Modeling of FinFET: 3D MC simulation using FMM and unintentional doping effects on device operation

Hasanur R. Khan, Dragica Vasileska, S. S. Ahmed, Christian Ringhofer, Clemens Heitzinger

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

Novel device concepts such as dual gate SOI, Ultra thin body SOI, FinFETs, etc., have emerged as a solution to the ultimate scaling limits of conventional bulk MOSFETs. These novel devices suppress some of the Short Channel Effects (SCE) efficiently, but at the same time more physics based modeling is required to investigate device operation. In this paper, we use semi-classical 3D Monte Carlo device simulator to investigate important issues in the operation of FinFETs. Fast Multipole Method (FMM) has been integrated with the EMC scheme to replace the time consuming Poisson equation solver. Effect of unintentional doping for different device dimensions has been investigated. Impurities at the source side of the channel have most significant impact on the device performance.

Original languageEnglish (US)
Pages (from-to)337-340
Number of pages4
JournalJournal of Computational Electronics
Volume3
Issue number3-4
DOIs
StatePublished - Oct 1 2004

Keywords

  • 3D Monte Carlo
  • FMM
  • FinFET
  • Unintentional doping

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

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