Abstract

We have developed a computer program that simulates the electrical characteristics of a p + - n HgCdTe photodetector. Using solutions to the Poisson and Continuity equations we investigate low temperature behavior to determine optimum working conditions to enhance detectivity. Our model considers complete Fermi - Dirac statistics, major recombination mechanisms, band to band tunneling, trap assisted tunneling and impact ionization. Device performance was analyzed as a function of doping and temperature. Simulations show detectivity > 10 11 Jones at 77 K for Hg 0.78Cd 0.22Te.

Original languageEnglish (US)
Title of host publication2012 15th International Workshop on Computational Electronics, IWCE 2012
DOIs
StatePublished - Sep 27 2012
Event2012 15th International Workshop on Computational Electronics, IWCE 2012 - Madison, WI, United States
Duration: May 22 2012May 25 2012

Publication series

Name2012 15th International Workshop on Computational Electronics, IWCE 2012

Other

Other2012 15th International Workshop on Computational Electronics, IWCE 2012
Country/TerritoryUnited States
CityMadison, WI
Period5/22/125/25/12

Keywords

  • II - VI Semiconductor materials
  • Infrared detectors
  • Tunneling

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering

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