Abstract

We have developed a computer program that simulates the electrical characteristics of a p + - n HgCdTe photodetector. Using solutions to the Poisson and Continuity equations we investigate low temperature behavior to determine optimum working conditions to enhance detectivity. Our model considers complete Fermi - Dirac statistics, major recombination mechanisms, band to band tunneling, trap assisted tunneling and impact ionization. Device performance was analyzed as a function of doping and temperature. Simulations show detectivity > 10 11 Jones at 77 K for Hg 0.78Cd 0.22Te.

Original languageEnglish (US)
Title of host publication2012 15th International Workshop on Computational Electronics, IWCE 2012
DOIs
StatePublished - Sep 27 2012
Event2012 15th International Workshop on Computational Electronics, IWCE 2012 - Madison, WI, United States
Duration: May 22 2012May 25 2012

Publication series

Name2012 15th International Workshop on Computational Electronics, IWCE 2012

Other

Other2012 15th International Workshop on Computational Electronics, IWCE 2012
CountryUnited States
CityMadison, WI
Period5/22/125/25/12

Keywords

  • II - VI Semiconductor materials
  • Infrared detectors
  • Tunneling

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Muralidharan, P., Vasileska, D., & Wijewarnasuriya, P. S. (2012). Modeling of HgCdTe photodetectors in the LWIR region. In 2012 15th International Workshop on Computational Electronics, IWCE 2012 [6242853] (2012 15th International Workshop on Computational Electronics, IWCE 2012). https://doi.org/10.1109/IWCE.2012.6242853