Abstract

We simulate a type III InAs/GaSb broken gap junction to evaluate its potential as a tunnel junction. The unique properties of broken gap will enhance current transport between the subcells of a multijunction solar cell and reduce the overall series resistance. A drift diffusion simulator has been developed to study the current characteristics of novel heterostructures. The effect all the major recombination mechanisms such as Shockley - Read - Hall, Radiative, and Auger on the current are included. Also, we investigate the effect of degeneracy on the device by considering the effect of band gap narrowing. In our model we also add effects of thermionic emission and band to band tunneling. As solar cells operate at low voltages we have added a model for low field mobility which might be a limiting factor.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages2096-2100
Number of pages5
DOIs
StatePublished - 2012
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: Jun 3 2012Jun 8 2012

Other

Other38th IEEE Photovoltaic Specialists Conference, PVSC 2012
CountryUnited States
CityAustin, TX
Period6/3/126/8/12

Fingerprint

Tunnel junctions
Thermionic emission
Heterojunctions
Solar cells
Energy gap
Simulators
Electric potential
Multi-junction solar cells

Keywords

  • Heterojunctions
  • III - V semiconductor materials
  • Numerical Modeling
  • Tunneling

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Muralidharan, P., Vasileska, D., Allen, C., Li, J. J., & Zhang, Y-H. (2012). Modeling of InAs/GaSb tunnel junction. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 2096-2100). [6318011] https://doi.org/10.1109/PVSC.2012.6318011

Modeling of InAs/GaSb tunnel junction. / Muralidharan, Pradyumna; Vasileska, Dragica; Allen, Charles; Li, J. J.; Zhang, Yong-Hang.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2012. p. 2096-2100 6318011.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Muralidharan, P, Vasileska, D, Allen, C, Li, JJ & Zhang, Y-H 2012, Modeling of InAs/GaSb tunnel junction. in Conference Record of the IEEE Photovoltaic Specialists Conference., 6318011, pp. 2096-2100, 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States, 6/3/12. https://doi.org/10.1109/PVSC.2012.6318011
Muralidharan P, Vasileska D, Allen C, Li JJ, Zhang Y-H. Modeling of InAs/GaSb tunnel junction. In Conference Record of the IEEE Photovoltaic Specialists Conference. 2012. p. 2096-2100. 6318011 https://doi.org/10.1109/PVSC.2012.6318011
Muralidharan, Pradyumna ; Vasileska, Dragica ; Allen, Charles ; Li, J. J. ; Zhang, Yong-Hang. / Modeling of InAs/GaSb tunnel junction. Conference Record of the IEEE Photovoltaic Specialists Conference. 2012. pp. 2096-2100
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