Modeling of FinFET: 3D MC simulation using FMM and unintentional doping effects on device operation

Hasanur R. Khan; Dragica Vasileska; S. S. Ahmed; Christian Ringhofer; Clemens Heitzinger

doi:10.1007/s10825-004-7072-7

Modeling of FinFET: 3D MC simulation using FMM and unintentional doping effects on device operation

Hasanur R. Khan, Dragica Vasileska, S. S. Ahmed, Christian Ringhofer, Clemens Heitzinger

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Novel device concepts such as dual gate SOI, Ultra thin body SOI, FinFETs, etc., have emerged as a solution to the ultimate scaling limits of conventional bulk MOSFETs. These novel devices suppress some of the Short Channel Effects (SCE) efficiently, but at the same time more physics based modeling is required to investigate device operation. In this paper, we use semi-classical 3D Monte Carlo device simulator to investigate important issues in the operation of FinFETs. Fast Multipole Method (FMM) has been integrated with the EMC scheme to replace the time consuming Poisson equation solver. Effect of unintentional doping for different device dimensions has been investigated. Impurities at the source side of the channel have most significant impact on the device performance.

Original language	English (US)
Pages (from-to)	337-340
Number of pages	4
Journal	Journal of Computational Electronics
Volume	3
Issue number	3-4
DOIs	https://doi.org/10.1007/s10825-004-7072-7
State	Published - Oct 2004

Keywords

3D Monte Carlo
FMM
FinFET
Unintentional doping

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Modeling and Simulation
Electrical and Electronic Engineering

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10.1007/s10825-004-7072-7

Cite this

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AU - Ringhofer, Christian

AU - Heitzinger, Clemens

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Modeling of FinFET: 3D MC simulation using FMM and unintentional doping effects on device operation

Abstract

Keywords

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