Modeling of electron diffusion length in GaInAsN solar cells

Sarah Kurtz; J. F. Geisz; D. J. Friedman; J. M. Olson; A. Duda; N. H. Karam; Richard King; J. H. Ermer; D. E. Joslin

doi:10.1109/PVSC.2000.916106

Modeling of electron diffusion length in GaInAsN solar cells

Sarah Kurtz, J. F. Geisz, D. J. Friedman, J. M. Olson, A. Duda, N. H. Karam, Richard King, J. H. Ermer, D. E. Joslin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

34 Scopus citations

Abstract

This paper seeks to quantify the electron diffusion length in p-type GaInAsN and to understand the performance of GaInAsN cells. The usual modeling is complicated because the electron diffusion length is quite short (often <0.1 μm) and is usually less than the hole diffusion length. The properties (e.g. absorption and transport) of GaInAsN are both variable and poorly studied, and, because the band gap of GaInAsN is less than the band gap of the substrate, light that is transmitted through the GaInAsN layer may be reflected from the back metallization and make a second pass through the GaInAsN. Layers that are expected to be p-type can sometimes change to n-type, changing the location of the junction and complicating the modeling, but improving the performance of the cell. Internal quantum efficiencies as high as 80% near the GaAs band edge are reported.

Original language	English (US)
Title of host publication	Conference Record of the IEEE Photovoltaic Specialists Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1210-1213
Number of pages	4
Volume	2000-January
ISBN (Print)	0780357728
DOIs	https://doi.org/10.1109/PVSC.2000.916106
State	Published - 2000
Externally published	Yes
Event	28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States Duration: Sep 15 2000 → Sep 22 2000

Other

Other	28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Country	United States
City	Anchorage
Period	9/15/00 → 9/22/00

ASJC Scopus subject areas

Electrical and Electronic Engineering
Control and Systems Engineering
Industrial and Manufacturing Engineering

Access to Document

10.1109/PVSC.2000.916106

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Kurtz, S., Geisz, J. F., Friedman, D. J., Olson, J. M., Duda, A., Karam, N. H., King, R., Ermer, J. H., & Joslin, D. E. (2000). Modeling of electron diffusion length in GaInAsN solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference (Vol. 2000-January, pp. 1210-1213). [916106] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2000.916106

Modeling of electron diffusion length in GaInAsN solar cells. / Kurtz, Sarah; Geisz, J. F.; Friedman, D. J.; Olson, J. M.; Duda, A.; Karam, N. H.; King, Richard; Ermer, J. H.; Joslin, D. E.

Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2000-January Institute of Electrical and Electronics Engineers Inc., 2000. p. 1210-1213 916106.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kurtz, S, Geisz, JF, Friedman, DJ, Olson, JM, Duda, A, Karam, NH, King, R, Ermer, JH & Joslin, DE 2000, Modeling of electron diffusion length in GaInAsN solar cells. in Conference Record of the IEEE Photovoltaic Specialists Conference. vol. 2000-January, 916106, Institute of Electrical and Electronics Engineers Inc., pp. 1210-1213, 28th IEEE Photovoltaic Specialists Conference, PVSC 2000, Anchorage, United States, 9/15/00. https://doi.org/10.1109/PVSC.2000.916106

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abstract = "This paper seeks to quantify the electron diffusion length in p-type GaInAsN and to understand the performance of GaInAsN cells. The usual modeling is complicated because the electron diffusion length is quite short (often <0.1 μm) and is usually less than the hole diffusion length. The properties (e.g. absorption and transport) of GaInAsN are both variable and poorly studied, and, because the band gap of GaInAsN is less than the band gap of the substrate, light that is transmitted through the GaInAsN layer may be reflected from the back metallization and make a second pass through the GaInAsN. Layers that are expected to be p-type can sometimes change to n-type, changing the location of the junction and complicating the modeling, but improving the performance of the cell. Internal quantum efficiencies as high as 80% near the GaAs band edge are reported.",

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