@inproceedings{80e6e6507338450193b7b3cdd1a637f7,
title = "Modeling of high-current damage in SiGe HBTs under pulsed stress",
abstract = "High-current pulsed stress measurements are performed on SiGe HBTs to characterize the damage behavior and create a comprehensive physics-based TCAD damage model for Auger-induced hot-carrier damage. The Auger hot-carrier generation is decoupled from classical mixed-mode damage and annealing on the output plane by using pulsed stress conditions to modulate the self-heating within the device under stress. The physics of high-current degradation is analyzed, and a temperature dependent degradation model is presented. This model is the first of its kind in both the CMOS and bipolar communities and solves a significant portion of the puzzle for predictive modeling of SiGe HBT safe-operating-area (SOA) and reliability.",
keywords = "Annealing, Auger recombination, avalanche generation, bipolar transistor, degradation, High-Current damage, hot-carrier damage, impact-ionization, mixed-mode stress, reliability, reverse EB stress, SiGe HBT",
author = "Raghunathan, {Uppili S.} and Brian Wier and Martinez, {Rafael Perez} and Fleetwood, {Zachary E.} and Anup Omprakash and Hanbin Ying and Saeed Zeinolabedinzadeh and Cressler, {John D.}",
year = "2016",
month = nov,
day = "8",
doi = "10.1109/BCTM.2016.7738969",
language = "English (US)",
series = "Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "17--20",
booktitle = "2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2016",
note = "2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2016 ; Conference date: 25-09-2016 Through 27-09-2016",
}