Apr 2011

Keywords

Compact model
FinFETs
multiple gate field effect transistors (MuGFETs)
silicon-on-insulator (SOI)
total ionizing dose (TID)

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2010.2101615

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title = "Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors",

abstract = "The radiation response of advanced non-planar multiple gate field effect transistors (MuGFETs) has been shown to have a strong dependence on fin width (W). The incorporation of total ionizing dose (TID) effects into a physics-based surface-potential compact model allows for the effects of radiation-induced degradation in MuGFET devices to be modeled in circuit simulators, e.g., SPICE. A set of extracted parameters are used in conjunction with closed-form expressions for the surface potential, thereby enabling accurate modeling of the radiation-response and its dependence on W. Total ionizing dose (TID) experiments and two-dimensional (2D) TCAD simulations are used to validate the compact modeling approach presented in this paper.",

keywords = "Compact model, FinFETs, multiple gate field effect transistors (MuGFETs), silicon-on-insulator (SOI), total ionizing dose (TID)",

author = "Esqueda, {Ivan Sanchez} and Hugh Barnaby and Keith Holbert and Farah El-Mamouni and Schrimpf, {Ronald D.}",

note = "Funding Information: Manuscript received August 30, 2010; revised November 04, 2010; accepted December 08, 2010. Date of publication February 17, 2011; date of current version April 13, 2011. This work was supported by the NASA Electronics, Parts and Packaging Program (NEPP).",

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AU - Holbert, Keith

AU - El-Mamouni, Farah

AU - Schrimpf, Ronald D.

N1 - Funding Information: Manuscript received August 30, 2010; revised November 04, 2010; accepted December 08, 2010. Date of publication February 17, 2011; date of current version April 13, 2011. This work was supported by the NASA Electronics, Parts and Packaging Program (NEPP).

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N2 - The radiation response of advanced non-planar multiple gate field effect transistors (MuGFETs) has been shown to have a strong dependence on fin width (W). The incorporation of total ionizing dose (TID) effects into a physics-based surface-potential compact model allows for the effects of radiation-induced degradation in MuGFET devices to be modeled in circuit simulators, e.g., SPICE. A set of extracted parameters are used in conjunction with closed-form expressions for the surface potential, thereby enabling accurate modeling of the radiation-response and its dependence on W. Total ionizing dose (TID) experiments and two-dimensional (2D) TCAD simulations are used to validate the compact modeling approach presented in this paper.

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KW - FinFETs

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KW - silicon-on-insulator (SOI)

KW - total ionizing dose (TID)

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Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors

Abstract

Keywords

ASJC Scopus subject areas

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