Modeling of deep-submicrometer MOSFETs: Random impurity effects, threshold voltage shifts and gate capacitance attenuation

Dragica Vasileska, William J. Gross, David K. Ferry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

46 Scopus citations

Fingerprint

Dive into the research topics of 'Modeling of deep-submicrometer MOSFETs: Random impurity effects, threshold voltage shifts and gate capacitance attenuation'. Together they form a unique fingerprint.

Mathematics

Physics & Astronomy

Engineering & Materials Science

Chemical Compounds