Abstract

We simulate a type III InAs/GaSb broken gap junction to evaluate its potential as a tunnel junction. The unique properties of broken gap will enhance current transport between the subcells of a multijunction solar cell and reduce the overall series resistance. A drift diffusion simulator has been developed to study the current characteristics of novel heterostructures. The effect all the major recombination mechanisms such as Shockley - Read - Hall, Radiative, and Auger on the current are included. Also, we investigate the effect of degeneracy on the device by considering the effect of band gap narrowing. In our model we also add effects of thermionic emission and band to band tunneling. As solar cells operate at low voltages we have added a model for low field mobility which might be a limiting factor.

Original languageEnglish (US)
Title of host publicationProgram - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages2096-2100
Number of pages5
DOIs
StatePublished - Nov 26 2012
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: Jun 3 2012Jun 8 2012

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other38th IEEE Photovoltaic Specialists Conference, PVSC 2012
CountryUnited States
CityAustin, TX
Period6/3/126/8/12

Keywords

  • Heterojunctions
  • III - V semiconductor materials
  • Numerical Modeling
  • Tunneling

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Muralidharan, P., Vasileska, D., Allen, C., Li, J. J., & Zhang, Y-H. (2012). Modeling of InAs/GaSb tunnel junction. In Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012 (pp. 2096-2100). [6318011] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2012.6318011