Modeling of high-current damage in SiGe HBTs under pulsed stress

Uppili S. Raghunathan, Brian Wier, Rafael Perez Martinez, Zachary E. Fleetwood, Anup Omprakash, Hanbin Ying, Saeed Zeinolabedinzadeh, John D. Cressler

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

High-current pulsed stress measurements are performed on SiGe HBTs to characterize the damage behavior and create a comprehensive physics-based TCAD damage model for Auger-induced hot-carrier damage. The Auger hot-carrier generation is decoupled from classical mixed-mode damage and annealing on the output plane by using pulsed stress conditions to modulate the self-heating within the device under stress. The physics of high-current degradation is analyzed, and a temperature dependent degradation model is presented. This model is the first of its kind in both the CMOS and bipolar communities and solves a significant portion of the puzzle for predictive modeling of SiGe HBT safe-operating-area (SOA) and reliability.

Original languageEnglish (US)
Title of host publication2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages17-20
Number of pages4
ISBN (Electronic)9781509004843
DOIs
StatePublished - Nov 8 2016
Externally publishedYes
Event2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2016 - New Brunswick, United States
Duration: Sep 25 2016Sep 27 2016

Publication series

NameProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Volume2016-November
ISSN (Print)1088-9299

Conference

Conference2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2016
CountryUnited States
CityNew Brunswick
Period9/25/169/27/16

Fingerprint

Heterojunction bipolar transistors
Hot carriers
Physics
Degradation
Stress measurement
Annealing
Heating
Temperature

Keywords

  • Annealing
  • Auger recombination
  • avalanche generation
  • bipolar transistor
  • degradation
  • High-Current damage
  • hot-carrier damage
  • impact-ionization
  • mixed-mode stress
  • reliability
  • reverse EB stress
  • SiGe HBT

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Raghunathan, U. S., Wier, B., Martinez, R. P., Fleetwood, Z. E., Omprakash, A., Ying, H., ... Cressler, J. D. (2016). Modeling of high-current damage in SiGe HBTs under pulsed stress. In 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2016 (pp. 17-20). [7738969] (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/BCTM.2016.7738969

Modeling of high-current damage in SiGe HBTs under pulsed stress. / Raghunathan, Uppili S.; Wier, Brian; Martinez, Rafael Perez; Fleetwood, Zachary E.; Omprakash, Anup; Ying, Hanbin; Zeinolabedinzadeh, Saeed; Cressler, John D.

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 17-20 7738969 (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting; Vol. 2016-November).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Raghunathan, US, Wier, B, Martinez, RP, Fleetwood, ZE, Omprakash, A, Ying, H, Zeinolabedinzadeh, S & Cressler, JD 2016, Modeling of high-current damage in SiGe HBTs under pulsed stress. in 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2016., 7738969, Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, vol. 2016-November, Institute of Electrical and Electronics Engineers Inc., pp. 17-20, 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2016, New Brunswick, United States, 9/25/16. https://doi.org/10.1109/BCTM.2016.7738969
Raghunathan US, Wier B, Martinez RP, Fleetwood ZE, Omprakash A, Ying H et al. Modeling of high-current damage in SiGe HBTs under pulsed stress. In 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 17-20. 7738969. (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). https://doi.org/10.1109/BCTM.2016.7738969
Raghunathan, Uppili S. ; Wier, Brian ; Martinez, Rafael Perez ; Fleetwood, Zachary E. ; Omprakash, Anup ; Ying, Hanbin ; Zeinolabedinzadeh, Saeed ; Cressler, John D. / Modeling of high-current damage in SiGe HBTs under pulsed stress. 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 17-20 (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting).
@inproceedings{80e6e6507338450193b7b3cdd1a637f7,
title = "Modeling of high-current damage in SiGe HBTs under pulsed stress",
abstract = "High-current pulsed stress measurements are performed on SiGe HBTs to characterize the damage behavior and create a comprehensive physics-based TCAD damage model for Auger-induced hot-carrier damage. The Auger hot-carrier generation is decoupled from classical mixed-mode damage and annealing on the output plane by using pulsed stress conditions to modulate the self-heating within the device under stress. The physics of high-current degradation is analyzed, and a temperature dependent degradation model is presented. This model is the first of its kind in both the CMOS and bipolar communities and solves a significant portion of the puzzle for predictive modeling of SiGe HBT safe-operating-area (SOA) and reliability.",
keywords = "Annealing, Auger recombination, avalanche generation, bipolar transistor, degradation, High-Current damage, hot-carrier damage, impact-ionization, mixed-mode stress, reliability, reverse EB stress, SiGe HBT",
author = "Raghunathan, {Uppili S.} and Brian Wier and Martinez, {Rafael Perez} and Fleetwood, {Zachary E.} and Anup Omprakash and Hanbin Ying and Saeed Zeinolabedinzadeh and Cressler, {John D.}",
year = "2016",
month = "11",
day = "8",
doi = "10.1109/BCTM.2016.7738969",
language = "English (US)",
series = "Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "17--20",
booktitle = "2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2016",

}

TY - GEN

T1 - Modeling of high-current damage in SiGe HBTs under pulsed stress

AU - Raghunathan, Uppili S.

AU - Wier, Brian

AU - Martinez, Rafael Perez

AU - Fleetwood, Zachary E.

AU - Omprakash, Anup

AU - Ying, Hanbin

AU - Zeinolabedinzadeh, Saeed

AU - Cressler, John D.

PY - 2016/11/8

Y1 - 2016/11/8

N2 - High-current pulsed stress measurements are performed on SiGe HBTs to characterize the damage behavior and create a comprehensive physics-based TCAD damage model for Auger-induced hot-carrier damage. The Auger hot-carrier generation is decoupled from classical mixed-mode damage and annealing on the output plane by using pulsed stress conditions to modulate the self-heating within the device under stress. The physics of high-current degradation is analyzed, and a temperature dependent degradation model is presented. This model is the first of its kind in both the CMOS and bipolar communities and solves a significant portion of the puzzle for predictive modeling of SiGe HBT safe-operating-area (SOA) and reliability.

AB - High-current pulsed stress measurements are performed on SiGe HBTs to characterize the damage behavior and create a comprehensive physics-based TCAD damage model for Auger-induced hot-carrier damage. The Auger hot-carrier generation is decoupled from classical mixed-mode damage and annealing on the output plane by using pulsed stress conditions to modulate the self-heating within the device under stress. The physics of high-current degradation is analyzed, and a temperature dependent degradation model is presented. This model is the first of its kind in both the CMOS and bipolar communities and solves a significant portion of the puzzle for predictive modeling of SiGe HBT safe-operating-area (SOA) and reliability.

KW - Annealing

KW - Auger recombination

KW - avalanche generation

KW - bipolar transistor

KW - degradation

KW - High-Current damage

KW - hot-carrier damage

KW - impact-ionization

KW - mixed-mode stress

KW - reliability

KW - reverse EB stress

KW - SiGe HBT

UR - http://www.scopus.com/inward/record.url?scp=85001948893&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85001948893&partnerID=8YFLogxK

U2 - 10.1109/BCTM.2016.7738969

DO - 10.1109/BCTM.2016.7738969

M3 - Conference contribution

AN - SCOPUS:85001948893

T3 - Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

SP - 17

EP - 20

BT - 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2016

PB - Institute of Electrical and Electronics Engineers Inc.

ER -