Modeling of high-current damage in SiGe HBTs under pulsed stress

Uppili S. Raghunathan, Brian Wier, Rafael Perez Martinez, Zachary E. Fleetwood, Anup Omprakash, Hanbin Ying, Saeed Zeinolabedinzadeh, John D. Cressler

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

High-current pulsed stress measurements are performed on SiGe HBTs to characterize the damage behavior and create a comprehensive physics-based TCAD damage model for Auger-induced hot-carrier damage. The Auger hot-carrier generation is decoupled from classical mixed-mode damage and annealing on the output plane by using pulsed stress conditions to modulate the self-heating within the device under stress. The physics of high-current degradation is analyzed, and a temperature dependent degradation model is presented. This model is the first of its kind in both the CMOS and bipolar communities and solves a significant portion of the puzzle for predictive modeling of SiGe HBT safe-operating-area (SOA) and reliability.

Original languageEnglish (US)
Title of host publication2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages17-20
Number of pages4
ISBN (Electronic)9781509004843
DOIs
StatePublished - Nov 8 2016
Externally publishedYes
Event2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2016 - New Brunswick, United States
Duration: Sep 25 2016Sep 27 2016

Publication series

NameProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Volume2016-November
ISSN (Print)1088-9299

Conference

Conference2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2016
CountryUnited States
CityNew Brunswick
Period9/25/169/27/16

Keywords

  • Annealing
  • Auger recombination
  • avalanche generation
  • bipolar transistor
  • degradation
  • High-Current damage
  • hot-carrier damage
  • impact-ionization
  • mixed-mode stress
  • reliability
  • reverse EB stress
  • SiGe HBT

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Raghunathan, U. S., Wier, B., Martinez, R. P., Fleetwood, Z. E., Omprakash, A., Ying, H., Zeinolabedinzadeh, S., & Cressler, J. D. (2016). Modeling of high-current damage in SiGe HBTs under pulsed stress. In 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2016 (pp. 17-20). [7738969] (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/BCTM.2016.7738969