Abstract
This paper seeks to quantify the electron diffusion length in p-type GaInAsN and to understand the performance of GaInAsN cells. The usual modeling is complicated because the electron diffusion length is quite short (often <0.1 μm) and is usually less than the hole diffusion length. The properties (e.g. absorption and transport) of GaInAsN are both variable and poorly studied, and, because the band gap of GaInAsN is less than the band gap of the substrate, light that is transmitted through the GaInAsN layer may be reflected from the back metallization and make a second pass through the GaInAsN. Layers that are expected to be p-type can sometimes change to n-type, changing the location of the junction and complicating the modeling, but improving the performance of the cell. Internal quantum efficiencies as high as 80% near the GaAs band edge are reported.
Original language | English (US) |
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Title of host publication | Conference Record of the IEEE Photovoltaic Specialists Conference |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 1210-1213 |
Number of pages | 4 |
Volume | 2000-January |
ISBN (Print) | 0780357728 |
DOIs | |
State | Published - 2000 |
Externally published | Yes |
Event | 28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States Duration: Sep 15 2000 → Sep 22 2000 |
Other
Other | 28th IEEE Photovoltaic Specialists Conference, PVSC 2000 |
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Country/Territory | United States |
City | Anchorage |
Period | 9/15/00 → 9/22/00 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Control and Systems Engineering
- Industrial and Manufacturing Engineering